The investigation reports on the effect of aluminum-doped zin oxide (Al:ZnO), using sol–gel dip coating method for deposing thin films at different Al doping concentration values (i.e., 0, 2, 3, 4, 5, and 10 atomic %).The as-grown films have been examined through structural and optical investigations. The X-ray pattern reveals the highly desired hexagonal wurtzite crystal structure that is orientated in a direction of (002). When the Al doping concentration rises from 0 % to 10 %, the average size of the crystallites decreases (from 22 nm to 19 nm). The optical properties measured using UV–visible spectroscopy indicated significant enhancement with Al doping concentration due to light scattering. Dopants have a slight effect on the band gap energy; fluctuations are seen between 3.21 and 3.25 eV. Measurements of ZnO and ZnO:Al thin films’ extinction coefficient and refractive index revealed that the doping concentration of Al had a small effect on both. When the Al content reaches 10 % at. %, the optical properties gradually approach their highest value, encouraging further exploration of its viability in solar cell applications.