Additional Annealing Step Research Articles

Amorphous Doped Indium Tin Oxide Thin‐Films by Atomic Layer Deposition.Insights into Their Structural, Electronic and Device Reliability

AbstractThin semiconducting films of magnesium doped indium‐ and tin oxide are prepared by thermal atomic layer deposition (ALD). The metal oxide films are deposited at 200 °C from the precursors trimethylindium, tetrakis(dimethylamido)tin, bis(ethylcyclopentadienyl)magnesium and water as oxidant. These thin‐films are observed to be amorphous by electron microscopy and X‐ray diffraction. However, they exhibited a near‐range atomic order with correlation lengths of up to 10 Å, as demonstrated by high energy total scattering at grazing incidence employing synchrotron radiation. Even minor alterations in composition reveal a significant impact on the thin‐film transistor (TFT) device parameters, due to magnesium's high oxygen binding capability and its ability to inhibit the formation of oxygen vacancies, resulting in a decrease of free charge carriers in the material. Stability tests indicate a device degradation after storage in ambient conditions due to water adsorption on the surface, which could be reversed by an additional annealing step which qualify the films as robust. This studie demonstrate the possibility of employing minor amounts of high band gap oxides such as MgO to manipulate and control the electric behavior of the active channel layer performance in inorganic TFT devices.

Combined magnetron sputtering and laser annealing process for the fabrication of proton conducting thin films

Acceptor doped barium zirconates are known for their exceptional protonic conductivity and the challenges in their fabrication. Within this work, BaZr0.8Y0.2O3-δ (BZY20) films were successfully deposited on a BaZr0.7Ce0.2Y0.1O3-δ/Ni (BZCY72/Ni) substrate using a combination of closed-field unbalanced magnetron sputtering and various annealing techniques such as conventional furnace annealing and laser annealing. Thin films could be tempered at only 800 °C with an additional laser annealing step and exhibit a heigh density as well as a sufficient protonic conductance. The highest measured ionic conductivity was 1.11*10−3 S/cm. The provided synthesis could pave the way for employing metallic supports in protonic ceramic fuel cells by using lower sintering temperatures than normally required.

Insights into the Electrochemical CO2RR Performance and Binding of Small Molecules on Quaternary Thiospinels Ag2FeSn3S8 and Cu2FeSn3S8.

Using a mechanical synthesis method in the form of ball milling and an additional annealing step, a novel and accelerated route for the synthesis of the thiospinels toyohaite (Ag2FeSn3S8) and rhodostannite (Cu2FeSn3S8) was discovered. Both thiospinels display faradaic efficiencies of up to 73% for CO2 reduction to CO using an organic electrolyte in an H-type cell. The materials were furthermore implemented in a zero-gap electrolyzer, with toyohaite producing 22% CO and 52% H2 at 100 mA cm-2 and rhodostannite 28% CO and 37% H2. The catalytically active sites are studied using density functional theory, revealing strong CO binding interactions on both Ag and Cu, whereas Sn is found to contribute to the decomposition of Ag2FeSn3S8 and Cu2FeSn3S8 by coordination with oxygen. Postmortem analysis of the thiospinel-based electrodes by means of SEM-EDX, XRD, XPS, and Mössbauer spectroscopy showed sulfur leaching from the catalysts after applying 100 mA cm-2. These spectroscopic results-in conjunction with DFT calculations of the oxidized surfaces-suggest that the catalytically active species consists of metal oxides. As a conversion of the metal sulfides into the corresponding metallic species was observed via XRD, the decomposition pathways of both catalysts were also computed using DFT; thus, elucidating the energetically most favorable decomposition products and expanding the possible composition of the catalysts postelectrolysis.

Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature

A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as a prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study spin properties of sp2-bonded boron nitride layers grown using Metal Organic Chemical Vapor Deposition at temperatures ranging from 700 °C to 1200 °C. With Electron Spin Resonance (ESR) we show that our layers exhibit spin properties, which we ascribe to carbon related defects. Supported by photoluminescence and Fourier-transform infrared spectroscopy, we distinguish three different regimes: (i) growth at low temperatures with no ESR signal, (ii) growth at intermediate temperatures with a strong ESR signal and a large number of spin defects, (iii) growth at high temperatures with a weaker ESR signal and a lower number of spin defects. The observed effects can be further enhanced by an additional annealing step. Our studies demonstrate wafer-scale boron nitride that intrinsically hosts spin defects without any ion or neutron irradiation, which may be employed in spin memories or magnetic field detectors.

Normally-off GaON/p-GaN gate HEMTs with selective plasma oxidation: from structural characterization, performance improvement to physical mechanism

In this letter, a p-GaN gate high-electron-mobility transistor (HEMT) with a high threshold voltage and better gate reliability was demonstrated by using selective plasma oxidation (SPO) and an additional low-temperature annealing step before gate metal is evaporated. After the SPO, a gallium oxynitride (GaON) dielectric layer was formed on the surface of p-GaN under the gate metal, and was studied by x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry, high-resolution transmission electron microscopy and energy dispersion spectroscopy. In addition, the fabricated metal/GaON/p-GaN gate HEMT exhibited a large threshold voltage (V TH) improvement from 1.46 V to 2.47 V. Furthermore, the forward gate breakdown voltage (V GS,BD) increased from 7.55 V to 11.10 V, and the maximum forward gate operating voltage (V GS-max) significantly improved from 5.0 V to 7.80 V for a ten-year lifetime with a 63.2% failure rate. Kelvin probe force microscopy reveals that the surface potential increased after SPO, and the shift of valence band maximum obtained by XPS spectra was 0.7 eV lower than that of the p-GaN, which further improves the Schottky barrier height at the gate metal/GaON interfaces to holes, thereby improving V TH and reducing I GS of the device. As a barrier layer, GaON suppressed the injection of carrier into the depletion region under a high electric field and enhanced the reliability of the gate.

Effect of Annealing on Visible-Bubble Formation and Stability Profiles of Freeze-Dried High Concentration Omalizumab Formulations.

In the clinical application of freeze-dried highly concentrated omalizumab formulations, extensive visible bubbles (VBs) can be generated and remain for a long period of time in the reconstitution process, which greatly reduces the clinical use efficiency. It is necessary to understand the forming and breaking mechanism of VBs in the reconstitution process, which is a key factor for efficient and safe administration of biopharmaceutical injection. The effects of different thermal treatments on the volume of VBs and stability of omalizumab, mAb-1, and mAb-2 were investigated. The internal microvoids of the cake were characterized by scanning electron microscopy and mercury intrusion porosimetry. Electron paramagnetic resonance was applied to obtain the molecular mobility of the protein during annealing. A large number of VBs were generated in the reconstitution process of unannealed omalizumab and remained for a long period of time. When annealing steps were added, the volume of VBs was dramatically reduced. When annealed at an aggressive temperature (i.e., -6 °C), although the volume of VBs decreased, the aggregation and acidic species increased significantly. Thus, our observations highlight the importance of setting an additional annealing step with a suitable temperature, which contributes to reducing the VBs while maintaining the stability of the high concentration freeze-dried protein formulation.

Improving the Electronic Conductivity of Alluaudite Na2.5Fe1.75(SO4)3 Cathodes for Na-Ion Batteries

The increasing dependency on batteries in modern technology has led to an ever-increasing demand that cannot be met by Li-ion batteries (LIBs) alone. The push towards using renewable energy and electric vehicles, coupled with the limited reserves of lithium resources is encouraging research into alternative options for electrochemical storage devices. Na-ion batteries (SIBs) are a promising alternatives due to the similarity of their chemistry to LIBs. This allows for utilisation of analogous materials and methods already in place for LIBs. Furthermore, SIBs are more economically viable and environmentally sustainable due to the abundance of the elements that can be utilised as electrode active materials. For example, SIB cathodes, such as Na2.5Fe1.75(SO4)3, can be synthesised from precursor materials that are widely available by-products of industry. The polyanionic framework of Na2.5Fe1.75(SO4)3 has three 3-dimensional vacancies within it, in which Na-ions de/intercalate.[1] However, the performance of Na-ion batteries is hindered by the low electronic conductivity of these polyanionic compounds, affecting the flow of electrons through the material and the reversible movements of the Na ions.[2] To address this issue, previous reports have shown that using a conductive additive such as carbon black and graphene oxides can increase the electronic conductivity of Na ion cathode materials and improving battery performance.[3]In this work, we investigate a non-stoichiometric alluaudite phase Na2.5Fe1.75(SO4)3 material (NFS), produced by a ball-milling-assisted solid-state synthesis. A study of the effects of variables on the ball milling process using the was carried out. A multi-step process involving a repetition of the ball milling and annealing was used to decrease particle size and eliminate impurities. The results were compared regarding particle size, impurities present, conductivity and battery performance. The obtained materials were characterised using X-ray diffraction, scanning electron microscopy and electrochemical impedance spectroscopy. The materials were tested as cathodes in sodium half-cells with 1 mol/L NaClO4 in ethylene carbonate (EC)/ propylene carbonate (PC) electrolyte. The additional ball milling and annealing steps saw a significant decrease in impurities present across all variations in methodology. All batteries show three redox peaks in their differential capacity plots, demonstrating that all three vacancies within the polyanionic framework of Na2.5Fe1.75(SO4)3 are active during charge and discharge. The best performing electrode achieved a capacity of 80 mAh/g using only C45 as a conductive additive. These are promising results that are expected to improve with further studies researching the addition of RGOs and MXenes into the ball milling process. These composite electrodes will be prepared by combining rGOs/MXenes with the NFS precursors during the synthesis process of Na2.5Fe1.75(SO4)3 to enhance battery performance further.

Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films.

Scalable production and integration techniques for van der Waals (vdW) layered materials are vital for their implementation in next-generation nanoelectronics. Among available approaches, perhaps the most well-received is atomic layer deposition (ALD) due to its self-limiting layer-by-layer growth mode. However, ALD-grown vdW materials generally require high processing temperatures and/or additional postdeposition annealing steps for crystallization. Also, the collection of ALD-producible vdW materials is rather limited by the lack of a material-specific tailored process design. Here, we report the annealing-free wafer-scale growth of monoelemental vdW tellurium (Te) thin films using a rationally designed ALD process at temperatures as low as 50 °C. They exhibit exceptional homogeneity/crystallinity, precise layer controllability, and 100% step coverage, all of which are enabled by introducing a dual-function co-reactant and adopting a so-called repeating dosing technique. Electronically, vdW-coupled and mixed-dimensional vertical p-n heterojunctions with MoS2 and n-Si, respectively, are demonstrated with well-defined current rectification as well as spatial uniformity. Additionally, we showcase an ALD-Te-based threshold switching selector with fast switching time (∼40 ns), selectivity (∼104), and low Vth (∼1.3 V). This synthetic strategy allows the low-thermal-budget production of vdW semiconducting materials in a scalable fashion, thereby providing a promising approach for monolithic integration into arbitrary 3D device architectures.

In Situ Observations of the Microstructural Evolution during Heat Treatment of a PH 13‐8 Mo Maraging Steel

The standard heat treatment of PH 13‐8 Mo maraging steels consists of solution annealing and subsequent aging. Herein, it is investigated how an additional intercritical annealing step prior to aging affects the microstructure, and, consequently, the mechanical properties of a PH 13‐8 Mo maraging steel. In situ techniques by means of high‐temperature electron backscatter diffraction and high‐temperature X‐ray diffraction are applied to study the microstructural changes during intercritical annealing and subsequent aging. In addition, high‐resolution investigation methods, such as transmission electron microscopy and atom probe tomography supplemented by transmission Kikuchi diffraction, are used for an in‐depth characterization of the microstructure. The results reveal that a diffusion‐controlled martensite to austenite transformation accompanied by partitioning of the substitutional atoms Cr, Ni, and Mo takes place during intercritical annealing. As a result of partitioning during intercritical annealing, an inhomogeneous distribution of Ni remains in the microstructure after the martensitic transformation. Consequently, the formation of reverted austenite is facilitated during subsequent aging due to existing Ni‐enriched zones in martensite. Since the fracture toughness is significantly enhanced compared to the standard heat treatment, it is suggested that this improvement is related to the increased phase fraction of reverted austenite.

Prediction of Unwanted Crystallization of Freeze-Dried Protein Formulations Using α-Relaxation Measurements.

There is a lack of methods to predict the isothermal crystallization behavior of amorphous freeze-dried formulations stored below the glass transition temperature. This study applies isothermal microcalorimetry to predict long-term crystallization during product storage time. The relaxation curve of a fresh sample recorded within 12 h after lyophilization is correlated with the long-term crystallization time at the same temperature. Storage conditions of 25 °C and 40 °C are examined and five model formulations containing either sucrose or trehalose with different concentrations of an IgG1 antibody are investigated. The amorphous formulations were created by different freeze-drying processes only differing in their freezing step (random nucleation; additional annealing step of 1.5 h and 3 h, controlled nucleation; quench cooling). Samples that crystallized during the study time of 12 months showed a promising correlation between their relaxation time and crystallization behavior upon storage. Furthermore, the study shows that polysorbate 20 strongly accelerates crystallization of sucrose and that the freezing step itself has a strong impact on the relaxation phenomena that is not levelled out by primary and secondary drying.

Direct fabrication of arrays of Cu(In,Ga)Se2 micro solar cells by sputtering for micro-concentrator photovoltaics

Micro-concentrator photovoltaics combines efficiency boosting light concentration with low electrical losses due to thermally cool sub-millimeter sized solar cells. Thin-film Cu(In,Ga)Se2absorber layers do not suffer from edge recombination enabling miniaturization to the micrometer size, which allows for considerable material saving. Cu(In,Ga)Se2micro solar cells have achieved excellent efficiencies under concentrated light, when fabricated by materially-wasteful lithography processes. However, for commercial consideration, material-efficient synthesis approaches are required. In this work, we demonstrate a novel approach to produce arrays of Cu(In,Ga)Se2micro absorber layers through a two-step process, where a Cu-In-Ga precursor layer is sputtered onto a photolithographically structured resist, followed by lift-off and selenization. Our investigation shows a detrimental contamination of the Cu-In-Ga micro-dots by the photoresist. Therefore, we introduce an additional annealing step in inert-gas atmosphere prior to the selenization step, which leads to the formation of electroactive Cu(In,Ga)Se2 micro absorbers. We report the synthesis and characterization of working micro solar cells with an efficiency of 1.2% under 1 Sun. This proof of principle opens up a new material-efficient synthesis route for the direct fabrication of arrays of micro solar cells and puts forward the potential to achieve higher power conversion efficiencies upon further process optimization.

Improvement of the self‐assembly of low χABA triblock copolymers with the addition of an ionic liquid

AbstractSelf‐assembly of high molecular weight commercially available low χ ABA triblock copolymers with ionic liquids (ILs) was observed after solvent casting without the implementation of an additional annealing step. Here, the addition of an IL to a triblock copolymer poly(methyl methacrylate‐b‐butyl acrylate‐b‐methyl methacrylate) (MAM) with an elastomeric central block and rigid end blocks is proposed to tune the self‐assembled morphology. Two different compositions of this copolymer with different initial microstructures (ill‐defined morphology without long‐range order and a lamellar morphology) were selected. The selectivity of the IL addition in one of the block phases was studied through the evolution of the glass transition of both blocks. The impact of the IL weight concentration on the morphology as well as the domain spacing is presented. Adding IL to the first copolymer detected a lyotropic disorder–order transition towards a gyroid morphology, observed even for a high molecular weight copolymer due to the low χ parameter, and for higher IL content a second transition to a lamellar morphology was observed. For the second copolymer, only an order–order transition (lamellae to cylinders) could be detected at high IL content. IL also enhanced the long‐range ordering of the MAM morphology obtained through solvent casting without additional annealing steps, compared with the same composition without IL. © 2022 Society of Industrial Chemistry.

Impact of Helium Ion Implantation Dose and Annealing on Dense Near-Surface Layers of NV Centers.

The implantation of diamonds with helium ions has become a common method to create hundreds-nanometers-thick near-surface layers of NV centers for high-sensitivity sensing and imaging applications; however, optimal implantation dose and annealing temperature are still a matter of discussion. In this study, we irradiated HPHT diamonds with an initial nitrogen concentration of 100 ppm using different implantation doses of helium ions to create 200-nm thick NV layers. We compare a previously considered optimal implantation dose of ∼ Hecm to double and triple doses by measuring fluorescence intensity, contrast, and linewidth of magnetic resonances, as well as longitudinal and transversal relaxation times and . From these direct measurements, we also estimate concentrations of P1 and NV centers. In addition, we compare the three diamond samples that underwent three consequent annealing steps to quantify the impact of processing at 1100 C, which follows initial annealing at 800 C. By tripling the implantation dose, we have increased the magnetic sensitivity of our sensors by %. By projecting our results to higher implantation doses, we demonstrate that it is possible to achieve a further improvement of up to 70%. At the same time, additional annealing steps at 1100 C improve the sensitivity only by 6.6 ± 2.7%.

A post-deposition annealing approach for organic residue control in TiO2 and its impact on Sb2Se3/TiO2 device performance.

We report a systematic investigation on the influence of two-step post-deposition treatments (PDTs) on TiO2 buffer layers deposited by ultrasonic spray pyrolysis (USP) for emerging Sb2Se3 photovoltaics. Air annealing is a typical method for recrystallizing chemically deposited TiO2 films. However, organic residues (such as carbon species) from a precursor solution based on titanium tetraisopropoxide and acetylacetone may still remain on the TiO2 surface, therefore requiring an additional annealing step. We demonstrate that vacuum annealing can be a suitable technological approach to decrease the concentration of carbon species in TiO2 films. Vacuum annealing was performed at temperatures at 160-450 °C prior to the 450 °C air annealing step. It was found that vacuum annealing at 160 °C followed by subsequent air annealing led to better device performance. This was explained by achieving an optimal balance between the removal of carbon content during vacuum annealing and the active recrystallization of TiO2 during air annealing. The decrease of carbon concentration by employing the two-step approach was supported by changes in the lattice parameters of TiO2 and proven by X-ray photoelectron spectroscopy (XPS). The given study provides experimental evidence on how nanoscale carbon species in the TiO2 heterojunction partner layer of a Sb2Se3 solar cell can affect the device's performance. By this approach, we generate complementary insights on how the quality of the main interface has an impact and can take a key role despite the optimized Sb2Se3 grain structure and orientation.

Additive Manufacturing as a Means of Gas Sensor Development for Battery Health Monitoring

Lithium-ion batteries (LIBs) still need continuous safety monitoring based on their intrinsic properties, as well as due to the increase in their sizes and device requirements. The main causes of fires and explosions in LIBs are heat leakage and the presence of highly inflammable components. Therefore, it is necessary to improve the safety of the batteries by preventing the generation of these gases and/or their early detection with sensors. The improvement of such safety sensors requires new approaches in their manufacturing. There is a growing role for research of nanostructured sensor’s durability in the field of ionizing radiation that also can induce structural changes in the LIB’s component materials, thus contributing to the elucidation of fundamental physicochemical processes; catalytic reactions or inhibitions of the chemical reactions on which the work of the sensors is based. A current method widely used in various fields, Direct Ink Writing (DIW), has been used to manufacture heterostructures of Al2O3/CuO and CuO:Fe2O3, followed by an additional ALD and thermal annealing step. The detection properties of these 3D-DIW printed heterostructures showed responses to 1,3-dioxolan (DOL), 1,2-dimethoxyethane (DME) vapors, as well as to typically used LIB electrolytes containing LiTFSI and LiNO3 salts in a mixture of DOL:DME, as well also to LiPF6 salts in a mixture of ethylene carbonate (EC) and dimethyl carbonate (DMC) at operating temperatures of 200 °C–350 °C with relatively high responses. The combination of the possibility to detect electrolyte vapors used in LIBs and size control by the 3D-DIW printing method makes these heterostructures extremely attractive in controlling the safety of batteries.

Bimetallic Pd/Sn-based Nanoparticles and their Catalytic Properties in the Semihydrogenation of Diphenylacetylene.

Multimetallic nanoparticles often enhance the catalytic performance of their monometallic counterparts by increasing reaction rates, catalyst selectivity, and/or stability. A prerequisite for understanding structure‐ and composition‐associated properties, however, is the careful design of multimetallic nanoparticles with various structures and compositions. Here, bimetallic Pd/Sn‐based nanoparticles are prepared with a tunable composition and structure exploiting ionic liquids (ILs) as reaction medium (i. e., methyltrioctylammonium bis(trifluoromethylsulfonyl)imide). The nanoparticles are obtained in a one‐pot synthetic procedure by reducing the metal salt precursors with triethylborohydride in the IL. The results show that the reaction parameters, in particular the nature and ratio of the Pd2+/Sn2+ precursors as well as the reaction temperature, influence NP formation and composition. X‐ray diffraction with Rietveld analysis and transmission electron microscopy are employed to determine NP size and phase composition. Under optimized reaction conditions Pd2Sn or PdSn nanocrystals are formed as single‐phase products after introducing an additional annealing step at 200 °C. Nanocrystals with intermetallic composition reveal enhanced catalytic properties in the semihydrogenation of diphenylacetylene which was used as a model reaction.

Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process

This work reports a method to reduce the process thermal budget in metal oxide (MO) thin-film transistors (TFTs). Using the thermal curing of a fluorinated polyimide planarization (PLN) layer as an efficient device activation process, this method eliminates the need for additional annealing steps before the existing PLN process in the fabrication. Bottom-gated TFTs with indium tin oxide (ITO)stabilized ZnO channels were fabricated by this method and exhibited improved electrical characteristics over control devices made with a higher thermal budget. A steep subthreshold swing of 82.8 mV/decade and a high on-off ratio of 1.3 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> were achieved. This improvement can be attributed to the fluorine diffusion from the PLN layer to the MO channels during the curing step. This method is useful for the cost-effective production of active-matrix flatpanel display (AM-FPD) panels and the implementation of MO TFTs on flexible substrates.

Ultra‐Thin Poly‐Si Layers: Passivation Quality, Utilization of Charge Carriers Generated in the Poly‐Si and Application on Screen‐Printed Double‐Side Contacted Polycrystalline Si on Oxide Cells

Herein, the various measures to improve the efficiency of large‐area screen‐printed double‐side contacted polycrystalline Si on oxide (POLO)‐cells are experimentally demonstrated. The short‐circuit current density Jsc increases by 0.6 mA cm−2 upon reducing the thickness of poly‐Si from 25 to 10 nm due to the reduction of the parasitic absorption in the poly‐Si layer at the textured front side of the cell. Additionally, it is shown for the first time that the minority carriers generated by light absorbed in the poly‐Si layer can at least partially be transferred into the crystalline Si base. Remarkably high implied open‐circuit voltage Voc,impl values are achieved with n‐type cell precursors by introducing an hydrogenation step by AlxOy after reducing the poly‐Si thickness, and by an additional annealing step after sputtering of transparent conductive oxides (TCOs). All cell precursors show Voc,impl values of up to 740 mV independent of the poly‐Si thickness. A reduction in the open‐circuit voltage Voc is observed during back‐end processing to 728 mV as measured on the final cells. A certified cell energy conversion efficiency of 22.3% is reported.

Low-Temperature Atomic Layer Deposited Magnesium Oxide as a Passivating Electron Contact for c-Si-Based Solar Cells

In this article, we explore magnesium oxide (MgO) as electron-selective contact layer in silicon heterojunction solar cells. We report on the successful deposition of MgO layers by atomic layer deposition at low temperatures ≤200 °C using bis(ethylcyclopentadienyl)magnesium (Mg(CpEt)2) and H2O as precursors. Depositions were carried out on bare crystalline silicon (c-Si) wafers and c-Si wafers with an intrinsic amorphous hydrogenated silicon (i-aSi:H) passivation layer. The resulting interfacial properties, surface passivation quality, and contact resistivity were investigated. Upon initial deposition of MgO on an i-aSi:H/c-Si stack, the c-Si surface passivation degrades drastically. However, with an additional annealing step of 5 min at 200–250 °C, it is possible to reverse the degradation and even to achieve charge carrier lifetimes in excess of those achieved with an i-aSi:H alone. Furthermore, we show that MgO forms an ohmic contact with both MgO/i-aSi:H/c-Si and MgO/c-Si stacks, and we demonstrate solar cells using both types of stacks as electron contact layers.

The effect of oxygen plasma treatment of gold electrodes on the molecular orientation of CuPc films

Gold (Au) is a commonly used material for many organic electronic device electrodes due to its chemical stability and high work function, which is required for p-type semiconductors. The orientation and morphology of organic semiconductors deposited on such electrodes often depends crucially on the cleanliness of the Au surface. In this study, we examine the effect of a common cleaning method, namely oxygen plasma cleaning, on sputter-deposited polycrystalline Au electrodes and subsequently deposited copper-(II)-phthalocyanine (CuPc) films. Using X-ray diffraction (XRD), atomic force microscopy (AFM) and near-edge X-ray absorption fine structure (NEXAFS) measurements, we show that the metastable Au oxide typically formed during an oxygen plasma cleaning process significantly impacts the molecular orientation and morphology in CuPc thin films, forcing molecules to adopt an upright orientation. We further demonstrate that the typical recumbent orientation of CuPc adopted on clean polycrystalline Au can be achieved by an additional annealing step after oxygen plasma treatment of the Au electrode that causes a decomposition of the gold oxide.