Addition Of Bi Research Articles

Effects of Bi modification and ultrasonic treatment on microstructure evolution and mechanical properties of AlMg5Si2Mn alloy

The effects of Bi modification and ultrasonic treatment (UST) on the microstructure and mechanical properties of AlMg5Si2Mn alloy were investigated. Compared to the alloy without any treatment, the eutectic Mg2Si phases are refined effectively by Bi addition, and its morphology is changed from the mazelike thick lamellars for the base alloy to thin coralline fibers for the containing Bi alloy. The modification of eutectic Mg2Si phase is attributed to the Bi segregation and composition supercooling in front of the growing Mg2Si phase. UST can assist modification of Bi on the eutectic Mg2Si phase and change the morphology of the primary α-Al phase in the AlMg5Si2Mn alloy from coarse dendrites to small near-spherical equiaxed crystals, meanwhile, which can also promote the homogenization of the treated melt and uniform distribution of Bi atoms or clusters in the melt. Moreover, the yield strength, ultimate tensile strength and elongation of the alloy modified by 0.3% Bi addition combined with UST at 660 °C are obviously enhanced, and the fracture modes of the alloys are changed from brittleness to toughness.

Thermodynamics-driven interfacial engineering of alloy-type anode materials

Alloy-type anodes can enable high specific capacity for Li-ion batteries, but the large volume change during cycling often causes fast-capacity fading. Here, we report a thermodynamically driven grain boundary engineering method to improve alloy-type anodes via the spontaneous formation of 2D interfacial phases (complexions). Notably, the 2.8 at% Bi-doped SnSb achieves improved cycling stability and rate capability, even though it is 99% dense and has a mean crystallite size 2.7× larger than the undoped SnSb reference sample. Cryogenic transmission electron microscopy reveals Bi segregation at grain boundaries. Thermodynamic modeling further suggests the stabilization of a nanoscale liquid-like interfacial phase. Synchrotron transmission X-ray microscopy shows the suppressed intergranular cracking upon cycling with Bi addition. It suggests that the liquid-like interfacial phase serves as a stress relief mechanism for the high volumetric expansion anode via improved grain boundary sliding and Coble creep, akin to room-temperature superplasticity observed in Sn-Bi. • Spontaneously formed liquid-like interfacial phase improves the SnSb-Bi anode • Cryogenic STEM reveals Bi segregation at SnSb grain boundaries • Transmission X-ray microscopy shows the suppressed cracking upon cycling • Liquid-like interfacial phase promotes grain boundary sliding and Coble creep Alloy-type anodes are promising for Li-ion batteries, but the large volume change during electrochemical cycling can cause fast degradation. Yan et al. report a thermodynamics-driven interfacial engineering method to improve alloy-type anodes via the spontaneous formation of liquid-like interfacial phase that promotes room temperature superplasticity to alleviate cracking.

Solubility of bismuth, antimony and arsenic in synthetic and industrial copper electrorefining electrolyte

The precipitation of problematic Group 15 elements (As, Sb and Bi) in synthetic and industrial copper electrorefining electrolyte was examined. Using published thermodynamic values, the solubility products of BiAsO4 and SbAsO4 at 65 °C were calculated as 0.69 and 1.50 g2 L−2, respectively. Experiments were performed where solutions were spiked with arsenic, bismuth and/or antimony, and the start of precipitation was determined based on changes in solution turbidity. For arsenic concentrations of 9–13 g L−1, the concentrations of Bi necessary for the beginning of BiAsO4 precipitation were higher for the industrial electrolyte (0.25–0.50 g L−1) than the synthetic electrolyte (0.05–0.10 g L−1) at each arsenic concentration examined. The results indicate that industrial electrolyte has a greater capacity than the synthetic electrolyte with respect to the precipitation of BiAsO4. In the synthetic electrolyte, precipitation occurs at 0.30 g L−1 of Sb(III) in the presence of 9 g L−1 of As(V) without the addition of Bi, and 0.20 g L−1 with the addition 0.15 g L−1 Bi. At 10–12 g L−1 of As(V), a concentration of 0.10 g L−1 of Sb(III) produced precipitation. In industrial electrolyte, the increase in Sb(V) from 0.10 g L−1 to 0.16 g L−1, significantly increased precipitation. The presence of As and Sb in the +3 and + 5 appears to influence the solubility of antimony. Furthermore, the industrial electrolyte has enhanced solubility of Sb(III) up to 0.40 g L−1 before precipitation was detected.

On the advantages of Bi addition into Sn-Cu-S lead-free solder

Incorporation of Bi into Sn-0.7Cu-0.08S lead-free solder alloy was applied to investigate its advantages on the melting temperature, wettability, microstructure, mechanical properties and corrosion behaviour. The results indicate that the addition of Bi lowers the melting temperature of the Sn-0.7Cu-0.08S, but enlarges its pasty range. The wettability of Sn-0.7Cu-0.08S on Cu substrate is considerably enhanced with the increase of Bi, as well as the ultimate tensile strength and vickers hardness. The improvement of the mechanical properties can be attributed to the refined microstructure by Bi addition. The corrosion resistance of Sn-0.7Cu-0.08S is obviously increased with the increase of Bi content. Analyses by SEM and XRD indicate that the corrosion product on the solder alloy surface is SnO2.

Optimizing Room-Temperature Thermoelectric Performance of n-Type Bi2Te2.7Se0.3.

Bi2Te3-based compounds are exclusive commercial thermoelectric materials around room temperature. For n-type compounds, optimal thermoelectric properties are normally obtained at temperatures higher than room temperature to suppress the bipolar effect through increased carrier concentration. We find that doping with trace amounts of Cd and the addition of excess Bi are effective ways to optimize carrier concentration and achieve enhanced room-temperature thermoelectric performance for the Bi2Te2.7Se0.3 alloy in this work. For the Cd-doped samples, the replacement of Cd with Bi leads to not only a significant decrease in electron concentration but also apparently reduces the total thermal conductivity. The addition of excess Bi in the samples creates a Bi-rich synthetic atmosphere during the synthesis process, leading to increased BiTe antisite defects, decreased electron concentration, and reduced total thermal conductivity. Doping a small amount of Cd or adding excess Bi causes optimal thermoelectric performance of the n-type Bi2Te2.7Se0.3 sample shifts obviously toward low temperatures, and the samples with 0.4 atom % Cd and 0.8 atom % excess Bi achieve maximum zT of ∼0.97 at 448 K and ∼0.88 at 348 K, respectively.

Influence of Bi addition on the optical properties of As40Se60 thin films

In the present work, structural, microstructural, compositional and electronic band gap properties of As40Se60 and As40Bi15Se45 bulk and thin films are reported. The films were prepared by thermal evaporation technique under high vacuum. X-ray diffraction (XRD) study indicated amorphous nature of As40Se60 in bulk prepared by melt quenching technique. Bi incorporation in As40Se60 with composition Bi15As40Se45 however led to nucleation of Bi2Se3 nanocrystallites in the amorphous matrix of As40Se60. The films made out of the two targets of composition As40Se60 and As40Bi15Se45 did not show any XRD peak, indicating their amorphous nature. UV-Visible-NIR spectroscopic study indicated a large decrease in the electronic band gap from 1.74 eV in films of composition As40Se60 to 1.28 eV for compositon Bi15As40Se45. This decrease is explained on the basis of a high concentration of defect states leading to the presence of localized states in the band gap due to Bi incorporation. Field emission scanning electron microscopy (FESEM) images show smooth and homogeneous surface for the As40Se60 films, while Bi incorporation led to increases of the surface roughness in the Bi15As40Se45 films. The decreased band gap and increased surface roughness on Bi incorporation in As40Se60 films indicate the suitability of these films for solar cell applications.

Improved critical current density property in ex situ processed MgB2 tapes using filling powders with metallic particle addition

MgB2 powders milled with low-melting-point metallic particles, Bi and In, and Fe-sheathed tapes using those milled powders were sintered at various temperatures. With increasing the amount of those additives, the wear of WC jar and balls during milling process is promoted. Compared with In addition, Bi addition clearly causes the formation of some amorphous or poor crystalline phase in the as-milled state. Concerning the sintered tape samples, the optimal sintering temperature (Tsin), at which best performance in transport critical current density (Jc) at 4.2 K in 10 T is obtained, is 680 °C for the tapes using the milled powders with In addition. This temperature is lower than that by 30 °C for the tapes without additives. Furthermore, In addition promotes the reaction at the interface between the MgB2 core and the Fe sheath. In contrast, Bi addition appreciably causes neither reduction of the optimal Tsin nor the promoted reaction at the interface. Although both additives hardly bring about critical temperature (Tc) reduction, only Bi addition can improve the transport Jc property. This Jc enhancement is mainly attributed to improved grain connectivity. In addition itself can be effective for grain connectivity improvement as well. However, reduced upper critical and irreversibility fields (Hc2 and Hirr) brought about by the addition degrade the Jc property.

Plastic Scintillators and Radiation Detectors Based on Triphenyl Pyrazoline Derivatives

AbstractPlastic scintillators (PS) allow design of portative lightweight devices for quantification of low‐activity radiation sources. We have recently suggested a new type of organic fluorophores based on triphenyl pyrazoline (PZ) derivatives with high fluorescence quantum yield showing high radioluminescence when combined with a polyvinyltoluene (PVT) matrix. In this publication we report on radioluminescence properties of the PZ−X family with various halogen substitution (X=F, Cl, Br, I), or having vinyl functional group (vPZ, X=vinyl). PS based on such fluorophores and PVT matrix can be prepared as bulk samples, micrometer size beads or cladding on optical fibers. Application of fluorophores with vinyl functional groups enabled their enhanced interaction with the matrix due to covalent bonding between the components. We demonstrate high performance of PZ−X fluorophores and especially vPZ fluorophore in fabrication of nanocomposites for detection of various types of radiation. Scintillators have enhanced gamma ray detection capabilities with an addition of triphenyl Bi, or Gd2O3 nanoparticles. High fluorescence quantum yield and luminosity of PZ fluorophores allows dramatical reduction of their content in PS systems. Mechanisms of energy transfer and conversion during scintillation process are discussed. Special consideration is given to enhancement of α/β and neutron/gamma (n/γ) pulse shape discrimination (PSD) function of the developed scintillators.

A novel perovskite ferroelectric KNbO3-Bi(Ni1/2Ti1/2)O3 nanofibers for photocatalytic hydrogen production

Novel perovskite ferroelectric (1-x)KNbO3-xBi(Ni1/2Ti1/2)O3 nanofibers were synthesized by electrospinning for the first time. The synthesized 0.99KNbO3-0.01Bi(Ni1/2Ti1/2)O3 nanofibers displayed the optimal photocatalytic activity with a hydrogen production rate of 0.57 μmol·h−1 for 20 mg under visible light radiation. By first principles calculations, a midgap of Ni 3d was formed between the O 2p states at the valence band maximum and the Nb 4d states at the conduction band minimum due to the addition of Bi(Ni1/2Ti1/2)O3, which may be the principal reason for the visible light response in this work. In addition, the hydrogen production rate of polarized 0.99KNbO3-0.01Bi(Ni1/2Ti1/2)O3 nanofibers was twice as high as that of unpolarization under visible light irradiation, indicating that the internal dipole field can accelerate the separation of photogenerated electron-hole pairs. This may provide a new viewpoint for improving the visible light response of perovskite-oxide ferroelectrics.

Influence of 1.5 wt.% Bi on the Microstructure, Hardness, and Shear Strength of Sn-0.7Cu Solder Joints after Isothermal Annealing.

This manuscript reports the isothermal annealing effect on the mechanical and microstructure characteristics of Sn-0.7Cu-1.5Bi solder joints. A detailed microstructure observation was carried out, including measuring the activation energy of the intermetallic compound (IMC) layer of the solder joints. Additionally, the synchrotron µX-ray fluorescence (XRF) method was adopted to precisely explore the elemental distribution in the joints. Results indicated that the Cu6Sn5 and Cu3Sn intermetallic layers thickness at the solder/Cu interface rises with annealing time at a rate of 0.042 µm/h for Sn-0.7Cu and 0.037 µm/h for Sn-0.7Cu-1.5Bi. The IMC growth’s activation energy during annealing is 48.96 kJ mol-1 for Sn-0.7Cu, while adding Bi into Sn-0.7Cu solder increased the activation energy to 55.76 kJ mol−1. The µ-XRF shows a lower Cu concentration level in Sn-0.7Cu-1.5Bi, where the Bi element was well dispersed in the β-Sn area as a result of the solid solution mechanism. The shape of the IMC layer also reconstructs from a scallop shape to a planar shape after the annealing process. The Sn-0.7Cu hardness and shear strength increased significantly with 1.5 wt.% Bi addition in reflowed and after isothermal annealing conditions.

Discharge performance of extruded Mg-Bi binary alloys as anodes for primary Mg-air batteries

In this study, the microstructural characteristic, electrochemical behavior and discharge performance of extruded Mg-xBi (x = 0.5, 1.0 and 2.0 wt%) anodes are systematically evaluated. The results show that the cell voltage and anodic efficiency deteriorate as the Bi addition increased in galvanostatic discharge process. In addition, intermittent discharge behavior also confirms that the Mg-0.5Bi anode can output both excellent discharge activity and stable discharge process than the counterpart ones. This is attributed to the negative open current potential (OCP) value and thin and loose discharge products film as well as mitigated “chunk effect” (CE). Therefore, extruded Mg-0.5Bi alloy is a promising anode material for Mg-air battery.

Role of Bismuth incorporation on the structural and optical properties in BixIn35‐xSe65 thin films for photonic applications

AbstractThe present paper investigated the influence of Bi concentration on the structural, linear, and non‐linear optical properties of thermally evaporated BixIn35‐xSe65 (x = 0, 5, 7, 10, 15 at %) thin films. The structural analysis by the XRD measurements showed the crystalline nature at 7 and 15% Bi while the other concentrations showed amorphous nature. The corresponding bonding change was analyzed by Raman spectroscopy. The optical study by UV‐Vis spectroscopy showed the decrease in transmittance and an increase in absorbance property. The linear optical parameters such as absorption coefficient, extinction coefficient, optical density increased while skin depth decreased with Bi additives. The direct, as well as the indirect optical bandgap, decreased along with the decrease in the Tauc parameter. The variation is well explained on the basis of density of defect states by the Mott and Davis model. The non‐linear refractive index and non‐linear susceptibility increased significantly with Bi % which is good for non‐linear optical applications. The static linear refractive index as calculated by the Dimirov and Sakha empirical relation showed an incremental behavior with Bi% concentration and satisfied Moss's rule. The surface structure and elemental concentration were analyzed by FESEM and EDX analysis. The result of the above investigation suggests that these materials can be used as an absorbing layer for several optoelectronic and photonic applications.

Synthesis and characterization of Bi-doped antimony sulphide thin films for solar absorption applications

Producing stable semiconducting thin films with low band gap energy by a viable technique is challenging for solar energy harvesting. Herein, Bi-doped Sb2S3 thin films have been deposited on glass substrates by chemical bath deposition (CBD) technique followed by annealing at 400 °C. X-ray diffraction (XRD) patterns confirmed the orthorhombic phase of Sb2S3 and successful incorporation of Bi+3 in the host lattice. Raman spectroscopy revealed the characteristic vibrational modes of Sb2S3. Surface of films became smoother and compact with increasing Bi contents. Samples showed wide absorption range in the visible region. Band gap energy (Eg) values were estimated using Tauc's relation and a blue shift in the absorption edge was observed with addition of Bi, thus Eg increased from 1.58 to 1.71 eV. Higher values of absorption coefficient and absorption edge in the visible region suggest that the prepared Sb2S3 thin films can be a right choice of an absorber layer.

Microstructure Evaluation, Quantitative Phase Analysis, Strengthening Mechanism and Influence of Hybrid Reinforcements (β-SiCp, Bi and Sb) on the Collective Mechanical Properties of the AZ91 Magnesium Matrix

Gravitational melt-stir casting produced hybrid nano-reinforcements (β-SiCp) and micro-reinforcements (Bi and Sb) of AZ91 composites. SiCp-diffused discontinuous β-Mg17Al12 precipitation with a vital factor of SiC was exhibited at the grain boundary region, formulated Mg3Si throughout the composite and changed the present Mg0.97Zn0.03 phases. The creation of Mg2Si (cubic) and SiC (rhombohedral axes) enhanced the microhardness by 18.60% in a 0.5 wt.% SiCp/AZ91 matrix. The microhardness of 1 wt.% SiCp/AZ91 was slightly reduced after Mg0.97Zn0.03 (hexagonal) reduction. The best ultimate tensile value obtained was about 169.33 MPa (increased by 40.10%) in a 0.5 wt.% SiCp/AZ91 matrix. Microelements Bi and Sb developed Mg3Bi2, Mg3Sb2 and monoclinic C60 phases. The best peak yield strength of 82.75 MPa (increased by 19.85%) was obtained with the addition of 0.5 wt.% SiCp/1 wt.% Bi/0.4 wt.% Sb. The mismatch of the coefficient of thermal expansion of segregated particles and the AZ91 matrix, the shear transfer effect and the Orowan effect, combined with the quantitative value of phase existence, improved the compressive strengths of the composites with 0.5 wt.% β-SiCp, 1 wt.% β-SiCp and 0.5 wt.% SiCp/1 wt.% Bi/0.4 wt.% Sb by 2.68%, 6.23% and 8.38%, respectively. Notably, the Charpy impact strengths of 0.5 wt.% and 1 wt.% β-SiCp-added AZ91 composites were enhanced by 236% (2.89 J) and 192% (2.35 J), respectively. The addition of Bi and Sb with SiCp resulted in the formation of a massive phase of brittle Al6Mn. Al–Mn-based phases (developed huge voids and cavities) remarkably reduced impact values by 80% (0.98 J). The discussion covers the quantitative analyses of X-ray diffraction, optical microscopy and scanning electron microscopy results and fracture surfaces.

Construction of multi-domain coexistence enhanced piezoelectric properties of Bi0.5Na0.5TiO3-based thin films

Although the multi-phase coexistence makes Bi0.5Na0.5TiO3-based piezoelectric thin films possess stronger piezoelectric properties and more spacious application prospects in electronic devices, the domain reversal mechanism of Bi0.5Na0.5TiO3-based thin films cannot be accurately understood due to the size effect. In this study, the relationship between domain structure and piezoelectric properties of the (0.94-x)Bi0.5Na0.5TiO3-0.06BaTiO3-xBi(Fe0.95Mn0.03Ti0.02)O3 thin films are studied by using visualization technology PFM, structure and electrical properties characterizations. The results show that the addition of Bi(Fe0.95Mn0.03Ti0.02)O3 creates a long-range ordered/short-range disordered nanodomain coexisting structure. This kind of coexisting domain structure can realize the long-range reversal driven by disordered nanodomains under the external electric field, reduce the potential barrier and the hysteresis, and significantly enhance the piezoelectric properties of the thin films. Under the same conditions, the piezoelectric properties of the 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 thin films are enhanced nearly 2.3 times. This provides a reference for exploring the physical mechanism of high performance lead-free piezoelectric thin films.

A Comprehensive Study of Dynamic Recrystallization Behavior of Mg Alloy with 3 wt.% Bi Addition

The effect of the addition of bismuth on the dynamic recrystallization (DRX) behavior of the matrix has been investigated by comparing coarse grain pure Mg with the addition of 3 wt.% Bi, using a uniaxial compression test in the temperature range of 473–623 K and the strain rate of 0.01–10 s−1. The constitutive equation, processing map, microstructure, and texture evolution of the Mg-3Bi alloy were systematically investigated. The results showed that the Bi addition could refine the grain size and accelerate the DRX process. The DRX kinetics is discussed in detail, accompanied by extensive characterization employing EBSD analysis. The DRX of the Mg-3Bi alloy depended on the deformation temperature rather than the strain rate. The {10–12} tensile twin appeared at 573 K/0.01–0.1 s−1, and discontinuous DRX (DDRX), continuous DRX (CDRX) as the main mechanism in the case of 573 K/0.01 s−1, while the dominant mechanism was DDRX when deformation temperature and strain rate increased. Particle-stimulated nucleation (PSN) was also involved in the DRX of this new RE-free Mg alloy.

Influence of bismuth on microstructure, thermal properties, mechanical performance, and interfacial behavior of SAC305-xBi/Cu solder joints

This research sought to improve the properties of SAC305 solder joints by the addition of 1 and 2 wt.% Bi. The effects of bismuth doping on the microstructure, thermal properties, and mechanical performance of the SAC305-xBi/Cu solder joints were investigated. Bi-doping modified the microstructure of the solder joints by refining the primary β-Sn and eutectic phases. Bi-doping below 2 wt.% dissolved in the β-Sn matrix and formed a solid solution, whereas Bi additions equal to or greater than 2 wt.% formed Bi precipitates in the β-Sn matrix. Solid solution strengthening and precipitation strengthening mechanisms in the β-Sn matrix increased the ultimate tensile strength and microhardness of the alloy from 35.7 MPa and 12.6 HV to 55.3 MPa and 20.8 HV, respectively, but elongation decreased from 24.6% to 16.1%. The fracture surface of a solder joint containing 2 wt.% Bi was typical of a brittle failure rather than a ductile failure. The interfacial layer of all solder joints comprised two parallel IMC layers: a layer of Cu6Sn5 and a layer of Cu3Sn. The interfacial layer was thinner and the shear strength was greater in SAC305-xBi/Cu joints than in SAC305/Cu solder joints. Therefore, small addition of Bi refined microstructure, reduced melting temperature and improved the mechanical performance of SAC305/Cu solder joints.

Improvement of texture and magnetic properties of strip-cast grain-oriented electrical steel by trace Bi addition

The improvement of recrystallization texture and magnetic properties in grain-oriented electrical steel with trace Bi addition processed by strip casting process was studied in this study. Low casting temperature and sufficient liquid steel flow during strip casting process enabled relatively homogeneous distribution of Bi in the as-cast strip, which accelerated the precipitation during solidification and cooling process. As a result, relatively high density of duplex MnS + AlN, MnS and AlN was formed at grain boundaries and inside grain. Due to the synergistic effect of continuous precipitation and fragmentation of coarse precipitates during cold rolling, the number density of precipitates was increased and mean size was decreased along the processing route. High density of precipitates is attributed to severe inhomogeneous plastic deformation, which promoted the formation of high density in-grain shear bands during cold rolling and recrystallization Goss texture during annealing. Homogeneous microstructure with average grain size of ~ 11.6 μm, strong Goss texture with intensity of 2.5 multiples of random distribution, fine precipitates with number density of ~ 1.9 × 109 /cm2 and mean size of ~ 49 nm were formed after primary recrystallization annealing. Furthermore, grain-oriented electrical steel with Bi addition experienced complete secondary recrystallization of exact Goss grains during high-temperature annealing, which is attributed to beneficial optimization of Goss texture and strong inhibition effect, and superior magnetic induction B8 of 1.91 T was obtained. It is expected that this study paves a new way for fabrication of high-performance grain-oriented electrical steel.

Effects of Bismuth on the Microstructure, Properties, and Interfacial Reaction Layers of Sn-9Zn-xBi Solders

In electronic packaging, Sn-Zn lead-free solder has great application prospects. Sn-9Zn-xBi alloys were obtained by smelting. This paper details a systematic study of the effect of Bi on the microstructure, melting behavior, wettability, mechanical behavior, antioxidant properties, and electrical conductivity of Sn-9Zn-xBi alloy, as well as the interfacial reaction in Sn-9Zn-xBi/Cu joints. The coarse Zn-rich phase became larger with an increase in the addition of Bi, which is harmful to the oxidation resistance of the solders. The melting temperature, solidus temperature, and liquidus temperature decreased with the increase in the addition of Bi, but the melting range increased. Adding a proper amount of Bi could substantially improve the spreading rate of Sn-9Zn, but reduce its oxidation resistance. Because of the solid solution effect of Bi element, the tensile strength of the Sn-9Zn solders could be enhanced, but the plastic and electrical conductivity was decreased. The IMC layer of the Sn-9Zn and Cu joints consisted of the ε-CuZn5 phase and the γ-Cu5Zn8 phase. With an increase in the Bi element, the thickness of the interfacial reaction layer was firstly increased. When the Bi element content exceeded 3 wt.%, the inhibitory effect of the aggregated Bi elements on the formation of IMC was greater than the positive effect of the longer reaction time, and the thickness of the IMC decreased.

Effect of Bi Content on the Microstructure and Mechanical Performance of Sn-1Ag-0.5Cu Solder Alloy

The purpose of this work is to explore the impact of 0.5, 1.5, 2.5 and 3.5 wt.% Bi additions on the microstructure and mechanical performance of Sn-1Ag-0.5Cu solder alloy. Scanning electron microscope (SEM) and X-ray diffraction (XRD) were utilized to examine the microstructure of the present solders. Creep measurements have been used for the preliminary assessment of mechanical properties. The steady-state creep rate, έst, diminished as the Bi’s concentration increased and reached 2.5 wt.%, with this trend altering above this point. Furthermore, increasing the aging or testing temperature caused the έst values to increment for all the investigated solders. έst variations with different Bi content and aging temperature were observed by examining the Sn-Ag-Cu solders’ structural evolutions. The mean value of the activation energy of all investigated solder alloys was found to be ∼52 kJ/mol. This value is appropriate to that quoted for the dislocation climb through the core diffusion as the dominant operating mechanism. The XRD findings supported the microstructure and lattice parameters variations with both aging temperatures and bismuth concentrations.