Recently, Ag-film has been utilized as a reflective layer in organic-light-emitting- diode on silicion(OLEDoS). The formation of a reflective Ag-film layer was conducted by Ag-film deposition and following Ag-film chemical-mechanical planarization (CMP). The Ag-film has ductility property (i.e., hardness of 0.3 GPa) so that a reletively soft CMP pad should be used to minimize the generation of the CMP induced scratches. However, using a soft CMP pad, it is notably difficult to achieve a high Ag-film polishing-rate (i.e., 300 nm/min). Thus, to enhance Ag-film polishing-rate, a Fenton reaction between ferric ions and H2O2 has been applied. Although, a Fenton reaction enhancing dissolved oxygen concentration can increase remarkably the Ag-film polishing-rate, the CMP slurry using Fenton reaction has produced a detrimental slurry stability after mixing with H2O2 (i.e., extremely low H2O2 pot life time. In this study, as a solution, the Ag-film CMP slurry was designed via radical oxidation on the Ag-film surface during CMP, without using Fenton reaction (i.e., mixing ferric ions with H2O2). The radical oxidation was achived by using halide oxidant (i.e., H5IO6), which radical oxidation degree principally depended on halide oxidant concentration and slurry pH, showing a notable high Ag-film polishing-rate (i.e., 400 nm/min) without the precence of corrosion. Without using Fenton reaction, the secondary diameter of colloidal abrasives in the designed Ag-film CMP slurry was not changed for several months. In our presentation, we will prove the mechanism of the radical oxidation on the polished Ag-film surface. In addition, we will present the dependencies of the chemical dominant polishing properties (i.e., OH radical, chemical oxidation degree of the Ag-film surfcae, chemical composition of chemical oxidation, slurry adsortion degree, and corrosion potential and current) as well as the mechanical dominant polishing properties (i.e., electrostatic force between abrasives and Ag-film surface) on the halid oxidant concentration.
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