Low current, highly reliable operation at 80°C has been achieved for 650 nm band AlGaInP laser diodes (LDs) with a strained multiquantum well active layer on a (115)A substrate for the first time. The operation current was as low as 60 mA and the lifetime was 92 kh at 80°C, 5 mW. It was also shown that the operation current density is a dominant factor in determining the lifetime.