Ambipolar Organic Thin-film Transistors Research Articles

Surface-Potential-Based Drain Current Model for Ambipolar Organic TFTs

A surface-potential-based drain current model is presented for ambipolar organic thin-film transistors (OTFTs). First, following the multiple trapping and release (MTR) conduction mechanism, a drain current model is presented for unipolar OTFTs considering exponentially distributed trap state density in the energy gap of an organic semiconductor. Next, from the model for unipolar OTFTs, analyzing electrons or (and) holes in different regimes, the model for ambipolar OTFTs is presented. The presented model can describe the drain current by compact expressions and can estimate the trap states density. The model is verified by available experimental data considering temperature characteristics.

Thin Film Transistors Incorporating Ultrapure Semiconducting Single-Walled Carbon Nanotubes and Green Dielectrics

Printed electronics is a burgeoning field that has received intense research interest and is beginning to experience commercial successes. Single-walled carbon nanotubes (SWNTs) are a unique and promising building block for incorporation into next generation superfast electronic devices. SWNTs have very high carrier mobilites, with band gaps compatible for integration into logic circuits. Their excellent mechanical flexibility allows for potential incorporation into flexible printed electronics, enabling fully-printed transistors and circuits with performances that support low cost, large area fabrication. Progress in incorporating SWNTs into commercial devices has been hindered by the presence of metallic SWNTs, which are produced alongside semiconducting SWNTs during synthesis, and negatively impact device performance. Fabrication of ambipolar SWNT organic thin film transistors (OTFTs) with high carrier mobilities and high on/off ratios remains particularly challenging; many examples in the literature required high temperature, expensive and energy-demanding processes.Since the initial discovery of conjugated polymer-assisted dispersion and purification of SWNTs in 2008, several polymer families have been successfully shown to selectively disperse semiconducting SWNTs. However, only a relatively small number of these supramolecular complexes have been incorporated into OTFTs. We used a novel conjugated polymer to exclusively disperse semiconducting SWNTs. The dispersal procedure requires a simple sonication and centrifugation, during which the metallic SWNTs sediment out. Solution purity was evaluated using UVVis- NIR and Raman spectroscopies. The resulting dispersions are amenable to solution processing techniques such drop casting and spin coating, allowing for the potential for large area device fabrication at room temperature. Ambipolar OTFTs were fabricated under ambient conditions using this solution and tested in both air and under inert atmosphere. The presence of excess conjugated polymer, solution deposition techniques, SWNT density, surface treatment, and post-fabrication treatment were all investigated to determine which parameters facilitated the production of OTFTs with high mobilities (>20 cm2V-1s-1), high on/off ratios (10^6-10^8), negligeble hysteresis, controlled threshold voltages, and high bias stability.[1] Protocols for sorting and dispersing ultrapure sc-SWNTs with conjugated polymers for thin-film transistor (TFT) applications have been well refined. Conventional wisdom dictates that removal of excess unbound polymer through filtration or centrifugation is necessary to produce high- erformance TFTs. However, this is time-consuming, wasteful, and resource-intensive. We challenge this paradigm and demonstrate that excess unbound polymer during semiconductor film fabrication is not necessarily detrimental to device performance.[2] With focus on further improving device performance, we look to green, compostable dielectrics to pair with SWCNTs. We report a tri-layer dielectric using poly (lactic acid) (PLA), poly(vinyl alcohol)/cellulose nanocrystals (PVAc) and toluene diisocyanate terminated poly(caprolactone) (TPCL) which we integrated into SWCNT based TFTs in a top gate bottom contact architecture. The PVA provides a high dielectric constant due to the hydroxy groups, the cellulose is used to optimize the viscosity, the TPCL layer provides a robust hydrophobic surface[3], and the PLA eliminates the interfacial charge traps present in the PVAc. This leads to a decrease in leakage currents and reduced the polarity at the dielectric/semiconductor interface. The TFTs fabricated using tri-layer dielectrics led to air stable and balanced hole and electron mobilities which was not observed for the PVAc/TPCL bilayer systems with supressed hole mobility. These TFTs were then used to study the impact of electrochemical doping on the performance of sc-SWCNT TFTs when switching from n-type, where an electrical double layer is formed, to p-type, where the TFSI anions are free to interact with the sc-SWCNTs.[4]The following presentation will focus on the engineering of sc-SWNTs based electronic devices. The choice of conjugated wrapping polymer, dielectric and processing conditions on film formation and the TFT device performance.

Synthesis and application of dual electron-deficient featured copolymers and their sequential fluorination for ambipolar organic thin film transistors

Low-band-gap and thermally stable conjugated polymers developed using a dual acceptor–acceptor strategy and the addition of S and F atoms.

Solution-processed ambipolar organic thin-film transistors and inverters in a single substrate through self-assembled monolayer-treated electrodes

Self-assembled monolayer-treated source–drain electrodes enabled the development of high-performance ambipolar organic thin-film transistors using a donor–acceptor-type polymer, PNDI-TVT, and a complementary-like inverter on a single substrate.

Green solvent-processed complementary-like inverters based on ambipolar organic thin-film transistors

In the trends of ever-growing worldwide interest for the environment/health and the corresponding legal regulations, there have been various studies to replace toxic halogenated/aromatic hydrocarbon organic solvents commonly used in the solution-processing of organic semiconductors (OSCs) with more sustainable green solvents. In this paper, we fabricated ambipolar organic thin-film transistors (OTFTs) and complementary-like inverters by blending a p-type OSC (6,13-bis(triisopropylsilylethynyl)pentacene; TIPS-pentacene) and a n-type OSC (N,N'-di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide; PTCDI-C8) in a single green solvent anisole. In particular, shellac was employed as green dielectric materials and the electrical performance of the resulting devices were compared with those fabricated using toxic solvents or commonly used oxide-based dielectrics. The bulk-heterojunction (BHJ)-structured OTFTs in the optimized condition exhibited typical ambipolar characteristics with relatively balanced charge carrier mobilities as high as 0.042 and 0.14 cm2 V−1s−1 for hole and electron, respectively. Additionally, complementary-like inverters based on the two optimized ambipolar OTFTs showed a decent transfer gain as high as 21 at negative supply voltages of −60 V. Thus, by demonstrating the applicability of green solvents not only for OTFTs but also in the implementation of circuit devices, we expect that the results obtained will spark more interest for the more sustainable fabrication of OSC-based electronic devices and their commercialization/mass-production in the relevant industrial real cases.

Modeling of two complementary ambipolar organic thin film transistors: application to organic inverter

In this paper, we have study two types of thin-film organic transistors and their application to release the organic inverter. For manufacturing p-type and n-type organic thin film transistors (OTFT), pentacene and N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) have been used as organic semiconductors active layers. These organic thin film transistors have been shown excellent ambipolar operation. We proceeded initially to model and study these complementary organic transistors individually. Therefore we present the various electrical parameters resulting from the modeling of these two types of organic transistors (n-type and p-type) as well as the various parameters characterizing the organic inverter. Very good agreement is obtained between the experimental electrical characteristics of the two types of organic transistors and the characteristics obtained by the analytical model, as well as the experimental characteristics of the organic inverter thus produced.

Charge transport in phthalocyanine thin-film transistors coupled with Fabry–Perot cavities

We investigate charge transport in ambipolar organic thin-film transistors coupled to a Fabry–Perot cavity.

Augmenting n-Type Performance of Ambipolar Top-Contact Organic Thin-Film Transistors by Self-Generated Interlayers

We report n-type performance enhancement of an ambipolar donor–acceptor (D–A) polymer by suppressing its p-type behavior using a simple and versatile methodology of interlayer processing in top-contact organic field-effect transistors. In this approach, a judiciously selected interlayer material, polyethylene glycol (PEG), is codeposited as an additive with the semiconducting polymer DPP-T-TT active layer. During top-contact aluminum deposition, the PEG molecules migrate from within the bulk film to the organic/Al interface because of additive–metal interactions. The formation of the PEG interlayer was confirmed by X-ray photoelectron spectroscopy and its effect on the polymeric-interfacial microstructure was studied using angle-dependent grazing-incidence wide-angle X-ray scattering. We find that the PEG interlayer has two significant contributions to the n-type characteristics of the device: it suppresses hole injection while improving electron injection by tuning the effective work-function, and it enh...

Temperature effects on the electrical properties of ambipolar organic complementary-like inverters

Abstract Efficient and balanced pentacene-based ambipolar organic thin-film transistors (AmOTFTs) were prepared and ready for use to achieve simple fabrication of complementary-like inverters with high gains. We examined the effect of temperature on the electrical characteristics of pentacene-based AmOTFTs and corresponding complementary-like inverters. Such complementary-like inverters can perform nonpolar operations, such as first and third quadrant operations, and can work normally up to nearly 110 °C. In situ measurements demonstrated the excellent thermal stability of pentacene active layer at the corresponding temperatures. The operating principle of the ambipolar-based complementary-like inverters was also discussed. Given the ambipolar nature of pentacene active channel, the dual-carrier recombination and release processes governed the temperature-dependent switch behaviors of the inverters. A temperature-dependent linearity function was derived using the hysteresis switch voltage, thereby highlighting that pentacene-based ambipolar complementary-like inverters could potentially be employed in temperature sensors.

Donor–Acceptor Conjugated Polymers Based on Bisisoindigo: Energy Level Modulation toward Unipolar n-Type Semiconductors

Four bisisoindigo (bis-IID) derivatives containing different numbers of electron withdrawing fluorine (F) or nitrogen (N) atoms and eight alternating copolymers of them with 2,2′-bithophene (BT) or 3,3′,4,4′-tetrafluoro-2,2′-bithiophene (4FBT) were synthesized. Depending on the numbers of F and N atoms incorporated, the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) energy levels of the polymers were feasibly tuned in the ranges of −5.51 to −6.06 eV and −3.64 to −4.01 eV, respectively. Top gate and bottom contact (TGBC) organic thin-film transistors (OTFTs) were fabricated to study the semiconducting properties of the polymers. Five polymers, i.e., P0F-BT, P2F-BT, P4F-BT, P2N2F-BT, and P0F-4FBT that contain 0–4 F and N atoms in the repeating unit, with HOMO and LUMO energy levels above −5.90 and −3.80 eV, respectively, all showed ambipolar OTFT characteristics. Three other polymers P2F-4FBT, P4F-4FBT, and P2N2F-4FBT that contain 6 or 8 F and N atoms with HOMO ...

Air-stable, transparent flexible ambipolar organic thin film transistors based on CuPc-F16CuPc bi-channel structure

We report the fabrication of air-stable, transparent flexible ambipolar organic thin film transistors based on CuPc and F16CuPc bi-channel films deposited under 10−1 Pa, by using graphene gate electrode, fluoropolymer Cytop dielectric layer, and Au source/drain electrodes on polyethylene terephthalate substrates. The devices show outstanding air-stability and high optical transparency of above 75% with electron and hole mobilities up to 0.031 and 0.029 cm2/V·s, respectively. The excellent ambipolar performance, along with the outstanding air-stability and high optical transparency, make CuPc-F16CuPc bi-channel transistors as a promising candidate for organic integrated circuits.

Triple Acceptors in a Polymeric Architecture for Balanced Ambipolar Transistors and High‐Gain Inverters

The exploration of novel molecular architectures is crucial for the design of high-performance ambipolar polymer semiconductors. Here, a "triple-acceptors architecture" strategy to design the ambipolar polymer DPP-2T-DPP-TBT is introduced. The utilization of this architecture enables DPP-2T-DPP-TBT to achieve deep-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) levels of -5.38/-4.19 eV, and strong intermolecular interactions, which are favorable for hole/electron injection and intermolecular hopping through π-stacking. All these factors result in excellent ambipolar transport characteristics and promising applications in complementary-like circuits for DPP-2T-DPP-TBT under ambient conditions with high hole/electron mobilities and a gain value of up to 3.01/3.84 cm2 V-1 s-1 and 171, respectively, which are among the best performances in ambipolar polymer organic thin-film transistors and associated complementary-like circuits, especially in top-gate device configuration with low-cost glass as substrates. These results demonstrate that the "triple-acceptors architecture" strategy is an effective way for designing high-performance ambipolar polymer semiconductors.

Cyano-substituted benzochalcogenadiazole-based polymer semiconductors for balanced ambipolar organic thin-film transistors

Two new cyano-substituted benzochalcogenadiazoles were copolymerized with bithiophene, and the polymers show well balanced ambipolarity in transistors.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Air-Stable n-channel Diketopyrrolopyrrole-Diketopyrrolopyrrole Oligomers for High Performance Ambipolar Organic Transistors.

n-channel organic semiconductors are prone to oxidation upon exposed to ambient conditions. Herein, we report design and synthesis of diketopyrrolopyrrole (DPP)-based oligomers for ambipolar organic thin-film transistors (OFETs) with excellent air and bias stability at ambient conditions. The cyclic voltammetry measurements reveal exceptional electrochemical stability during the redox cycle of oligomers. Structural properties including aggregation, crystallinity, and morphology in thin film were investigated by UV-visible spectroscopy, atomic force microscopy (AFM), thin-film X-ray diffraction (XRD), and grazing incidence small-angle X-ray scattering (GISAXS) measurements. AFM reveals morphological changes induced by different processing conditions whereas GISAXS measurements show an increase in the population of face-on oriented crystallites in films subjected to a combination of solvent and thermal treatments. These measurements also highlight the significance of chalcogen atom from sulfur to selenium on the photophysical, optical, electronic, and solid-state properties of DPP-DPP oligomers. Charge carrier mobilities of the oligomers were investigated by fabricating top-gate bottom-contact (TG-BC) thin-film transistors by annealing the thin films under various conditions. Combined solvent and thermal annealing of DPP-DPP oligomer thin films results in consistent electron mobilities as high as ∼0.2 cm(2) V(-1) s(-1) with an on/off ratio exceeding 10(4). Field-effect behavior was retained for up to ∼4 weeks, which illustrates remarkable air and bias stability. This work paves the way toward the development of n-channel DPP-DPP-based oligomers exhibiting retention of field-effect behavior with superior stability at ambient conditions.

Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes

A fabrication method for transparent ambipolar organic thin film transistors with transparent Sb2O3/Ag/Sb2O3 (SAS) source and drain electrodes has been developed. A pentacene/N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) bilayer heterojunction is used as the active semiconductor. The electrodes are deposited by room temperature electron beam evaporation. The devices are fabricated without damaging the active layers. The SAS electrodes have high transmittance (82.5%) and low sheet resistance (8 Ω/sq). High performance devices with hole and electron mobilities of 0.3 cm2/V s and 0.027 cm2/V s, respectively, and average visible range transmittance of 72% were obtained. These transistors have potential for transparent logic integrated circuit applications.

Ambipolar organic thin film transistors prepared with a one step solution technique

One of the most challenging problems limiting the development of the technology of organic electronics is a lack of simple, solution based, techniques for producing organic thin film transistors (OTFTs) with ambipolar characteristics. In this work, a simple method of manufacturing ambipolar OTFTs, based on a zone-casting technique, is presented. This technique was used to prepare thin and highly oriented films from a combination of the p-type organic semiconductor, TIPS-Pentacene, with one of the two naphthalene bisimide derivatives, both exhibiting electron conductivity. The OTFTs produced with such active layers display ambipolar properties with symmetric characteristics and electron and hole mobility in the best case amounting to: μe=1.5×10−2 and μh=1.1×10−2cm2V−1s−1, respectively.

An isoindigo-bithiazole-based acceptor-acceptor copolymer for balanced ambipolar organic thin-film transistors

Balanced carrier transport is observed in acceptor-acceptor (A-A′) type polymer for ambipolar organic thin-film transistors (OTFTs). It is found that the incorporation of two electron-accepting moieties (BTz and IIG) into a polymer main chain to form A-A′ polymer PIIG-BTz could lower highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels and facilitate good molecular stacking of the polymer. Ambipolar transistor behaviour for PIIG-BTz, with the balanced hole and electron mobilities of 0.030 and 0.022 cm2 V−1 s−1 was observed in OTFT devices, respectively. The study in this work reveals that the utilization of acceptor-acceptor (A-A′) structure in polymer main chain can be a feasible strategy to develop ambipolar polymer semiconductors.

Bis(2-oxoindolin-3-ylidene)-benzodifuran-dione and bithiophene-based conjugated polymers for high performance ambipolar organic thin-film transistors: the impact of substitution positions on bithiophene units

The impact of substitution positions on the performance of PBIBDF based ambipolar organic thin-film transistors.

Solution-Processed Ambipolar Organic Thin-Film Transistors by Blending p- and n-Type Semiconductors: Solid Solution versus Microphase Separation.

Here, we report solid solution of p- and n-type organic semiconductors as a new type of p-n blend for solution-processed ambipolar organic thin film transistors (OTFTs). This study compares the solid-solution films of silylethynylated tetraazapentacene 1 (acceptor) and silylethynylated pentacene 2 (donor) with the microphase-separated films of 1 and 3, a heptagon-embedded analogue of 2. It is found that the solid solutions of (1)x(2)1-x function as ambipolar semiconductors, whose hole and electron mobilities are tunable by varying the ratio of 1 and 2 in the solid solution. The OTFTs of (1)0.5(2)0.5 exhibit relatively balanced hole and electron mobilities comparable to the highest values as reported for ambipolar OTFTs of stoichiometric donor-acceptor cocrystals and microphase-separated p-n bulk heterojunctions. The solid solution of (1)0.5(2)0.5 and the microphase-separated blend of 1:3 (0.5:0.5) in OTFTs exhibit different responses to light in terms of absorption and photoeffect of OTFTs because the donor and acceptor are mixed at molecular level with π-π stacking in the solid solution.