Analog Silicon Photomultipliers Research Articles

A 3D photon-to-digital converter readout for low-power and large-area applications

A new trend in large area noble liquid experiments is to measure the scintillation light with photodetectors and their electronics inside the active volume. Compared to the typical approach of using silicon photomultipliers (SiPM) with an analog readout chain leading to an analog-to-digital converter, this paper presents a new 3D photon-to-digital converter (PDC) readout that takes advantage of the binary nature of the single-photon avalanche diodes (SPAD). The readout contains 4096 pixels over 25 mm2, each including a 3D bonding pad and a quenching circuit. The readout features three different outputs: a fast flag to get the timestamp of each event from an external time-to-digital converter, a digital sum to retrieve the number of pixels triggered during an event, and an analog monitor to generate an analog SiPM-like output. The analog monitor is also used to validate the two former digital outputs. The readout also includes 61 2D CMOS SPADs for validation purpose prior to the final 3D integration with SPADs custom made according to our design by Teledyne DALSA (Bromont, Canada). As a first system integration toward large-area detector applications, a mini-tile of 2 × 2 readouts has been developed to test all the functionalities. The measured single-photon timing resolution ranges from 72 to 93 ps FWHM across the mini-tile SPAD channels population (i.e. 4 × 61 channels). The flag timing resolution is below 95 ps RMS, which includes the contribution of the optimized flag H-tree but also an additional trigger tree that replaces the 3D SPAD array at this stage of development. Once bonded with the 3D SPADs, the trigger tree won't be required to measure the flag timing resolution. With the removed contribution of the trigger tree, the estimated flag timing resolution should be below 45 ps RMS. The extent of the benefits of the digital sum output depend on the application, and this paper focuses on two cases. First, a low-power coincidence scheme such as required by the nEXO liquid xenon experiment, leading to a power consumption as low as 140 μW per PDC. With a finer sampling of the scintillation light such as required for pulse shape discrimination in liquid argon, the power consumption remains below 100 μW per PDC. Overall, this readout is designed as a replacement for a typical analog SiPM chain, without compromise on the performances.

Scintillation and cherenkov photon counting detectors with analog silicon photomultipliers for TOF-PET

Objective. Standard signal processing approaches for scintillation detectors in positron emission tomography (PET) derive accurate estimates for 511 keV photon time of interaction and energy imparted to the detection media from aggregate characteristics of electronic pulse shapes. The ultimate realization of a scintillation detector for PET is one that provides a unique timestamp and position for each detected scintillation photon. Detectors with these capabilities enable advanced concepts for three-dimensional (3D) position and time of interaction estimation with methods that exploit the spatiotemporal arrival time kinetics of individual scintillation photons. Approach. In this work, we show that taking into consideration the temporal photon emission density of a scintillator, the channel density of an analog silicon photomultiplier (SiPM) array, and employing fast electronic readout with digital signal processing, a detector that counts and timestamps scintillation photons can be realized. To demonstrate this approach, a prototype detector was constructed, comprising multichannel electronic readout for a bismuth germanate (BGO) scintillator coupled to an SiPM array. Main Results. In proof-of-concept measurements with this detector, we were able to count and provide unique timestamps for 66% of all optical photons, where the remaining 34% (two-or-more-photon pulses) are also independently counted, but each photon bunch shares a common timestamp. We show this detector concept can implement 3D positioning of 511 keV photon interactions and thereby enable corrections for time of interaction estimators. The detector achieved 17.6% energy resolution at 511 keV and 237 ± 10 ps full-width-at-half-maximum coincidence time resolution (CTR) (fast spectral component) versus a reference detector. We outline the methodology, readout, and approach for achieving this detector capability in first-ever, proof-of-concept measurements for scintillation photon counting detector with analog silicon photomultipliers. Significance. The presented detector concept is a promising design for large area, high sensitivity TOF-PET detector modules that can implement advanced event positioning and time of interaction estimators, which could push state-of-the-art performance.

Evaluation of Modular J-PET sensitivity

The Modular J-PET represents the latest advancement in the Jagiellonian-PET series, utilizing extended plastic scintillator strips. This prototype's modular design enables cost-effective imaging of multi-photon annihilation and positronium, allowing for easy assembly, portability, and versatility. Additionally, its lightweight construction facilitates static bed examinations with a mobile detection system that can be positioned conveniently alongside the patient, negating the requirement for spacious clinical settings. Comprising 24 modules arranged in regular 24- sided polygons circumscribing a 73.9 cm diameter circle, each module integrates 13 scintillator strips, measuring 50 cm in length and 6mm×24mm in cross-section. Scintillation light is captured at both ends through analog Silicon Photomultipliers (SiPMs). This research presents Sensitivity of the Modular J-PET tomograph, adhering to the NEMA_NU 2-2018 standards. Sensitivity measurement was performed with 〖^68〗Geline source inside the 5 sleeves aluminium phantom placed at center of the detector`s FOV and 10 cm offset from the center of detector. Analyzing the gathered data involved employing the specialized J-PET Framework software, developed within the C++ architecture. To validate the experimental findings, comparisons were made with GATE simulations, wherein the source and phantom were emulated in the same configuration as employed in the actual experiment.

Study of compatibility between a 3T MR system and detector modules for a second-generation RF-penetrable TOF-PET insert for simultaneous PET/MRI.

Simultaneous positron emission tomography/magnetic resonance imaging (PET/MRI) has shown promise in acquiring complementary multiparametric information of disease. However, designing these hybrid imaging systems is challenging due to the propensity for mutual interference between the PET and MRI subsystems. Currently, there are integrated PET/MRI systems for clinical applications. For neurologic imaging, a brain-dedicated PET insert provides superior spatial resolution and sensitivity compared to body PETscanners. Our first-generation prototype brain PET insert ("PETcoil") demonstrated RF-penetrability and MR-compatibility. In the second-generation PETcoil system, all analog silicon photomultiplier (SiPM) signal digitization is moved inside the detectors, which results in substantially better PET detector performance, but presents a greater technical challenge for achieving MR-compatibility. In this paper, we report results from MR-compatibility studies of two fully assembled second-generation PET insert detectormodules. We studied the effect of the presence of the two second-generation TOF-PET insert detectors on parameters that affect MR image quality and evaluated TOF-PET detector performance under different MRI pulse sequenceconditions. With the presence of operating PET detectors, no RF noise peaks were induced in the MR images, but the relative average noise level was increased by 15%, which led to a 3.1 to 4.2-dB degradation in MR image signal-to-noise ratio (SNR). The relative homogeneity of MR images degraded by less than 1.5% with the two operating TOF-PET detectors present. The reported results also indicated that ghosting artifacts (percent signal ghosting (PSG) ⩽ 1%) and MR susceptibility artifacts (0.044 ppm) were insignificant. The PET detector data showed a relative change of less than 5% in detector module performance between running outside and within the MR bore under different MRI pulse sequences except for energy resolution in EPI sequence (13% relative difference). The PET detector operation did not cause any significant artifacts in MR images and the performance and time-of-flight (TOF) capability of the former were preserved under different tested MRconditions.

An Analog SiPM Based Receiver With On-Chip Wideband Amplifier Module for Direct ToF LiDAR Applications

An analog silicon photomultiplier (SiPM) based receiver with wideband transimpedance amplifier (TIA) is proposed for direct ToF LiDAR applications. The analog SiPM comprises a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$16\times 32$ </tex-math></inline-formula> single photon avalanche diodes (SPADs) array with a 25% fill factor. A fully differential pixel readout circuit is proposed within the pixel cell to facilitate the monolithic integration with the subsequent TIA and reduce the output capacitance of the analog SiPM. The TIA with the multipath feedforward compensation technique is proposed to improve the stability and achieve a wider −3-dB bandwidth. The adder array is used in this design to output the intensity information for the walk error compensation and the target identification. The proposed receiver, which is fabricated in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.18~\mu \text{m}$ </tex-math></inline-formula> HV-CMOS technology, achieves a −3-dB bandwidth of 420 MHz. A maximum detection range of 65 m is obtained with 20 W laser peak power, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.8^{\circ }\times 1.8^{\circ }$ </tex-math></inline-formula> field of view, and 40 mm aperture. A ranging accuracy of ±0.4 cm and precision of 4.5 cm are attained under a condition of 5 klux ambient light based on 1000 measurement results.

A Comprehensive Study on the Timing Limits of the TOFPET2 ASIC and on Approaches for Improvements

Novel electronic readout schemes of analog silicon photomultipliers (SiPMs) have shown impressive timing performance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\gamma $ </tex-math></inline-formula> -detectors in positron emission tomography (PET). However, transferring these novel concepts to the system level is a key to exploit the improved coincidence time resolution (CTR) in (pre-)clinical imaging. In this study, the commercially available TOFPET2 application-specific integrated circuits (ASICs) from PETsys Electronics S.A. is tested in terms of the best achievable CTR. The measurable CTR limits will be obtained by state-of-the-art high-frequency (HF) readout, minimizing the impact of the electronic front end on the time resolution. We achieved (73 ± 1) ps with the HF readout and (134 ± 10) ps with the TOFPET2 ASIC for a Ce-, and Ca-doped lutetium-oxyorthosilcate (LYSO) crystal of 2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 3 mm2 size. We show that SiPM signal amplification and an effectively reduced TOFPET2 input stage impedance boost the CTR of a 20-mm high LYSO:Ce crystal to 187 ± 8 ps. Our studies also lead to the observation of side peaks in the coincidence time difference spectrum. These peaks are studied in depth and a conclusion on the ASIC for 100-ps PET applications is drawn.

On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications

We present an analog silicon photomultiplier (SiPM) based on a standard 55-nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16 × 16 single-photon avalanche diodes (SPADs) and measures 0.29 × 0.32 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> . Each SPAD cell is passively quenched by a monolithically integrated 3.3 V thick oxide transistor. The measured gain is 3.4 × 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{5}$</tex-math></inline-formula> at 5 V excess bias voltage. The single-photon timing resolution (SPTR) is 185 ps and the multi-photon timing resolution (MPTR) is 120 ps at 3.3 V excess bias voltage. We integrate the SiPM into a co-axial light detection and ranging (LiDAR) system with a time-correlated single-photon counting (TCSPC) module in FPGA. The depth measurement up to 25 m achieves an accuracy of 2 cm and precision of 2 mm under the room ambient light condition. With co-axial scanning, the intensity and depth images of complex scenes with resolutions of 128 × 256 and 256 × 512 are demonstrated. The presented SiPM enables the development of cost-effective LiDAR system-on-chip (SoC) in the advanced technology.

Power-efficient high-frequency readout concepts of SiPMs for TOF-PET and HEP

Recent SiPM developments, together with improved readout electronics, opened new doors in time of flight positron emission tomography (TOF-PET) and high energy physics (HEP) research with a focus on prompt photon detection with inorganic scintillators. For instance, the relatively high Cherenkov yield of Bismuth Germanate (BGO) upon 511 keV gamma interaction has triggered a lot of interest, especially for its use in total-body PET scanners due to the relatively low production costs of BGO. However, especially in TOF-PET, the electronic readout for BGO still poses unsolved problems. Lab experiments have shown the benefit of Cherenkov detection, with coincidence time resolutions (CTRs) <200 ps FWHM achieved, but lack system integration due to an unacceptably high power consumption (≫30 mW) of the used amplifiers. Therefore it becomes necessary to investigate different readout concepts of modern analog SiPMs, for which we tested several high-bandwidth amplifiers, commercially available, small in dimension, cheap and with a power consumption ranging from 288 mW to only 17 mW. We found that all tested amplifiers showed similar CTR performance of ∼100 ps FWHM coupling 3×3×3 mm3 LYSO:Ce cubes from EPIC-crystals to S14160-3050HS Hamamatsu SiPMs with 3×3 mm2 active area. The CTR performance with BGO is comparable for all tested amplifiers and the noise contribution to the CTR is found negligible. The results obtained lead to the conclusion that power-efficient SiPM readout solutions can be found, also suitable for Cherenkov light detection with BGO, which opens the door for their implementation in application-specific integrated circuits (ASICs) and systems.

A 16-Channel Analog CMOS SiPM With On-Chip Front-End for D-ToF LiDAR

This article presents a 16-channel analog silicon photomultiplier (SiPM) with on-chip front-end for direct time-of-flight (D-ToF) LiDAR applications. The proposed receiver is mainly composed of 16-channel SiPM, variable gain amplifier (VGA) and time-to-digital converter (TDC). Each SiPM channel consists of 256 microcells, and their outputs are connected to a common output terminal in parallel. A novel active quenching circuit is adopted to reduce the long exponential tail in conventional SiPM and enable the capability of multi-echo detection. Current steering circuits are adopted within microcells to make the output current of SiPM immune to SPAD gain variations. The receiver was fabricated in 180-nm HV CMOS technology and integrated into the 16-line LiDAR prototype with optical components. Measurement results show that the sensor is capable of 20 m range imaging with 3 cm accuracy under 40 klux background light conditions. With the mechanical scanning system, a high-resolution image ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$240\times16$ </tex-math></inline-formula> ) can be obtained.

Architecture-Level Optimization on Digital Silicon Photomultipliers for Medical Imaging.

Silicon photomultipliers (SiPMs) are arrays of single-photon avalanche diodes (SPADs) connected in parallel. Analog silicon photomultipliers are built in custom technologies optimized for detection efficiency. Digital silicon photomultipliers are built in CMOS technology. Although CMOS SPADs are less sensitive, they can incorporate additional functionality at the sensor plane, which is required in some applications for an accurate detection in terms of energy, timestamp, and spatial location. This additional circuitry comprises active quenching and recharge circuits, pulse combining and counting logic, and a time-to-digital converter. This, together with the disconnection of defective SPADs, results in a reduction of the light-sensitive area. In addition, the pile-up of pulses, in space and in time, translates into additional efficiency losses that are inherent to digital SiPMs. The design of digital SiPMs must include some sort of optimization of the pixel architecture in order to maximize sensitivity. In this paper, we identify the most relevant variables that determine the influence of SPAD yield, fill factor loss, and spatial and temporal pile-up in the photon detection efficiency. An optimum of 8% is found for different pixel sizes. The potential benefits of molecular imaging of these optimized and small-sized pixels with independent timestamping capabilities are also analyzed.

3D Photon-to-Digital Converter for Radiation Instrumentation: Motivation and Future Works.

Analog and digital SiPMs have revolutionized the field of radiation instrumentation by replacing both avalanche photodiodes and photomultiplier tubes in many applications. However, multiple applications require greater performance than the current SiPMs are capable of, for example timing resolution for time-of-flight positron emission tomography and time-of-flight computed tomography, and mitigation of the large output capacitance of SiPM array for large-scale time projection chambers for liquid argon and liquid xenon experiments. In this contribution, the case will be made that 3D photon-to-digital converters, also known as 3D digital SiPMs, have a potentially superior performance over analog and 2D digital SiPMs. A review of 3D photon-to-digital converters is presented along with various applications where they can make a difference, such as time-of-flight medical imaging systems and low-background experiments in noble liquids. Finally, a review of the key design choices that must be made to obtain an optimized 3D photon-to-digital converter for radiation instrumentation, more specifically the single-photon avalanche diode array, the CMOS technology, the quenching circuit, the time-to-digital converter, the digital signal processing and the system level integration, are discussed in detail.

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal parasitic reduction, compactness and simplicity. The analog silicon photomultiplier has a third output, called fast terminal (FT), in addition to the anode and cathode, which is used for timing measurements. The analog silicon photomultiplier presents excellent photon detection efficiency greater than 40% at 420 nm, making it suitable for positron-emission tomography. Measurement results of the TDC indicate a resolution of 128 ps least significant bit (LSB) with a differential nonlinearity and integral nonlinearity of -1/+5 LSB and -2.4/+0.9 LSB, respectively. The discriminator comprises two preamplifier stages followed by a complementary self-biased differential amplifier stage which is coupled to the analog silicon photomultiplier's FT through a decoupling capacitor. The sensor is also fully backward-compatible through the standard output which can be coupled to dedicated ASICs and standard readout integrated circuits. In addition to the electrical, radiation, and optical performance, the integration of a custom CMOS analog silicon photomultiplier process with standard CMOS process was investigated.

Analytical Study of Front-End Circuits Coupled to Silicon Photomultipliers for Timing Performance Estimation under the Influence of Parasitic Components.

Full exploitation of the intrinsic fast timing capabilities of analog silicon photomultipliers (SiPMs) requires suitable front-end electronics. Even a parasitic inductance of a few nH, associated to the interconnections between the SiPM and the preamplifier, can significantly degrade the steepness of the detector response, thus compromising the timing accuracy. In this work, we propose a simple analytic expression for the single-photon response of a SiPM coupled to the front-end electronics, as a function of the main parameters of the detector and the preamplifier, taking into account the parasitic inductance. The model is useful to evaluate the influence of each parameter of the system on the slope of its response and to guide the designer in the definition of the architecture and the specifications for the front-end electronics. The results provided by the model have been successfully compared with experimental measurements from a front-end circuit with variable configuration based on a bipolar junction transistor (BJT), coupled to a 3 × 3 mm2 SiPM stimulated by a fast-pulsed laser source.

Investigation of the Power Consumption of the PETsys TOFPET2 ASIC

In state-of-the-art positron emission (PET) tomography systems, application-specific integrated circuits (ASICs)are commonly used to precisely digitize the signals of analog silicon photo-multipliers (SiPMs). However, when operating PET electronics in a magnetic resonance (MR) system, one faces the challenge of mutual interference of these imaging techniques. To prevent signal deterioration along long analog signal lines, PET electronics with a low power consumption digitizing the signals close to the SiPMs are preferred. In this study, we evaluate the power consumption of the TOFPET2 ASIC. Its power consumption ranges from 3.6 to 7.2 mW/channel as a function of the input stage impedance and discriminator noise settings. We present an analytical model allowing to compute the power consumption of a given ASIC configuration. The configured input stage impedance and discriminator noise have an impact on the coincidence resolution time, energy resolution, and photon trigger level. Since the TOFPET2 ASIC delivers state-of-the-art performance with a power consumption similar or even lower than other ASICs typically used for PET applications, it is a favorable candidate to digitize the signals of SiPMs in future simultaneous PET/MR systems.

Exploring TOF capabilities of PET detector blocks based on large monolithic crystals and analog SiPMs

Monolithic scintillators are more frequently used in PET instrumentation due to their advantages in terms of accurate position estimation of the impinging gamma rays both planar and depth of interaction, their increased efficiency, and expected timing capabilities. Such timing performance has been studied when those blocks are coupled to digital photosensors showing an excellent timing resolution.In this work we study the timing behaviour of detectors composed by monolithic crystals and analog SiPMs read out by an ASIC. The scintillation light spreads across the crystal towards the photosensors, resulting in a high number of SiPMs and ASIC channels fired. This has been studied in relation with the Coincidence Timing Resolution (CTR). We have used LYSO monolithic blocks with dimensions of 50 × 50 × 15 mm3 coupled to SiPM arrays (8 × 8 elements with 6 × 6 mm2 area) which compose detectors suitable for clinical applications.While a CTR as good as 186 ps FWHM was achieved for a pair of 3 × 3 × 5 mm3 LYSO crystals, when using the monolithic block and the SiPM arrays, a raw CTR over 1 ns was observed. An optimal timestamp assignment was studied as well as compensation methods for the time-skew and time-walk errors. This work describes all steps followed to improve the CTR. Eventually, an average detector time resolution of 497 ps FWHM was measured for the whole thick monolithic block. This improves to 380 ps FWHM for a central volume of interest near the photosensors. The timing dependency with the photon depth of interaction and planar position are also included.

Timing resolution of SiPM technologies before and after neutron irradiation

In recent years, silicon photomultiplier (SiPM) technology has been getting attention from various applications due to its low cost, immunity to magnetic field, compactness and ruggedness. However, its applicability in experiments with harsh radiation environments is still limited due to lack of corresponding radiation damage studies. A 10-year lifetime operation in a typical Small Angle Neutron Scattering (SANS) experiment with an acceptable degradation in photon detection efficiency has already been reported. In this article, we discuss the feasibility study of SiPM technology in neutron time of flight experiments. For this purpose, two analog SiPMs, developed by SensL and Hamamatsu, have been irradiated with cold neutrons (5 Å ) up to a dose of 6⋅1012 n/cm2 at the KWS-1 instrument of the Heinz Maier-Leibnitz Zentrum (MLZ) in Germany. After irradiation, the timing resolutions of the SiPMs have been measured under pulsed laser beam with a few hundred photons (405 nm) per pulse, and a degradation of up to 6 ps has been observed. The degradation might be a result of noise increase, introduced by surface defects caused by neutron exposure damage. Additionally, variation of the excess voltage helped to reveal the difference in the timing resolutions between irradiated and non-irradiated SiPMs, which remained almost constant.

Silicon Photomultipliers: Technology Optimizations for Ultraviolet, Visible and Near-Infrared Range

Silicon photomultipliers (SiPMs) are single-photon sensitive solid-state detectors that are becoming popular for several applications, thanks to massive performance improvements over the last years. Starting as a replacement for the photomultiplier tube (PMT), they are now used in medical applications, big high-energy physics experiments, nuclear physics experiments, spectroscopy, biology and light detection and ranging (LIDAR) applications. Due to different requirements in terms of detection efficiency, noise, etc., several optimizations have been introduced by the manufacturers; for example, spectral sensitivity has been optimized for visible light, near ultraviolet, vacuum ultraviolet, and near infrared light. Each one of them require specific processes and structural optimization. We present in this paper recent improvements in SiPM performance, owing to a higher cell fill-factor, lower noise, improved silicon materials, and deep trench isolation. We describe issues related to the characterization of analog SiPM, particularly due to the different sources of correlated noise, which have to be distinguished from each other and from the primary pulses. We also describe particular analyses and optimizations conducted for specific applications like the readout of liquid noble gas scintillators, requiring these detectors to operate at cryogenic temperatures.

A Sensor Network Architecture for Digital SiPM-Based PET Systems

Digital silicon photo-multipliers (SiPMs) have emerged in the recent past as a viable low cost alternative to photomultiplier tubes in positron emission tomography systems, providing multiple timestamps, energy and scintillation coordinates at high spatial granularity as well as MRI compatibility. The rich but large datasets generated by digital SiPM sensors have posed a data preprocessing and acquisition challenge, at the sensor, module and system level when a multitude of such sensors are to be used. In this paper, we present a sensor network-based approach for data acquisition, scalable to multiring configurations, whereby each module acts as an autonomous sensing and computing unit, capable of determining in real time basic information for each scintillation event and communicating it to its peers. The proposed architecture is equally applicable to modules based on analog SiPMs with local digitization. Coincidence detection can then take place in the ring itself, in a deferred and distributed manner to ensure scalability and allow to fully process only the fraction of the total events which corresponds to true coincidences. Simulations and experimental results show that it is indeed possible to handle the system level challenges associated with digital SiPMs at data rates compatible with realistic configurations, including event packet transfers and real-time coincidence detection, using Gb/s serial communication links for internode communication. The downside of the proposed architecture is represented by the need, at module level, for additional connectivity and processing power. We also address possible solutions for network-based clock synchronization, in particular a hybrid scheme, combining a hard-wired ring clock distribution network with a network-based clock offset estimator. The latter was tested in an 8-node system, performing synchronization in real time with a worst-case phase estimator stability (standard deviation of the clock phase offset estimation between two nodes) of about 160 ps, and substantial room for improvement (at least $5\boldsymbol \times $ according to simulations).

Improved single photon time resolution for analog SiPMs with front end readout that reduces influence of electronic noise

A key step to improve the coincidence time resolution of positron emission tomography detectors that exploit small populations of promptly emitted photons is improving the single photon time resolution (SPTR) of silicon photomultipliers (SiPMs). The influence of electronic noise has previously been identified as the dominant factor affecting SPTR for large area, analog SiPMs. In this work, we measure the achievable SPTR with front end electronic readout that minimizes the influence of electronic noise. With this readout circuit, the SPTR measured for one FBK NUV single avalanche photodiode (SPAD) was also achieved with a mm2 FBK NUV SiPM. SPTR for large area devices was also significantly improved. The measured SPTRs for mm2 Hamamatsu and SensL SiPMs were 150 ps FWHM, and SPTR 100 ps FWHM was measured for mm2 and mm2 FBK NUV and NUV-HD SiPMs. We also explore additional factors affecting the achievable SPTR for large area, analog SiPMs when the contribution of electronic noise is minimized and pinpoint potential areas of improvement to further reduce the SPTR of large area sensors towards that achievable for a single SPAD.

A 250-[formula omitted]m pitch 36-channel silicon photo multiplier array prototype using silicon on insulator technology

A 6×6 silicon photomultiplier (SiPM) array aimed at one-to-one coupling to a finely separated scintillator array was fabricated and characterized. All SiPMs were formed in the bulk substrate layer of a silicon on insulator (SOI) wafer for enabling future SiPMs which consists of 3-D integrated electronics without mechanical bonding. Each channel had a size of 250×250μm2 and was arranged for satisfying the counting-rate requirements of over 2 Mcps/mm2 in energy-resolvable X-ray photon counting computed tomography. To minimize the cost and complexity of the system’s back-end architecture and data acquisition, a novel two-dimensional coordinate readout was designed in anode terminals which contributes to the number of readout wires reduction without the position resolution degradation. As a feasibility study, the basic performance of a prototype analog SiPM array using the commercial SOI process was fabricated and characterized. Several features, such as a fast recovery time under 20 ns and a gain of 1×105 were within requirements to realize photon counting CT.