Angle-resolved Photoemission Spectroscopy Research Articles

Temperature Induced, Reversible Switching of Ferro-Rotational Order Coupled to Superlattice Commensuralibity.

High-quality 1T-TaS2 crystals are investigated by angle-resolved photoelectron spectroscopy, Raman spectroscopy, and low-energy electron diffraction. The Ferro-Rotational Order (FRO) of the charge density wave switches configuration at the transition between the commensurate and the nearly commensurate phase. This process requires samples without built-in or externally induced strain. Moreover, temperature gradients generated by a focused laser beam can be employed in order to freeze the in-plane chirality. Based on such observations, we propose a protocol to obtain durable and nonvolatile state switching of the FRO configuration in bulk 1T-TaS2 crystals.

Novel Quantum States of Exciton-Floquet Composites: Electron-Hole Entanglement and Information.

Coulomb exchange between distinct electron-hole modes, i.e., exciton and Floquet states, in two-dimensional semiconductors is explored. Coherent ultrafast mixing of the exciton and Floquet states under weak optical pumping is investigated through a theoretical description of time-resolved and angle-resolved photoemission spectroscopy (tr-ARPES) in an extended Haldane model that includes the electron-hole Coulomb interaction. Two branches of novel quantum states are found in the form of bosonic exciton-Floquet composites, which result from exchange coupling due to the Coulomb interaction. Furthermore, tr-ARPES could be directly employed for the density matrix element of the biparticle subsystem of photoelectron and hole, and electron-hole entanglement and information could be further explored. This finding suggests a unique platform to study the buildup and dephasing of novel exciton-Floquet composites and to resolve the information carried by them, which would enable the pursuit of new reconfigurable devices based on two-dimensional semiconductors.

Ferroelectric Semimetals with α-Bi/SnSe van der Waals Heterostructures and Their Topological Currents.

We show that proximity effects can be utilized to engineer van der Waals heterostructures (vdWHs) displaying semimetallic spin-ferroelectricity locking, where ferroelectricity and semimetallic spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations involving α-Bi/SnSe bilayers. We show that such systems support ferroelectrically switchable nonlinear anomalous Hall effect originating from large Berry curvature dipoles as well as direct and inverse spin Hall effects with giant bulk spin-charge interconversion efficiencies. The giant efficiencies are consequences of the proximity-induced semimetallic nature of low energy electron states, which are shown to behave as two-dimensional pseudo-Weyl fermions by means of symmetry analysis and first principles calculations as well as direct angle-resolved photoemission spectroscopy measurements.

Mixed equilibrium/nonequilibrium effects govern surface mobility in polymer glasses

Using angle-resolved X-ray photoelectron spectroscopy, sum-frequency generation vibrational spectroscopy, contact angle measurements, and molecular dynamics simulations, we verify that the glass transition temperature (Tg) of polymer glass is lower near the free surface. However, the experimental Tg-gradients showed a linear variation with depth (z) from the free surface, while the simulated equilibrium Tg-gradients exhibited a double exponential z-dependence. In typical simulations, Tg is determined based on the relaxation time of the system reaching a prescribed threshold value at equilibrium. Conversely, the experiments determined Tg by observing the unfreezing of molecular mobility during heating from a kinetically arrested, nonequilibrium glassy state. To investigate the impact of nonequilibrium effects on the Tg-gradient, we reduced the thermal annealing time in simulations, allowing the system to fall out of equilibrium. We observe a decrease in the relaxation time and the emergence of a modified z-dependence consistent with a linear Tg-gradient near the free surface. We further validate the impact of nonequilibrium effects by studying the dependence of the Tg on the heating/cooling rate for polymer films of varying thickness (h). Our experimental results reveal significant variations in the Tg-heating/cooling rate dependence with h below the bulk Tg, which are also observed in simulation when the simulated system is not equilibrated. We explain our findings by the reduction in mass density within the inner region of the system under nonequilibrium conditions, as observed in simulation, and recent research indicating a decrease in the local Tg of a polymer when placed next to a softer material.

Charge density waves and the effects of uniaxial strain on the electronic structure of 2H-NbSe2

Interplay of superconductivity and density wave orders has been at the forefront of research of correlated electronic phases for a long time. 2H-NbSe2 is considered to be a prototype system for studying this interplay, where the balance between the two orders was proven to be sensitive to band filling and pressure. However, the origin of charge density wave in this material is still unresolved. Here, by using angle-resolved photoemission spectroscopy, we revisit the charge density wave order and study the effects of uniaxial strain on the electronic structure of 2H-NbSe2. Our results indicate previously undetected signatures of charge density waves on the Fermi surface. The application of small amount of uniaxial strain induces substantial changes in the electronic structure and lowers its symmetry. This, and the altered lattice should affect both the charge density wave phase and superconductivity and should be observable in the macroscopic properties.

Growth and electronic structure of the nodal line semimetal in monolayer Cu2Si on Cu(111)

Cu2Si, a single-layer two-dimensional material with a honeycomb structure, has been proposed to have Dirac nodal line fermions. In this study, the synchrotron radiation X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and angle-resolved photoemission spectroscopy (SR-XPS, SR-UPS, and SR-ARPES) techniques were used to investigate the dynamic process of in situ deposition of single-layer Cu2Si on a Cu(111) crystal surface via molecular beam epitaxy (MBE). Cu2Si existed as a monolayer (ML) alloy, and there were competing mechanisms of distinct chemical states of silicon in different growth periods, according to a detailed examination of the experimental SR-XPS and SR-UPS spectra. Additionally, a weak interaction between the Cu2Si ML and Cu(111) was demonstrated via SR-ARPES and first-principles computations. The unique electronic structure of the Cu2Si ML was not destroyed by either this weak interaction or the disordered silicon produced on the surface during the growth process. The study of the Cu2Si growth kinetics provides a guarantee and a basis for the future exploration of the exotic properties of Cu2Si.

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing.

2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well-controlled, tunable, and scalable. Here, these challenges are addressed by a new approach, which combines molecular beam epitaxy and in situ band engineering in ultra-high vacuum of semiconducting gallium selenide (GaSe) on graphene. In situ studies by electron diffraction, scanning probe microscopy, and angle-resolved photoelectron spectroscopy reveal that atomically-thin layers of GaSe align in the layer plane with the underlying lattice of graphene. The GaSe/graphene heterostructure, referred to as 2semgraphene, features a centrosymmetric (group symmetry D3d) polymorph of GaSe, a charge dipole at the GaSe/graphene interface, and a band structure tunable by the layer thickness. The newly-developed, scalable 2semgraphene is used in optical sensors that exploit the photoactive GaSe layer and the built-in potential at its interface with the graphene channel. This proof of concept has the potential for further advances and device architectures that exploit 2semgraphene as a functional building block.

Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe3GeTe2

Two-dimensional (2D) van der Waals (vdW) magnets have sparked widespread attention due to their potential in spintronic applications as well as in fundamental physics. Ferromagnetic vdW compound Fe3GeTe2 (FGT) and its Ga variants have garnered significant interest due to their itinerant magnetism, correlated states, and high magnetic transition temperature. Experimental studies have demonstrated the tunability of FGT’s Curie temperature, TC, through adjustments in quintuple layer numbers (QL) and carrier concentrations, n. However, the underlying mechanism remains elusive. In this study, we employ molecular beam epitaxy (MBE) to synthesize 2D FGT films down to 1 QL with precise layer control, facilitating an exploration of the band structure and the evolution of itinerant carrier density. Angle-resolved photoemission spectroscopy (ARPES) reveals significant band structure changes at the ultra-thin limit, while first-principles calculations elucidate the band evolution from 1 QL to bulk, largely governed by interlayer coupling. Additionally, we find that n is intrinsically linked to the number of QL and temperature, with a critical value triggering the magnetic phase transition. Our findings underscore the pivotal role of band structure and itinerant electrons in governing magnetic phase transitions in such 2D vdW magnetic materials.

Electronic structure investigation and anisotropic phonon anharmonicity in ternary ZrGeTe4 single crystals

Ternary two-dimensional (2D) transition metal chalcogenides have gained immense attention because of their ability to overcome the intrinsic limitations of their binary counterparts. Layered 2D materials are important for future electronic and photonic devices owing to their low structural symmetry and in-plane anisotropy with tunable bandgap. Herein, the electronic structure and detailed vibrational properties of bulk ZrGeTe4 layered single crystals were investigated using angle-resolved photoemission spectroscopy (ARPES) and Raman scattering (RS). The ARPES results revealed an anisotropic Fermi surface of different momentum along kx and ky from the zone center and an anisotropic band structure with varying band curvatures along the high-symmetry directions. Furthermore, the RS of ZrGeTe4 was investigated under different polarizations and varying temperatures. The polarized RS exhibited twofold and fourfold symmetry orientations in different configurations, revealing the anisotropic phonon dispersions for bulk ZrGeTe4. The observed softening of Raman modes was corroborated with the anharmonic phonon dispersion, which was further supported by our third-order force constant calculations of thermal transport using density functional theory. Low lattice thermal conductivity with increasing temperature is linked with enhanced phonon–phonon scattering, which is evident from the decreased phonon lifetime and peak linewidth. In addition to these fundamental aspects, the anisotropic nature and unique layered structure of such materials reveal their bright future for next-generation nanoelectronic applications.

Controllable orbital angular momentum monopoles in chiral topological semimetals

AbstractThe emerging field of orbitronics aims to generate and control orbital angular momentum for information processing. Chiral crystals are promising orbitronic materials because they have been predicted to host monopole-like orbital textures, where the orbital angular momentum aligns isotropically with the electron’s crystal momentum. However, such monopoles have not yet been directly observed in chiral crystals. Here, we use circular dichroism in angle-resolved photoelectron spectroscopy to image orbital angular momentum monopoles in the chiral topological semimetals PtGa and PdGa. The spectra show a robust polar texture that rotates around the monopole as a function of photon energy. This is a direct consequence of the underlying magnetic orbital texture and can be understood from the interference of local atomic contributions. Moreover, we also demonstrate that the polarity of the monopoles can be controlled through the structural handedness of the host crystal by imaging orbital angular moment monopoles and antimonopoles in the two enantiomers of PdGa, respectively. Our results highlight the potential of chiral crystals for orbitronic device applications, and our methodology could enable the discovery of even more complicated nodal orbital angular momentum textures that could be exploited for orbitronics.

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

Abstract Stacking two semiconducting transition metal dichalcogenide (MX2) monolayers to form a heterobilayer creates a new variety of semiconductor junction with unique optoelectronic features, such as hosting long-lived dipolar interlayer excitons. Despite many optical, transport, and theoretical studies, there have been few direct electronic structure measurements of these junctions. Here, we apply angle-resolved photoemission spectroscopy with micron-scale spatial resolution (µARPES) to determine the band alignments in MoSe2/WSe2 heterobilayers, using in-situ electrostatic gating to electron-dope and thus probe the conduction band edges. By comparing spectra from heterobilayers with opposite stacking orders, that is, with either MoSe2 or WSe2 on top, we confirm that the band alignment is type II, with the valence band maximum in the WSe2 and the conduction band minimum in the MoSe2. The overall band gap is EG = 1.43 ± 0.03 eV, and to within experimental uncertainty it is unaffected by electron doping. However, the offset between the WSe2 and MoSe2 valence bands clearly decreases with increasing electron doping, implying band renormalisation only in the MoSe2, the layer in which the electrons accumulate. In contrast, µARPES spectra from a WS2/MoSe2 heterobilayer indicate type I band alignment, with both band edges in the MoSe2. These insights into the doping-dependent band alignments and gaps of MX2 heterobilayers will be useful for properly understanding and ultimately utilizing their optoelectronic properties.

Epitaxial Growth of Large-Scale α-Phase Antimonene.

Two-dimensional materials composed of elements from the 15th group of the periodic table remain largely unexplored. The primary challenge in advancing this research is the lack of large-scale layers that would facilitate extensive studies using laterally averaging techniques and enable functionalization for the fabrication of novel electronic, optoelectronic, and spintronic devices. In this report, we present a method for synthesizing large-scale antimonene layers, on the order of cm2. By employing molecular beam epitaxy, we successfully grow a monolayer film of α-phase antimonene on a W(110) surface passivated with a single-atom-thick layer of Sb atoms. The formation of α phase antimonene is confirmed through scanning tunneling microscopy and low-energy electron diffraction measurements. The isolated nature of the α-phase is further evidenced in the electronic structure, with linearly dispersed bands observed through angle-resolved photoelectron spectroscopy and supported by ab initio calculations.

Efficiency improvement of spin-resolved ARPES experiments using Gaussian process regression

The experimental efficiency has been a central concern for time-consuming experiments. Spin- and angle-resolved photoemission spectroscopy (spin-resolved ARPES) is renowned for its inefficiency in spin-detection, despite its outstanding capability to directly determine the spin-polarized electronic properties of materials. Here, we investigate the potential enhancement of the efficiency of spin-resolved ARPES experiments through the integration of measurement informatics. We focus on a representative topological insulator Bi2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {Bi}_{2}$$\\end{document}Te3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {Te}_{3}$$\\end{document}, which has well-understood spin-polarized electronic states. We employ Gaussian process regression (GPR) to assess the accumulation of spin polarization information using an indicator known as the GPR score. Our analyses based on the GPR model suggest that the GPR score can serve as a stopping criterion for spin-resolved ARPES experiments. This criterion enables us to conduct efficient spin-resolved ARPES experiments, significantly reducing the time costs by 5-10 times, compared to empirical stopping criteria.

Unveiling the charge density wave mechanism in vanadium-based Bi-layered kagome metals

The charge density wave (CDW), as a hallmark of vanadium-based kagome superconductor AV3Sb5 (A = K, Rb, Cs), has attracted intensive attention. However, the fundamental controversy regarding the underlying mechanism of CDW therein persists. Recently, the vanadium-based bi-layered kagome metal ScV6Sn6, reported to exhibit a long-range charge order below 94 K, has emerged as a promising candidate to further clarify this core issue. Here, employing micro-focusing angle-resolved photoemission spectroscopy (μ-ARPES) and first-principles calculations, we systematically studied the unique CDW order in vanadium-based bi-layered kagome metals by comparing ScV6Sn6 with its isostructural counterpart YV6Sn6, which lacks a CDW ground state. Combining ARPES data and the corresponding joint density of states (DOS), we suggest that the VHS nesting mechanism might be invalid in these materials. Besides, in ScV6Sn6, we identified multiple hybridization energy gaps resulting from CDW-induced band folding, along with an anomalous band dispersion, implying a potential electron-phonon coupling-driven mechanism underlying the formation of the CDW order. Our finding not only comprehensively maps the electronic structure of V-based bi-layer kagome metals but also provides constructive experimental evidence for the unique origin of CDW in this system.

Magnetic coupled electronic landscape in bilayer-distorted titanium-based kagome metals

Quantum materials whose atoms are arranged on a lattice of corner-sharing triangles, i.e., the kagome lattice, have recently emerged as a captivating platform for investigating exotic correlated and topological electronic phenomena. Here, we combine ultralow temperature angle-resolved photoemission spectroscopy (ARPES) with scanning tunneling microscopy and density functional theory calculations to reveal the fascinating electronic structure of the bilayer-distorted kagome material LnTi3Bi4, where stands for Nd and Yb. Distinct from other kagome materials, LnTi3Bi4 exhibits twofold, rather than sixfold, symmetries, stemming from the distorted kagome lattice, which leads to a unique electronic structure. Combining experiment and theory we map out the electronic structure and discover double flat bands as well as multiple Van Hove singularities (VHSs), with one VHS exhibiting higher-order characteristics near the Fermi level. Notably, in the magnetic version NdTi3Bi4, the ultralow base temperature ARPES measurements unveil an unconventional band splitting in the band dispersions which is induced by the ferromagnetic ordering. These findings reveal the potential of bilayer-distorted kagome metals LnTi3Bi4 as a promising platform for exploring novel emergent phases of matter at the intersection of strong correlation and magnetism. Published by the American Physical Society 2024

Observation of flat bands and Dirac cones in a pyrochlore lattice superconductor

Emergent phases often appear when the electronic kinetic energy is comparable to the Coulomb interactions. One approach to seek material systems as hosts of such emergent phases is to realize localization of electronic wavefunctions due to the geometric frustration inherent in the crystal structure, resulting in flat electronic bands. Recently, such efforts have found a wide range of exotic phases in the two-dimensional kagome lattice, including magnetic order, time-reversal symmetry breaking charge order, nematicity, and superconductivity. However, the interlayer coupling of the kagome layers disrupts the destructive interference needed to completely quench the kinetic energy. Here we demonstrate that an interwoven kagome network—a pyrochlore lattice—can host a three dimensional (3D) localization of electron wavefunctions. Meanwhile, the nonsymmorphic symmetry of the pyrochlore lattice guarantees all band crossings at the Brillouin zone X point to be 3D gapless Dirac points, which was predicted theoretically but never yet observed experimentally. Through a combination of angle-resolved photoemission spectroscopy, fundamental lattice model and density functional theory calculations, we investigate the novel electronic structure of a Laves phase superconductor with a pyrochlore sublattice, CeRu2. We observe evidence of flat bands originating from the Ce 4f orbitals as well as flat bands from the 3D destructive interference of the Ru 4d orbitals. We further observe the nonsymmorphic symmetry-protected 3D gapless Dirac cone at the X point. Our work establishes the pyrochlore structure as a promising lattice platform to realize and tune novel emergent phases intertwining topology and many-body interactions.

Establishing coherent momentum-space electronic states in locally ordered materials

Rich momentum-dependent electronic structure naturally arises in solids with long-range crystalline symmetry. Reliable and scalable quantum technologies rely on materials that are either not perfect crystals or non-crystalline, breaking translational symmetry. This poses the fundamental questions of whether coherent momentum-dependent electronic states can arise without long-range order, and how they can be characterized. Here we investigate Bi2Se3, which exists in crystalline, nanocrystalline, and amorphous forms, allowing direct comparisons between varying degrees of spatial ordering. Through angle-resolved photoemission spectroscopy, we show for the first time momentum-dependent band structure with Fermi surface repetitions in an amorphous solid. The experimental data is complemented by a model that accurately reproduces the vertical, dispersive features as well as the replication at higher momenta in the amorphous form. These results reveal that well-defined real-space length scales are sufficient to produce dispersive band structures, and that photoemission can expose the imprint of these length scales on the electronic structure.

Photoelectron spectroscopy of deprotonated benzonitrile.

The recent discovery of cyano-substituted aromatic and two-ring polycyclic aromatic hydrocarbon molecules in Taurus Molecular Cloud-1 has prompted questions on how the electronic structure and excited-state dynamics of these molecules are linked with their existence and abundance. Here, we report a photodetachment and frequency- and angle-resolved photoelectron spectroscopy study of jet-cooled para-deprotonated benzonitrile (p-[Bzn-H]-). The adiabatic detachment energy was determined as 1.70 ± 0.01eV, in good agreement with CCSD(T)/aug-cc-pVTZ calculations. The spectra across the first few electron-volts above threshold are dominated by prompt autodetachment processes associated with excitation of at least five short-lived (tens of femtoseconds) temporary anion shaped resonances since excitation cross sections are several orders of magnitude larger than direct photodetachment cross sections. The photoexcitation vibronic profile is dominated by a ≈640 cm-1 ring deformation mode. [Bzn-H]- lacks a valence-localized excited state situated below the detachment threshold and does not exhibit thermionic emission following excitation of the temporary anion resonances. Thus, [Bzn-H]- is unlikely to be stable in many interstellar environments.

Comment on “Tunneling-tip-induced collapse of the charge gap in the excitonic insulator Ta2NiSe5 ”

In this study, we investigate the discrepancy between the estimate of Q. He [], who observed a remarkable collapse of the exciton gap in Ta2NiSe5 due to the electrostatic field between the scanning tunneling microscope (STM) tip and the sample, and that of a recent angle-resolved photoemission spectroscopy investigation [C. Chen , ]. It is proposed that a critical factor contributing to this discrepancy is due to He 's assumption of a constant work function of the STM tip. This assumption led to an underestimation of the tip-induced electric field. Using a literature value for the sample work function, a more substantial electric field strength is obtained, which resolves the apparent conflict between the doping estimates of these two techniques. Furthermore, our findings highlight the importance of the STM tip condition, which can significantly impact the tip work function and, consequently, influence the doping estimation in experiments involving tip-induced electric fields. Published by the American Physical Society 2024

Surface Electronic Structure of Cr Doped Bi2Se3 Single Crystals

Here, by using angle-resolved photoemission spectroscopy, we showed that Bi2−xCrxSe3 single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi2Se3. These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.