Abstract
Self-pulsating 630 nm band AlGaInP laser diodes with a strain-compensated MQW active layer have been successfully developed. A low threshold current of 48 mA was achieved, and relative intensity noise (RIN) was <7/spl times/10/sup -14/ Hz/sup -1/. These lasers have operated for more than 1000 h under 5 mW at 60/spl deg/C.
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