Abstract
The multilayer (10 layers) Al doped ZnO (AZO) thin films were deposited on glass substrate by sol-gel & dipping method. X-Ray diffraction measurements showed that the AZO films were polycrystalline with a hexagonal wurtzite structure. The morphological properties of the films were analyzed by atomic force microscopy showing continuous and homogeneous film, completely covering the substrates. The thickness, optical constants, optical band gap (Eg) and transmittance (T) of AZO films were assessed by spectroscopic ellipsometry on UV-vis-NIR spectral range. The AZO film has high transmittance above 80% in the visible region and the optical band-gap energy around 3.7 eV. The electrical characteristics regarding conductivity, mobility and carrier concentrations, were measured by Hall Effect measurements (van der Pauw method). The bulk carrier concentration of the AZO film with 10 layers was found to be 1.16x1019 cm-3. The vibrational bands were obtained by Raman analysis. Defects due to oxygen vacancies in the prepared AZO films were evidenced by photoluminescence spectroscopy (PL). The optical and electrical properties of the AZO thin films proved the possibility to be used in optoelectronic applications.
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