Abstract
In this study, undoped ZnO and Al-doped ZnO thin films were successfully deposited on ITO substrates at various concentrations using the SILAR method. The deposited thin films underwent characterization via SEM/EDS, XRD, and UV-Vis spectroscopy. XRD analysis revealed that the thin films crystallized at the nanoscale, with crystallization quality varying based on the concentration of Al dopant. SEM/EDS analysis indicated a notable influence of Al doping concentration on the morphology of ZnO thin films. UV-Vis analysis highlighted significant differences in both the optical band gap values and transmittance of the thin films depending on the dopant used.
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