Amount Of Indium Research Articles

A Detailed Study on the Structural, Electrical and Optical Properties of (ZnO-GeO2) Substituted In2O3 Transparent Conducting Oxide

In this study, ZnO and GeO2 cosubstituted In2O3 ternary system is investigated with various characterization methods for optical, electrical and structural properties. This new transparent conducting oxide prepared different composition which can be symbolized as ZnxIn2-2xGexO3 samples optical properties show increasing increase the optical gap from 2.94 eV to 3.16 eV. Conductivity values for is about 308 S/cm and 1060 S/cm for unreduced and reduced samples respectively. The reduced conductivity of Zn0.476In1.032Ge0.476O3 is about 135 S/cm and for this composition samples are phase pure for new fluorite related phase. Thus, this study stresses the importance of cosubstitution to decrease amount of indium and understanding the various results for bulk samples.

New methodology to measure low free indium (III) concentrations based on the determination of the lability degree of indium complexes. Assessment of In(OH)3 solubility product

The vast industrial and consumer application of indium (solar cells, displays, etc.) risks its eventual leakage to the environment. Given the relevant role of speciation on the ecotoxicological effects of a certain total amount of indium, it is crucial to develop proper techniques to determine free concentrations of indium. The electroanalytical technique AGNES (Absence of Gradients and Nernstian Equilibrium Stripping) has already proved useful in such a goal. However, the optimization of suitable deposition times in some conditions might be laborious. This work presents a new strategy, based on the technique ADLC (Accumulation under Diffusion Limited Conditions), to determine lability degrees, which apart from their intrinsic physicochemical interest — by comparing reaction kinetics with diffusion rates—, provide useful guidelines for AGNES deposition times. The suggested novel methodology is illustrated with: i) the computation of lability degrees of indium-oxalate complexes (unreported up to date) and ii) measuring free concentration of indium (for the first time as low as pmolL−1) in precipitated solutions (i.e. containing precipitated indium hydroxide in the electrochemical cell). The method takes advantage of the fact that the addition of a suitable concentration of oxalate does not change the free indium concentration (which is buffered due to the existing precipitate at a fix pH), but creates a large amount of labile and mobile indium complexes that contribute to the desired accumulation at very large gains (preconcentration factors). Results confirm the validity of the solubility product of indium hydroxide reported in the database NIST 46.7.

Effect of Zinc Oxide Modification by Indium Oxide on Microstructure, Adsorbed Surface Species, and Sensitivity to CO

Additives in semiconductor metal oxides are commonly used to improve sensing behavior of gas sensors. Due to complicated effects of additives on the materials microstructure, adsorption sites and reactivity to target gases the sensing mechanism with modified metal oxides is a matter of thorough research. Herein, we establish the promoting effect of nanocrystalline zinc oxide modification by 1 – 7 at.% of indium on the sensitivity to CO gas due to improved nanostructure dispersion and concentration of active sites. The sensing materials were synthesized via an aqueous coprecipitation route. Materials composition, particle size and BET area were evaluated using X-ray diffraction, nitrogen adsorption isotherms, high-resolution electron microscopy techniques and EDX-mapping. Surface species of chemisorbed oxygen, OH-groups and acid sites were characterized by probe molecule techniques and infrared spectroscopy. Zinc oxide particle size was found to decrease and the BET area to increase with the amount of indium. The additive was observed in the form of amorphous indium oxide segregated on agglomerated crystalline ZnO nanoparticles. The concentration of surface species was found to be higher on In-modified zinc oxide. With the increase of indium content, the sensor response of ZnO(In) to CO was improved. Using in situ infrared spectroscopy, it was shown that oxidation of CO molecules was enhanced on the modified zinc oxide surface. The effect of modifier was attributed to promotion of surface OH-groups and enhancement of CO oxidation on the segregated indium ions, as suggested by DFT in previous work.

Multinary CdZnIn2(SeTe)5 thin films produced by arrested precipitation technique for photoelectrochemical solar cells

Chemically synthesized multinary CdZnIn2(SeTe)5 thin film used as photoanodes in solar cell have been systematically investigated. The indium ion concentration dependent morphological evolution and its consequent effect on photoelectrochemical properties were studied. The growth mechanism for the morphological evolution of CdZnIn2(SeTe)5 thin films has been proposed. Optical absorption values varied with the indium concentration and the band gap energy is found in the range 1.87eV to 1.72 eV. The X-ray diffraction (XRD) patterns reveal the formation of rhombohedra, cubic and hexagonal CdZnIn2(SeTe)5 thin films with the preferred (110), (138) and (220) orientation for CdZnIn2(SeTe)5 microflower, which is further supported by the analysis of the high resolution transmission electron micrographs (HRTEM). The SEM image revealed that the surface morphology of multinary thin films have been changed to microflower by systematic control of indium ion concentration. Finally, current-voltage measurements at different concentration for solar cell with maximum efficiency were carried out in order to find out the dominant transport mechanisms. The solar cell fabricated shows the best conversion efficiency of 1.28%. The deposition of a certain amount of indium was beneficial to the improvement of photoelectrochemical conversion efficiency. To the best of our knowledge, it is the highest efficiency for CdZnIn2(SeTe)5 based photoanode solar cells fabricated from APT.

Research Status of Recovery of Indium from Indium-Tin Oxide (ITO) Targets

Indium is widely used in some important fields due to its semiconductor and optoelectronic performance. While the reduction of indium minerals, as one of secondary resources, the amount of indium–tin oxide (ITO) waste target has been accumulated considerably. ITO film is the main functional fraction of LCD has consumed more than 60% of the indium production worldwide. Therefore, it is necessary to recycle indium from ITO waste. Some researchers have been done for proper treatment to recycle indium from ITO waste. In this paper, the extraction methods of indium from ITO waste target are introduced, and the advantages and disadvantages of each method are compared.

Enhanced photocatalytic activity and photocurrent properties of plasma-synthesized indium-doped zinc oxide nanopowder

Zinc oxide and indium-doped zinc oxide (IZO) nanopowders (wurtzite crystal phase) were synthesized by plasma-assisted chemical vapor synthesis route. In this method, the injected precursors were vaporized in the plasma flame, followed by vapor-phase reaction and subsequent quenching of the vaporized materials, resulting in the formation of nanoparticles. The amount of indium nitrate was varied to obtain 4 at. % and 8 at. % indium incorporated in zinc oxide, designated as ‘IZO1’ and ‘IZO2’, respectively. UV–visible absorbance spectra of the product showed a redshift in the spectra with increasing doping amount of indium. Photocatalytic properties of ZnO and IZO nanoparticles were evaluated using the degradation of methylene blue (MB) under ultraviolet irradiation, and the kinetic analyses indicated that the photodegradation followed pseudo-first order kinetics. In addition, IZO1 nanoparticles exhibited superior photocatalytic activity to ZnO and IZO2 nanoparticles, and the enhancement was attributed to the low recombination rate of photogenerated charge carriers. The major role of defect concentrations (oxygen vacancies) toward MB degradation was also analyzed by Raman and XPS spectra. The effect of scavengers in the photodegradation process indicated that h+ and O2• - were the main oxidant species involved in the degradation process. A mechanism of photodegradation process in IZO was proposed based on Mulliken electronegativity approach. Enhanced photocurrent density was obtained in IZO1, and the electrochemical impedance spectroscopy (EIS) results also pointed to an enhanced separation efficiency of electrons and holes at a lower indium doping amount as in IZO1.

Rubidium Fluoride Post-Deposition Treatment: Impact on the Chemical Structure of the Cu(In,Ga)Se2 Surface and CdS/Cu(In,Ga)Se2 Interface in Thin-Film Solar Cells.

We present a detailed characterization of the chemical structure of the Cu(In,Ga)Se2 thin-film surface and the CdS/Cu(In,Ga)Se2 interface, both with and without a RbF post-deposition treatment (RbF-PDT). For this purpose, X-ray photoelectron and Auger electron spectroscopy, as well as synchrotron-based soft X-ray emission spectroscopy have been employed. Although some similarities with the reported impacts of light-element alkali PDT (i.e., NaF- and KF-PDT) are found, we observe some distinct differences, which might be the reason for the further improved conversion efficiency with heavy-element alkali PDT. In particular, we find that the RbF-PDT reduces, but not fully removes, the copper content at the absorber surface and does not induce a significant change in the Ga/(Ga + In) ratio. Additionally, we observe an increased amount of indium and gallium oxides at the surface of the treated absorber. These oxides are partly (in the case of indium) and completely (in the case of gallium) removed from the CdS/Cu(In,Ga)Se2 interface by the chemical bath deposition of the CdS buffer.

Bmim][Br] as an Inexpensive and Efficient Medium for the Barbier‐Type Allylation Reaction Using a Catalytic Amount of Indium: Mechanistic Studies

Barbier‐type allylation reactions of aldehydes and ketones have been carried out with both unsubstituted and γ‐substituted allyl bromides using only a catalytic amount (0.1 equiv.) of In metal in [bmim][Br], but not in H2O, organic solvents, or other room‐temperature ionic liquids. The reactions did not require any metal activator and proceeded chemo‐ and regioselectively. The results of time‐dependent 1H NMR studies suggested that besides acting as a solvent, [bmim][Br] also activates the In metal surface by electron polarization to generate both CH2=CHCH2–In (I) and CH2=CHCH2–InBr2 (II) from allyl bromide and In. Of the active allylating intermediates, species II was regenerated by the in situ reduction of InBr3 with an imidazolium‐based N‐heterocyclic carbene, both produced during the process, accounting for the catalytic action of the In metal.

Defect state of indium-doped bismuth molybdate nanosheets for enhanced photoreduction of chromium(vi) under visible light illumination.

The construction of defect states is an effective method for regulating the energy band structure of photocatalytic semiconductor materials. Establishing defect states effectively is a particularly significant strategy to improve the photoelectric conversion efficiency. Herein, we report a peculiar method to manufacture defect states in indium-doped Bi2MoO6 by changing the valence state of the doped indium element. By increasing the amount of doped indium, different doping forms and valence states are produced, which causes distortion of crystal structure, generation of oxygen vacancies and variation in the elemental valence state. Specifically, when Bi is substituted with In(3-x)+, the acceptor energy level becomes higher than the valence band due to the p-type-like doping, which widens the width of the valence band and drives the up-shift of the valence band edges, resulting in narrowed bandgap and improved photoresponse ability. In addition, the photoelectrochemical performance tests using the In-doped Bi2MoO6 show that low-valent indium doping effectively improves the carrier separation efficiency, reduces the transmission impedance, and greatly improves the photocatalytic reduction performance of Cr(vi). This study provides a new insight to the design of efficient photocatalysts for the green and sustainable treatment of Cr(vi) pollution.

Research on the effect of alkali roasting of copper dross on leaching rate of indium

The byproduct copper dross produced during refining crude lead was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and fluorescence spectrometer (XRF), which showed that copper dross mainly contained lead, copper, zinc, arsenic, antimony, bismuth, sulfur and a small amount of indium and silver etc. The mineralogical phase change of oxidation roasting of copper dross by adding sodium hydroxide was analyzed with the help of XRD and SEM. The effects of water leaching, ratio of sodium hydroxide, roasting time, and roasting temperature on leaching rate of indium were investigated mainly. The experimental results showed that phase of lead metal and sulfides of lead, copper and zinc disappeared after oxidation roasting of copper dross by adding sodium hydroxide, new phase of oxides of lead, copper, zinc and sodium salt of arsenic and antimony appeared. Water leaching could remove arsenic, and acid leaching residue obtained was then leached with acid. The leaching rate of indium was higher 6.98% compared with alkali roasting of copper dross-acid leaching. It showed that removing arsenic by water leaching and acid leaching could increase the leaching rate of indium and be beneficial to reducing subsequent acid consumption of extracting indium by acid leaching. The roasting temperature had a significant effect on the leaching rate of indium, and leaching rate of indium increased with the rise of roasting temperature. When roasting temperature ranged from 450°C to 600°C, leaching rate of indium increased significantly with the rise of roasting temperature. When roasting temperature rose from 450°C to 600°C, leaching rate of indium increased by 60.29%. The amount of sodium hydroxide had an significant effect on the leaching rate of indium, and the leaching of indium increased with the increase of the amount of sodium hydroxide, and the leaching rate of indium was obviously higher than that of copper dross blank roasting and acid leaching.

Efficient Concentration of Indium(III) from Aqueous Solution Using Layered Silicates.

A synthetic layered alkali silicate, magadiite, and a natural montmorillite were found to concentrate indium(III) ion from aqueous solution by ion exchange reactions. The adsorption was examined by the reaction between silicates and aqueous solution of indium(III) chloride of different concentration at room temperature for 10 min. The adsorption isotherms were H type, indicating strong interactions between the silicates and indium(III) ion. The maximum adsorbed indium(III) amount for magadiite was quite high, ca. 0.70 mmol/g silicate, which corresponded to 96% of the ideal cation exchange capacity of magadiite derived from the chemical formula of Na2Si14O29. In addition, the selectivity of the indium was very high, and efficient adsorption of indium was observed from the sodium chloride solutions and the solutions containing zinc, nickel, and copper. The large adsorption capacity, high selectivity of indium, and short reaction time (10 min at room temperature) make the adsorption on magadiite useful for the concentration of indium(III) ion from aqueous environments.

Effect of sulfurization on the properties of Cu2ZnSnS4 thin films deposited using chemical spray pyrolysis over ITO substrates

Cu2ZnSnS4 thin films with different tin concentration are deposited over ITO coated glass substrates using chemical spray pyrolysis technique, by adjusting [Sn][Zn] ratio as 0.7, 1 and 1.3 in the precursor solution. As prepared films are subjected to sulfurization at a temperature of 500°C for 15min and its effect on the structure and composition of the films is studied. Sulfurization is carried out under non-vacuum condition inside the spray pyrolysis chamber making it compatible with the deposition technique. Pristine and sulfurized films are analysed using X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy, UV–Vis–NIR spectroscopy and scanning electron microscopy. X-ray diffraction and Raman spectroscopy suggest the formation of Cu2ZnSnS4 and other binary compounds in the pristine films. Analysis of the sulfurized films indicates that the sulfurization process has brought about a significant change in the composition of the films while improving its crystallinity considerably. Compositional analysis using X-ray photoelectron spectroscopy reveals that substantial amount of indium from the underlying ITO has diffused into the film after sulfurization. However, it is observed that increase in concentration of tin in the film limits the diffusion of indium. Scanning electron microscopic images show the improvement in morphology of the films after sulfurization.

Chloramine-T-Mediated Oxidation of Benzylic Alcohols Using Indium(III) Triflate.

The efficient oxidation of benzylic alcohols to carbonyl compounds was performed using chloramine-T and a catalytic amount of indium(III) triflate. The primary benzylic alcohols were converted to the corresponding aldehydes in a good yield, and the secondary benzylic alcohols were oxidized to ketones in a high yield. The optimized reaction conditions required 0.3 eq of indium(III) triflate and the use of acetonitrile as a solvent.

Directly drawn ZnO semiconductors and MWCNT/PSS electrodes via electrohydrodynamic jet printing for use in thin-film transistors: The ideal combination for reliable device performances

Solution-processed deposition of conducting and semiconducting materials enables the fabrication of large-area and low-cost electronic devices without the use of high-vacuum equipment. To obtain the possibility of commercializing solution-processed devices such as thin-film transistors (TFTs), easy and simple patterning process of each component become an important issue. In this study, we prepare directly patterned semiconductors and electrodes with the electrohydrodynamic (EHD) printing technique and utilize them in reliable n-type TFTs. By utilizing EHD printing technique, straight lines of zinc oxide (ZnO) semiconductor are successfully drawn from the highly soluble precursor, zinc acrylate (ZnA), and used as the active layers of TFTs. The resulting devices exhibit good TFT characteristics, and doping with a small amount of indium can enhance their performances. Furthermore, we print three different conducting materials on pre-patterned ZnO substrates for the realization of ZnO TFT arrays consisting of directly-drawn semiconductors and source/drain (S/D) electrodes. Multiwall carbon nanotube/polystyrene sulfonate (MWCNT/PSS) electrodes are found to form stable lines and their solution-processed TFTs display reliable operation with negligible hysteresis.

Photoresponses of InSnGaO and InGaZnO thin-film transistors

ITGO TFT were fabricated to study the photoresponses of indium-based oxide semiconductors. We found that the increased amount and low electron binding energy of indium can improve the recovery time of ITGO TFTs.

Luminescence properties of Ln3+–doped (Ce3+, Eu3+, Tb3+ or Er3+) Mixed–Metals Y3(Al,In)5O12 and Y3Al4.75Cr0.25O12 garnets synthesized by Sol–Gel method

By 1-5 mol-% of Ce3+, Eu3+, Tb3+ or Er3+ activated mixed–metals garnets (Y3Al5-xInxO12 and Y3Al4.75Cr0.25O12) were prepared by simple sol–gel process. Formation, microstructure and luminescence properties of these samples were analyzed using X–ray diffraction, scanning electron microscopy (SEM) and ultra violet–visible light absorbance (UV–VIS) technique. It was demonstrated, that the luminescence properties of Ln3+ were slightly dependent on the amount of indium and dopant concentration in the Y3(Al,In)5O12:Ln3+ compounds, while the emission of Ln3+ was absolutely quenched and the emission of Cr3+ was observed in the Y3Al4.75Cr0.25O12:Ln3+ samples. In addition, energy transfer from Tb3+ or Ce3+ to Cr3+ ions in co–doped Y3Al5O12 is also discussed.

Frontispiece: GaN and GaxIn1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization

Optoelectronic Devices A captivating peculiarity of GaInN alloys is a tunable band gap, depending on the Ga/In ratio, where the pure nitrides are bright yellow (GaN) or dark blue (InN). Gax In1-x N nanoparticles were prepared by a bottom-up approach (the urea glass route). The incorporation of an increasing amount of indium in the GaN structure is indicated by different colors (i.e., different band gaps), and the alloys are further investigated by TEM and optical microscopy. More information can be found in the Full Paper by C. Giordano et al. on page 18976 ff.

Neutron diffraction and thermoelectric properties of indium filled InxCo4Sb12 (x = 0.05, 0.2) and indium cerium filled Ce0.05In0.1Co4Sb12 skutterudites

The thermoelectric properties on polycrystalline single (In) and double filled (Ce, In) skutterudites are characterized between 300 and 700 K. Powder neutron diffraction measurements of the skutterudite compositions InxCo4Sb12 (x = 0.05, 0.2) and Ce0.05In0.1Co4Sb12 as a function of temperature (12–300 K) were carried out, which gives more insight into the structural data of single and double‐filled skutterudites. Results show that due to the annealing treatment, a Sb deficiency is detectable and thus verifies defects at the Sb lattice site of the skutterudite. Furthermore, we show by electron microprobe analysis that a considerable amount of indium is lost during synthesis and post‐processing for the single indium filled samples, but not for the double cerium and indium skutterudite sample. In our experiments, the double‐filled skutterudite is superior to the single‐filled skutterudite composition due to a higher charge carrier density, a comparable lattice thermal resistivity, and a higher density of states effective mass. Furthermore, we obtained a significantly higher Einstein temperature for the double‐filled skutterudite composition in comparison to the single‐filled species, which reflects the high sensitivity due to filling of the void lattice position within the skutterudite crystal.

Investigation of the shape of submonolayer quantum dots using a polarization-dependent photocurrent

Structural and optical characterization of multi-stack InAs/InGaAs submonolayer quantum dots (SML-QDs) grown under the Stranski–Krastanov growth mode was performed via a polarization-dependent study. Various angular in-plane (plane perpendicular to growth direction) and out-of-plane (plane parallel to the 45°-polished facet) polarization-dependent spectral photocurrents were measured to investigate the three-dimensional quantum confinement in multi-stack 0.3 monolayer InAs SML-QDs (the shape of SML-QDs embedded in an SML-QD based photodetector). Scanning transmission electron microscopy images revealed the interdiffusion of indium atoms between SML-QDs and the InGaAs quantum well due to an insufficient amount of indium, which agrees well with the tendency of s- to z-polarized response ratios.

Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.