Simple p-channel poly-Si TFT (Thin Film Transistor) structure (PMOS 4mask structure) for AMLCD (active matrix liquid crystal display) was developed. Compared with a conventional PMOS 6mask process, two photo mask steps, passivation-hole mask and pixel mask, has been eliminated to create 4mask process. Both ELA (Eximer Laser Annealing) and SLS (Sequential Lateral Solidification) method were used for the formation of a poly-Si. By using PMOS 4mask process, 10.4-inch XGA (1024×768) AMLCD panel with integration of the gate-driver and demultiplexer was successfully realized.