Angle-resolved Photoemission Spectroscopy Research Articles

Atomically Thin Two-Dimensional Kagome Flat Band on the Silicon Surface.

In condensed matter physics, the Kagome lattice and its inherent flat bands have attracted considerable attention for their prediction and observation to host a variety of exotic physical phenomena. Despite extensive efforts to fabricate thin films of Kagome materials aimed at modulating flat bands through electrostatic gating or strain manipulation, progress has been limited. Here, we report the observation of a d-orbital hybridized Kagome-derived flat band in Ag/Si(111) as revealed by angle-resolved photoemission spectroscopy. Our findings indicate that silver atoms on a silicon substrate form an unconventional distorted breathing Kagome structure, where a delicate balance in the hopping parameters of the in-plane d-orbitals leads to destructive interference, resulting in double flat bands. The exact quantum destructive interference mechanism that forms the flat band is uncovered in a rigorous manner that has not been described before. These results illuminate the potential for integrating metal-semiconductor interfaces on semiconductor surfaces into Kagome physics, particularly in exploring the flat bands of ideal 2D Kagome systems.

Amorphous Carbon Nitride Films: Surface and Subsurface Composition and Bonding.

To obtain quantitative information about the composition and bonding of atoms located at and beyond the analyzed solid surface nondestructively, we applied angle-resolved X-ray photoelectron spectroscopy aided by the maximum entropy method to air-exposed amorphous carbon nitride films deposited by pulsed laser deposition of diamond-like carbon modified by low-energy nitrogen ion bombardment during film growth. We demonstrate that the composition, chemical bonding, and mass density vary significantly from the top surface to a shallow subsurface region. The analyzed samples, in a shallow surface region of ∼1 nm, are composed of oxygen, nitrogen, hydrogen, and mostly carbon in sp2 hybridization. In a deeper region, the C sp3 content increases substantially going to a maximum, whereas the nitrogen percentage decreases to a minimum, then increases, and tends to saturate. Special attention has been paid to in-depth distributions of carbon atoms in trigonal and tetragonal arrangements because they specify numerous physical and chemical properties of carbon-based materials. These results indicate that the interaction of DLC:N surfaces with surroundings can be influenced, barring oxygen and nitrogen, by sp2-bonded carbon atoms located near the surface of the samples. The obtained results can be useful for developing a deeper understanding of the interaction between DLC:N layer surfaces and their surroundings and particularly with living tissue.

Probing the Shape of the Weyl Fermi Surface of NbP Using Transverse Electron Focusing

Weyl semimetals are defined by their unique Fermi surface, comprising pairs of Weyl points of opposite chirality, connected through topological surface states. Angle-resolved photoemission spectroscopy (ARPES) has been used to verify the existence of the Weyl points and the Fermi arcs. However, ARPES is limited in resolution, leading to significant uncertainty when characterizing the shape of the Fermi surface of semimetals and measuring features such as the distance between the Weyl points. Here, to surpass the resolution of ARPES, we combine quantum oscillation measurements with transverse electron focusing experiments. These techniques offer complementary information, enabling the reconstruction of the distinctive peanut-shaped cross section of the Weyl Fermi surface and accurately determining the separation between Weyl points in the Weyl semimetal NbP. Our Letter showcases the integration of quantum oscillations and transverse electron focusing, allowing for the measurements of complex Fermi surface geometries, concurrently with carriers’ transport properties, in high-mobility quantum materials. Published by the American Physical Society 2024

Quantum-Confined Lifshitz Transition on Weyl Semimetal Td-MoTe2.

Adsorption of alkali atoms onto material surfaces is widely utilized for controlling electronic properties and is particularly effective for two-dimensional materials. While tuning the chemical potential and band gap and creating quantum-confined states are well established for alkali adsorption on semiconductors, the effects on semimetallic systems remain largely elusive. Here, utilizing angle-resolved photoemission spectroscopy measurements and density functional theory calculations, we disclose the creation of two-dimensional electron gas and the quantum-confined Lifshitz transition at the surface of a Weyl semimetal Td-MoTe2 by potassium adsorption. Electrons from potassium adatoms are shown to be transferred mainly to the lowest unoccupied band within the gapped part of the Brillouin zone, which, in turn, induces strong surface band bending and quantum confinement in the topmost layer. The quantum-confined topmost layer evolves from a semimetal to a strong metal with a Lifshitz transition departing substantially from the bulk band. The present finding and its underlying mechanism can be exploited for the creation of electronic heterojunctions in van der Waals semimetals.

(Invited) High-Density, Flip-Chip Alkali Doping of Graphene and Observation of the Lifshitz Transition

The physical properties of 2D materials can be tuned by doping to extreme charge carrier density, enabling the investigation of phenomena such as superconductivity, charge density waves, band inversion and Lifshitz transitions. For example, it is variably estimated that an electron density of 3.7 − 5.1 × 1014 cm−2 is required in order to induce a Lifshitz transition in monolayer graphene [1,2]. At this charge density, the Fermi surface passes through the hyperbolic saddle point of graphene at the M-pointin the Brillouin zone, where the Fermi surface geometry changes and the density of states diverges at a van Hove singularity. Achieving charge density sufficient to reach the Lifshitz transition has been limited to chemical doping in ultra-high vacuum (UHV) conditions and observation by angle resolved photoemission spectroscopy (ARPES). Integrating experimental methods for charge transport measurements with UHV chemical doping conditions is typically difficult. Field-effect methods including dielectric gating and ionic liquid gating are readily integrated with charge transport measurements, but achieve lower charge carrier density than UHV chemical doping methods.We report here an integrated flip-chip method to dope graphene by alkali vapour in the diffusive regime, suitable for charge transport measurements at ultra-high charge carrier density. We introduce a liquid cesium droplet source into a sealed cavity filled with inert gas (argon) to dope a monolayer graphene Hall bar on a quartz substrate by the process of cesium atom diffusion, adsorption and ionization at the graphene surface (Fig. a). Doping can be monitored by operando ac Hall measurement of longitudinal Rxx and transverse Rxy resistance of graphene (Fig. b). An optical image of a representative graphene Hall bar is shown in Fig. c (scale bar = 100 μm). The measured time dependent Rxx and Rxy during Cs exposure can be used to determine the time dependent electron density n and electron mobility μ.Upon sealing, the flip-chip assembly containing doped graphene is stable in ambient conditions, enabling sample characterization by various means, including non-resonant Raman scattering measurement through the transparent quartz window. Charge transport versus temperature and magnetic field in a variable temperature insert was performed, including Hall measurements to B = 7 T (Fig. d). By these methods, we confirm that flip-chip doping with Cs can be used to achieve charge density exceeding 4 × 1014 cm−2 . The Lifshitz transition is observed via the inversion of cyclotron effective mass, corresponding to sign inversion of the Hall coefficient RH (Fig. d). Employing a third-nearest-neighbour tight binding (3NNTB) calculation, we estimate the Fermi energies and Fermi surfaces corresponding to the charge densities observed by high field magnetotransport (Fig. e). At the Lifshitz transition, the Fermi surface transforms abruptly from that of electron pockets around the K and K' points, to a hole pocket around Γ. Further experimental observations will be discussed.In summary, our findings show that chemical doping, hitherto restricted to ultra-high vacuum conditions, can be applied in a diffusive regime at ambient pressure in an inert gas environment. We anticipate that our flip-chip doping method can be applied to a variety of 2D materials and dopant speciies beyond monolayer graphene and Cs.[1] P. Rosenzweig et al., "Overdoping graphene beyond the van Hove singularity", Physical Review Letters 125, 176403 (2020).[2] A. Zaarour et al., "Flat band and Lifshitz transition in long-range-ordered supergraphene obtained by Erbium intercalation. Physical Review Research 5, 013099 (2023). Figure 1

Quantum-Confined Tunable Ferromagnetism on the Surface of a Van der Waals Antiferromagnet NaCrTe2.

The surface of three-dimensional materials provides an ideal and versatile platform to explore quantum-confined physics. Here, we systematically investigate the electronic structure of Na-intercalated CrTe2, a van der Waals antiferromagnet, using angle-resolved photoemission spectroscopy and ab initio calculations. The measured band structure deviates from the calculation of bulk NaCrTe2 but agrees with that of ferromagnetic monolayer CrTe2. Consistently, we observe unexpected exchange splitting of the band dispersions, persisting well above the Néel temperature of bulk NaCrTe2. We argue that NaCrTe2 features a quantum-confined 2D ferromagnetic state in the topmost surface layer due to strong ferromagnetic correlation in the CrTe2 layer. Moreover, the exchange splitting and the critical temperature can be controlled by surface doping of alkali-metal atoms, suggesting the feasibility of tuning the surface ferromagnetism. Our work not only presents a simple platform for exploring tunable 2D ferromagnetism but also provides important insights into the quantum-confined low-dimensional magnetic states.

Evidence for Two-Dimensional Weyl Fermions in Air-Stable Monolayer PtTe1.75.

The Weyl semimetals represent a distinct category of topological materials wherein the low-energy excitations appear as the long-sought Weyl Fermions. Exotic transport and optical properties are expected because of the chiral anomaly and linear energy-momentum dispersion. While three-dimensional Weyl semimetals have been successfully realized, the quest for their two-dimensional (2D) counterparts is ongoing. Here, we report the realization of 2D Weyl Fermions in monolayer PtTe1.75, which has strong spin-orbit coupling and lacks inversion symmetry, by combined angle-resolved photoemission spectroscopy, scanning tunneling microscopy, second harmonic generation, X-ray photoelectron spectroscopy measurements, and first-principles calculations. The giant Rashba splitting and band inversion lead to the emergence of three pairs of critical Weyl cones. Moreover, monolayer PtTe1.75 exhibits excellent chemical stability in ambient conditions, which is critical for future device applications. The discovery of 2D Weyl Fermions in monolayer PtTe1.75 opens up new possibilities for designing and fabricating novel spintronic devices.

Time-resolved ARPES with probe energy of 6.0 eV and tunable MIR pump at 250 kHz

In this paper, we present a laser source designed specifically for time- and angle-resolved photoemission spectroscopy (TR-ARPES) investigations of light-induced electron dynamics in quantum materials. Our laser source is based on a ytterbium-doped laser that seeds an optical parametric amplifier (OPA) followed by a difference frequency generation (DFG) stage. This configuration enables the generation of tunable near-infrared and mid-infrared laser pulses (1.5 to 8 μm - 0.82 to 0.15 eV) at 250 kHz of repetition rate, serving as the pump for TR-ARPES measurements. The remaining energy of the laser is used to generate the ultraviolet 6 eV probe pulses, which prompt the material to emit photoelectrons. We demonstrate the long-term stability of the source, as well as the characterization of the beam profiles and pulse durations. Additionally, we present preliminary TR-ARPES results obtained on Bi2Te3, a prototypical 3D topological insulator. This paper illustrates the capability of our laser source to probe electronic dynamics in quantum materials.

Magnetic splitting induced ferromagnetism in chromium-doped HfSe2

Two-dimensional (2D) magnetic layered materials have gained significant interest in spintronic for memory storage devices. Herein, the electronic and magnetic properties of high-quality single crystals of chromium (Cr)-doped hafnium diselenide were studied. The electronic study indicated that the Cr-doped HfSe2 reveals the semiconducting nature with a proper bandgap as identified by angle-resolved photoemission spectroscopy and first-principle density functional theory (DFT) calculations. The magnetic results indicate that the HfSe₂ exhibited ferromagnetic characteristics with the substitution of Cr atoms in a perpendicular direction. The Cr-doped HfSe2 sample shows a ferromagnetic phase below ∼58 K, indicating the critical temperature (Tc) of magnetic order, while above this temperature, it shows a paramagnetic phase that can follow the Curie-Weiss Law. It can be seen that the magnetic moment is approximately 0.16 emu/g at 5 K, which further decreases with increasing temperature until 60 K and then transforms to a paramagnetic phase. The sample can clearly show a weak out-of-plane magnetic anisotropy with a coercivity of around 50.56 Oe and a saturation magnetization value of 0.029 emu/g. Convincingly, it was observed from the ARPES results that the valence band is split due to the spin-orbit interaction of Cr atoms, which can induce ferromagnetic order. At the same time, the temperature-dependent ARPES data shows that the splitting is higher below the Tc, while it is weaker above the Tc. The DFT results revealed that near the Fermi level, the spin-up and spin-down are spin-polarized with asymmetric trends. It can be observed that substituting Cr on the octahedral sites of Hf atoms influences the electron spin order created by Hf vacancies (as validated by the magnetic coupling measured by electron paramagnetic resonance spectroscopy experiments), which can change the magnetic alignment to induce the magnetism in HfSe2. This study highlights that doping transition metal in HfSe2 has promising potential for future applications, especially in memory devices and spintronic technologies.

Doping dependence of spin-momentum locking in bismuth-based high-temperature cuprate superconductors

Non-zero spin orbit coupling has been reported in several unconventional superconductors due to the absence of inversion symmetry breaking. This contrasts with cuprate superconductors, where such interaction has been neglected for a long time. The recent report of a non-trivial spin orbit coupling in overdoped Bi2212 cuprate superconductor, has re-opened an old debate on both the source and role of such interaction and its evolution throughout the superconducting dome. Using high-resolution spin- and angle-resolved photoemission spectroscopy, we reveal a momentum-dependent spin texture throughout the hole-doped side of the superconducting phase diagram for single- and double-layer bismuth-based cuprates. The universality of the reported effect among different dopings and the disappearance of spin polarization upon lead substitution, suggest a common source. We argue that local structural fluctuations of the CuO planes and the resulting charge imbalance may cause local inversion symmetry breaking and spin polarization, which might be crucial for understanding cuprates physics.

Self-Stacked 1T-1H Layers in 6R-NbSeTe and the Emergence of Charge and Magnetic Correlations Due to Ligand Disorder.

The emergence of correlated phenomena arising from the combination of 1T and 1H van der Waals layers is the focus of intense research. Here, we synthesize a self-stacked 6R phase in NbSeTe, showing perfect alternating 1T and 1H layers that grow coherently along the c-direction, as revealed by scanning transmission electron microscopy. Angle-resolved photoemission spectroscopy shows a mixed contribution of the trigonal and octahedral Nb bands to the Fermi level. Diffuse scattering reveals temperature-independent short-range charge fluctuations with propagation vector qCO = (0.25 0), derived from the condensation of a longitudinal mode in the 1T layer, while the long-range charge density wave is quenched by ligand disorder. Magnetization measurements suggest the presence of an inhomogeneous, short-range magnetic order, further supported by the absence of a clear phase transition in the specific heat. These experimental analyses in combination with ab initio calculations indicate that the ground state of 6R-NbSeTe is described by a statistical distribution of short-range charge-modulated and spin-correlated regions driven by ligand disorder. Our results demonstrate how natural 1T-1H self-stacked bulk heterostructures can be used to engineer emergent phases of matter.

Dual Dirac Nodal Line in Nearly Freestanding Electronic Structure of β-Sn Monolayer.

Two-dimensional topological insulators (2D TIs) have distinct electronic properties that make them attractive for various applications, especially in spintronics. The conductive edge states in 2D TIs are protected from disorder and perturbations and are spin-polarized, which restrict current flow to a single spin orientation. In contrast, topological nodal line semimetals (TNLSM) are distinct from TIs because of the presence of a 1D ring of degeneracy formed from two bands that cross each other along a line in the Brillouin zone. These nodal lines are protected by topology and can be destroyed only by breaking certain symmetry conditions, making them highly resilient to disorder and defects. However, 2D TNLSMs do not possess protected boundary modes, which makes their investigation challenging. There have been several theoretical predictions of 2D TNLSMs, however, experimental realizations are rare. β-Sn, a metallic allotrope of tin with a superconducting temperature of 3.72 K, may be a candidate for a topological superconductor that can host Majorana Fermions for quantum computing. In this work, single layers of α-Sn and β-Sn on a Cu(111) substrate are successfully prepared and studied using scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density functional theory calculations. The lattice and electronic structure undergo a topological transition from 2D topological insulator α-Sn to 2D TNLSM β-Sn, with two types of nodal lines coexisting in monolayer β-Sn. Such a realization of two types of nodal lines in one 2D material has not been reported to date. Moreover, we also observed an unexpected phenomenon of freestanding-like electronic structures of β-Sn/Cu(111), highlighting the potential of ultrathin β-Sn films as a platform for exploring the electronic properties of 2D TNLSM and topological superconductors, such as few-layer superconducting β-Sn in lateral contact with topological nodal line single-layer β-Sn.

Evidence of electron interaction with an unidentified bosonic mode in superconductor CsCa2Fe4As4F2

The kink structure in band dispersion usually refers to a certain electron-boson interaction, which is crucial in understanding the pairing in unconventional superconductors. Here we report the evidence of the observation of a kink structure in Fe-based superconductor CsCa2Fe4As4F2 using angle-resolved photoemission spectroscopy. The kink shows an orbital selective and momentum dependent behavior, which is located at 15 meV below Fermi level along the Γ−M\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Gamma -{{\\rm{{M}}}}$$\\end{document} direction at the band with dxz orbital character and vanishes when approaching the Γ−X\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Gamma -{{\\rm{{X}}}}$$\\end{document} direction, correlated with a slight decrease of the superconducting gap. Most importantly, this kink structure disappears when the superconducting gap closes, indicating that the corresponding bosonic mode (~9±1\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$9\\pm 1$$\\end{document} meV) is closely related to superconductivity. However, the origin of this mode remains unidentified, since it cannot be related to phonons or the spin resonance mode (~15 meV) observed by inelastic neutron scattering. The behavior of this mode is rather unique and challenges our present understanding of the superconducting paring mechanism of the bilayer FeAs-based superconductors.

Direct observation of the electronic structure and many-body interactions of low-mobility carriers in perylene diimide derivative

Despite the rapid progresses in the field of organic semiconductors, aided by the development of high-mobility organic materials, their high carrier mobilities are often unipolar, being sufficiently high only for either electrons or holes. Yet, the basic mechanisms underlying such significant mobility asymmetry largely remains elusive. We perform angle-resolved photoelectron spectroscopy to reveal the occupied band structures and the many-body interactions for low-mobility hole carriers in a typical n-type semiconductor perylene diimide derivative. The band dispersion exhibits strong renormalization to the calculated non-interacting electronic structure. The analysis including many-body interactions elucidate that the significant mass enhancement can be understood in terms of strong charge–phonon coupling, leading to an important mechanism of polaron band transport of low intrinsic carrier mobility in organic semiconductors.

Optical properties and electronic structure of epitaxial uranium films

Uranium exhibits high chemical activity. The preparation of single crystalline uranium films via molecular beam epitaxy, followed by in situ characterization under ultrahigh vacuum condition, effectively avoids sample contamination caused by the environmental atmosphere. In this work, single crystalline uranium films were grown on the W(110) surface by a deflected electron beam evaporator. The optical constants of the W(110) substrate and the uranium films were obtained through in situ ultrahigh vacuum spectroscopic ellipsometry, while the electronic structure of uranium films was measured by angle-resolved photoemission spectroscopy (ARPES). Notably, the optical constants of uranium film differ from those previously reported measured by the ex situ experiments. The band structure and optical constants of the uranium film were calculated by the ab initio method, and theoretical calculations were compared with the experimental results. The calculated band structure of α-U is consistent with the bulk electronic structure of uranium films measured by ARPES, except for a surface-state-like feature. The parameters of the Drude oscillator derived from the ellipsometric fitting were used to revise the calculated optical constants, which obviously improves the accuracy of the calculations. Our study provides the most strictly fundamental data of the uranium up to now.

Evidence of strong and mode-selective electron–phonon coupling in the topological superconductor candidate 2M-WS2

The interaction between lattice vibrations and electrons plays a key role in various aspects of condensed matter physics — including electron hydrodynamics, strange metal behavior, and high-temperature superconductivity. In this study, we present systematic investigations using Raman scattering and angle-resolved photoemission spectroscopy (ARPES) to examine the phononic and electronic subsystems of the topological superconductor candidate 2M-WS2. Raman scattering exhibits an anomalous nonmonotonic temperature dependence of phonon linewidths, indicative of strong phonon–electron scattering over phonon–phonon scattering. The ARPES results demonstrate pronounced dispersion anomalies (kinks) at multiple binding energies within both bulk and topological surface states, indicating a robust and mode-selective coupling between the electronic states and various phonon modes. These experimental findings align with previous calculations of the Eliashberg function, providing a deeper understanding of the highest superconducting transition temperature observed in 2M-WS2 (8.8 K) among all transition metal dichalcogenides as induced by electron–phonon coupling. Furthermore, our results may offer valuable insights into other properties of 2M-WS2 and guide the search for high-temperature topological superconductors.

Realization of Honeycomb Tellurene with Topological Edge States.

The two-dimensional (2D) honeycomb lattice has attracted intensive research interest due to the appearance of Dirac-type band structures as the consequence of two sublattices in the honeycomb structure. Introducing strong spin-orbit coupling (SOC) leads to a gap opening at the Dirac point, transforming the honeycomb lattice into a 2D topological insulator as a platform for the quantum spin Hall effect (QSHE). In this work, we realize a 2D honeycomb-structured film with tellurium, the heaviest nonradioactive element in Group VI, namely, tellurene, via molecular beam epitaxy. We revealed the gap opening of 160 meV at the Dirac point due to the strong SOC in the honeycomb-structured tellurene by angle-resolved photoemission spectroscopy. The topological edge states of tellurene are detected via scanning tunneling microscopy/spectroscopy. These results demonstrate that tellurene is a novel 2D honeycomb lattice with strong SOC, and they unambiguously prove that tellurene is a promising candidate for a room-temperature QSHE system.

Hole-Carrier-Dominant Transport in 2D Single-Crystal Copper.

In 2D noble metals like copper, the carrier scattering at grain boundaries has obscured the intrinsic nature of electronic transport. However, it is demonstrated that the intrinsic nature of transport by hole carriers in 2D copper can be revealed by growing thin films without grain boundaries. As even a slight deviation from the twin boundary is perceived as grain boundaries by electrons, it is only through the thorough elimination of grain boundaries that the hidden hole-like attribute of 2D single-crystal copper can be unmasked. Two types of Fermi surfaces, a large hexagonal Fermi surface centered at the zone center and the triangular Fermi surface around the zone corner, tightly matching to the calculated Fermi surface topology, confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements and vivid nonlinear Hall effects of the 2D single-crystal copper account for the presence of hole carriers experimentally. This breakthrough suggests the potential to manipulate the majority carrier polarity in metals by means of grain boundary engineering in a 2D geometry.

Realization of Two-dimensional Intrinsic Polar metal in a Buckled Honeycomb Binary Lattice.

Structural topology and symmetry of a two-dimensional (2D) network play pivotal roles in defining its electrical properties and functionalities. Here, a binary buckled honeycomb lattice with C3v symmetry, which naturally hosts topological Dirac fermions and out-of-plane polarity, is proposed. It is successfully achieved in a group IV-V compound, namely monolayer SiP epitaxially grown on Ag(111) surface. Combining first-principles calculations with angle-resolved photoemission spectroscopy, the degeneration of the Dirac nodal lines to points due to the broken horizonal mirror symmetry is elucidated. More interesting, the SiP monolayer manifests metallic nature, which is mutually exclusive with polarity in conventional materials. It is further found that the out-of-plane polarity is strongly suppressed by the metallic substrate. This study not only represents a breakthrough of realizing intrinsic polarity in 2D metallic material via ingenious design but also provides a comprehensive understanding of the intricate interplay of many exotic low-dimensional quantum phenomena.

Realization of a two-dimensional Weyl semimetal and topological Fermi strings

A two-dimensional (2D) Weyl semimetal, akin to a spinful variant of graphene, represents a topological matter characterized by Weyl fermion-like quasiparticles in low dimensions. The spinful linear band structure in two dimensions gives rise to distinctive topological properties, accompanied by the emergence of Fermi string edge states. We report the experimental realization of a 2D Weyl semimetal, bismuthene monolayer grown on SnS(Se) substrates. Using spin and angle-resolved photoemission and scanning tunneling spectroscopies, we directly observe spin-polarized Weyl cones, Weyl nodes, and Fermi strings, providing consistent evidence of their inherent topological characteristics. Our work opens the door for the experimental study of Weyl fermions in low-dimensional materials.