The results of the detailed study of the accumulation and/or annealing of vacancy–oxygen (VO) complexes kinetics in the Czochralski‐grown n‐type silicon (Cz n‐Si) are presented. The samples are irradiated by electron beam pulses of different energies and intensities (J) at VO effective annealing temperatures (>300 °C). It is shown that: 1) upon high‐temperature (so‐called “hot”) irradiation Cz n‐Si at temperatures >300 °C, J can significantly stimulate VO annealing and a maximum concentration of accumulated VO defects ([VO]max, when the rates of formation and simultaneous annealing of VO complexes are equal) increases with increasing J and decreases with increasing irradiation temperature. Accelerated annealing of VO slows down sharply the growth rate of [VO]max as a function of J; 2) the VO defects introduced into Cz n‐Si at room temperature can also be annealed faster if the annealing is accompanied by additional electron irradiation of a certain intensity. It has been established that the radiation‐accelerated annealing of VO is characterized by a decrease in the activation energy from ≈1.7 to ≈0.5 eV due to radiation ionization of the Si crystal. A model of the enhanced VO annealing process is proposed.
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