Accumulation Region Research Articles

Indocyanine Green Conjugated Phototheranostic Nanoparticle for Photobiomodulation

Phototheranostics represents a highly promising paradigm for cancer therapy, although selecting an appropriate optical imager for clinical use remains challenging. We evaluated the phototheranostic nanoparticle-related properties of liposomally formulated phospholipid-conjugated indocyanine green, denoted as LP-iDOPE, for cancer diagnosis and treatment using photobiomodulation with a near-infrared (NIR)-light emitting diode (LED) light irradiator. Using in vivo NIR fluorescence imaging, we demonstrated that LP-iDOPE was selectively delivered to tumor sites with high accumulation and a long half-life. Following NIR-LED light irradiation of the tumor region of LP-iDOPE accumulation, effector CD8+ T cells were activated at the secondary lymphoid organs, migrated, and subsequently released cytokines including interferon-γ and tumor necrosis factor-α, resulting in effective tumor regression. Our cancer immunotherapy strategy using LP-iDOPE as a phototheranostic nanoparticle and an NIR-LED light irradiator as a photobiomodulation device represents a promising approach to noninvasive cancer therapy.

Sustainable provision of raw water based on the management of ecosystem services in small watersheds

The differentiated effects of the provision of environmental services in a watershed are due to the capacity of regularization of outflows in its mouth. In impacted areas, this environmental function is affected, and in some situations, it ceases to exist completely. This study characterized the soil and the production of sediments in anthropic watersheds, with the purpose of describing and evaluating the environmental services offered by a watershed undergoing anthropic transformation. The analyses show that the water flow in the remaining watersheds was preferably horizontal in the transmission zone, and these areas represent almost all areas. The values of hydraulic conductivity suggest that the infiltration decreases with soil depth; this fact is corroborated by the values of bulk density. The natural regions of water accumulation, the floodplains or outcrops zones, are small and do not have direct contact with the main floodplain present in the Guandu River Basin, making it impossible to recharge through other areas. Even so, water balance shows that the set of measures implemented ensured that the deficit water demand was supplied during the years of operation, even in times of water deficit. Likewise, the retention of solids in the settling tanks and in the drainage system prevented some 29,000 t of sediment from being carried between the years of 2012 and 2015.

Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures

Zinc-ferrite nanostructures were fabricated using ultrasonic-assisted-method. FE-SEM, EDX and XRD were utilized for the investigation of morphological and structural properties. Au/(ZnFe2O4-PVP)/n-Si MPS structures were prepared for the purpose of characterizing electrical and dielectric properties via impedance-spectroscopy-method (ISM) between -2 V and 5 V in the frequency range of 10 kHz-5MHz. The frequency-dependent values of electrical parameters such as VD, ND, EF, WD and ΦC-V were extracted from the reverse bias C−2-V. Voltage-dependent profiles of Rs and Nss was calculated using Nicollian-Brews and high-low frequency capacitance (CLF-CHF) methods. Results showed Nss is more effective are depletion and inversion whereas accumulation region is the region at which Rs is more effective. The real and imaginary parts of ε* and M* were calculated and showed strong dependence on frequency and voltage. The higher values of C, G/ω or ϵ', ϵ" at low frequencies and observed peak in the M″-V and (tanδ)-V were associated with Nss.

Genome relationships and LTR-retrotransposon diversity in three cultivated Capsicum L. (Solanaceae) species

BackgroundPlant genomes are rich in repetitive sequences, and transposable elements (TEs) are the most accumulated of them. This mobile fraction can be distinguished as Class I (retrotransposons) and Class II (transposons). Retrotransposons that are transposed using an intermediate RNA and that accumulate in a “copy-and-paste” manner were screened in three genomes of peppers (Solanaceae). The present study aimed to understand the genome relationships among Capsicum annuum, C. chinense, and C. baccatum, based on a comparative analysis of the function, diversity and chromosome distribution of TE lineages in the Capsicum karyotypes. Due to the great commercial importance of pepper in natura, as a spice or as an ornamental plant, these genomes have been widely sequenced, and all of the assemblies are available in the SolGenomics group. These sequences were used to compare all repetitive fractions from a cytogenomic point of view.ResultsThe qualification and quantification of LTR-retrotransposons (LTR-RT) families were contrasted with molecular cytogenetic data, and the results showed a strong genome similarity between C. annuum and C. chinense as compared to C. baccatum. The Gypsy superfamily is more abundant than Copia, especially for Tekay/Del lineage members, including a high representation in C. annuum and C. chinense. On the other hand, C. baccatum accumulates more Athila/Tat sequences. The FISH results showed retrotransposons differentially scattered along chromosomes, except for CRM lineage sequences, which mainly have a proximal accumulation associated with heterochromatin bands.ConclusionsThe results confirm a close genomic relationship between C. annuum and C. chinense in comparison to C. baccatum. Centromeric GC-rich bands may be associated with the accumulation regions of CRM elements, whereas terminal and subterminal AT- and GC-rich bands do not correspond to the accumulation of the retrotransposons in the three Capsicum species tested.

Granular Effects on Depositional Processes of Debris Avalanches

Debris avalanches generally have massive mobility and extensive deposited area, which have strong relation to the granular effect. The granular effect is an outcome from the interaction (based on frictional mechanism) among particles. Discrepancy of grain composition, for instance the difference of particle size and their proportion of particles, is a key factor to influence granular effect. A series of laboratory tests have been conducted to research the granular effects on depositional processes of debris avalanches containing fine- and coarse-grained particles. The velocity of debris front, the morphology characteristics and runout distance of the debris avalanche are considered in detail, and the mass parameter and the size parameter are introduced in analysis for the research of granular effect. The experimental results indicate that the granular effects can decrease the dissipation of momentum and increase the accumulation region, leading to further runout distance and more extensive deposited areas. Further, the velocity, the range of depositions of debris avalanches are larger than that in other conditions when the proportion of fine-grained particles is 30%, especially the materials consist of heterogeneous granular. It means there have a critical mass parameter in experiments which lead to the high efficiency of granular effects, and the granular effect is weakening in homogeneous granular composition.

Effect of Affinity Discontinuity on Heterojunction p-i-n Solar Cell Performance

Effect of the band alignment on the performance of heterojunction p-i-n solar cell is investigated in the framework of one-dimensional transport model. An affinity-based approach is introduced in order to identify a set of material parameters and doping levels which would result in lower series resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> , higher open-circuit voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> , and higher fill factor FF. The search reveals key ingredients of the nongraded heterojunction optimized design, whose efficiency can be as high as 27%. On one hand, certain band alignment determined by affinity-related quantities has to be observed to ensure the case of staggered gaps, once the dimensional requirements in the absorber and in the charge collectors are met. On the other hand, an affinity-based constraint is shown to control the potential profile which mitigates the adverse effect of barriers and accumulation regions at the junction interfaces. The constraint is shown to result in lower R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> and, thus, higher FF. Analytical approach reveals a whole region in the affinity space where the reverse saturation current J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> is at minimum, which also strongly overlaps with the constraints pinning down R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sub> . It is concluded that the performance figures are featured with shallow minima as functionals in roughly same region of the affinity space, where those numbers are relatively stable versus changes in the band alignment. The findings aim to make material screening more feasible and widens significantly the options in the design of new p-i-n cells.

The piezotronic effect in InGaN/GaN quantum-well based microwire for ultrasensitive strain sensor

By introducing external mechanical strain, the carriers transport of certain semiconductors with non-centrosymmetric structure would be modulated, which is referred to the piezotronic effect. Herein, a piezotronic strain sensor with ultrahigh sensitivity based on InGaN/GaN multiple quantum-well heterojunction microwire (MQWH-MW) was designed. The InGaN/GaN MQWH-MW orientated along a-axis was directly obtained by conductivity-selective electronchemical (EC) etching of epitaxial film on sapphire. The strain sensor was fabricated into a back-to-back Schottky junction. The gauge factor of the fabricated strain sensor reaches over 2000 when applying 0.55% tensile strain under +0.4 V external bias. A theoretical analysis of energy band in the MQWH-MW based strain sensor is proposed to explain the observed result. Theoretical simulations about conduction band energy profiles and electron concentration of electron accumulation region (EAR) are performed and presented to systematically illustrate and confirm the proposed working mechanisms. This work demonstrates a promising approach to design and fabricate strain nanosensors with high sensitivety.

MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion.

In this paper, we report the plasma-enhanced atomic layer deposition (PEALD) of TiO2 and TiO2/Al2O3 nanolaminate films on p-Si(100) to fabricate metal-oxide-semiconductor (MOS) capacitors. In the PEALD process, we used titanium tetraisopropoxide (TTIP) as a titanium precursor, trimethyl aluminum (TMA) as an aluminum precursor and O2 plasma as an oxidant, keeping the process temperature at 250 °C. The effects of PEALD process parameters, such as RF power, substrate exposure mode (direct or remote plasma exposure) and Al2O3 partial-monolayer insertion (generating a nanolaminate structure) on the physical and chemical properties of the TiO2 films were investigated by Rutherford backscattering spectroscopy (RBS), Raman spectroscopy, grazing incidence X-ray diffraction (GIXRD), and field emission scanning electron microscopy (FESEM) techniques. The MOS capacitor structures were fabricated by evaporation of Al gates through mechanical mask on PEALD TiO2 thin film, followed by evaporation of an Al layer on the back side of the Si substrate. The capacitors were characterized by current density-voltage (J-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Our results indicate that RF power and exposure mode promoted significant modifications on the characteristics of the PEALD TiO2 films, while the insertion of Al2O3 partial monolayers allows the synthesis of TiO2/Al2O3 nanolaminate with well-spaced crystalline TiO2 grains in an amorphous structure. The electrical characterization of the MOS structures evidenced a significant leakage current in the accumulation region in the PEALD TiO2 films, which could be reduced by the addition of partial-monolayers of Al2O3 in the bulk of TiO2 films or by reducing RF power.

SO2 measurements in a clean coastal environment of the southwestern Europe: Sources, transport and influence in the formation of secondary aerosols.

Two years of SO2 measurements at El Arenosillo observatory located in the Gulf of Cadiz (Atlantic Ocean) were investigated. Annual hourly averages of 1.9±1.5μgm-3 and p95 between 3 and 4.4μgm-3 were recorded, showing clean and background environments. Monthly means vary between 1.5 and 2.4μgm-3, a monthly evolution was not found. SO2 fields from the MERRA2 model were used to identify SO2 sources and its transport, which could be affecting the studied region. Although SO2 records were low, major conductive for SO2 increases were observed in specific periods. A selection methodology was applied to extract these events, which showed a mean of ~11μgm-3. Surface meteorological observations and ERA5 meteorological fields from the ECMWF model were used to assess the weather conditions. SO2 increases, in cold months occurred under conditions governed by synoptic-scale. Two types of transport scenarios were identified: SO2 transport defined as direct impact, which is the sum of the plumes from Portugal and the Huelva area; and indirect impact, where SO2 and sulphate particle emissions from Portugal were transported and accumulated in the Gulf of Cadiz and then carried inland, where new particle formation were observed. Episodes with high SO2 concentrations were also reported in warm periods associated with pure sea-land breezes. The SO2 peaks under sea-land breezes were associated with the transport of SO2 from the south of Portugal to the Gulf of Cadiz, whereas SO2 from the east of the Iberian Peninsula and north of Africa reached the Mediterranean Sea and were then transported to the Atlantic Ocean following the Strait of Gibraltar. Blocking of the airflows from the Mediterranean Sea to the Atlantic Ocean turns the Gulf of Cadiz into a chemical reservoir, where chemical species such as SO2 can accumulate, triggering new particle formation processes.

Influence of Barotropic Tidal Currents on Transport and Accumulation of Floating Microplastics in the Global Open Ocean.

Floating plastic debris is an increasing source of pollution in the world's oceans. Numerical simulations using models of ocean currents give insight into the transport and distribution of microplastics in the oceans, but most simulations do not account for the oscillating flow caused by global barotropic tides. Here, we investigate the influence of barotropic tidal currents on the transport and accumulation of floating microplastics, by numerically simulating the advection of virtual plastic particles released all over the world's oceans and tracking these for 13 years. We use geostrophic and surface Ekman currents from GlobCurrent and the currents caused by the four main tidal constituents (M 2, S 2, K 1, and O 1) from the FES model. We analyze the differences between the simulations with and without the barotropic tidal currents included, focusing on the open ocean. In each of the simulations, we see that microplastic accumulates in regions in the subtropical gyres, which is in agreement with observations. The formation and location of these accumulation regions remain unaffected by the barotropic tidal currents. However, there are a number of coastal regions where we see differences when the barotropic tidal currents are included. Due to uncertainties of the model in coastal regions, further investigation is required in order to draw conclusions in these areas. Our results suggest that, in the global open ocean, barotropic tidal currents have little impact on the transport and accumulation of floating microplastic and can thus be neglected in simulations aimed at studying microplastic transport in the open ocean.

Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage

In this study, Al/Al2O3/p-Si (MIS) type structures were fabricated and then the effects of Al2O3 interlayer on the electrical characteristics have been investigated at room temperature. For this purpose, capacitance/conductance-voltage-frequency (C/G-V-f) measurements were performed in the wide range frequency (1kHz-5 MHz) and voltage (±3 V) to get more reliable and accuracy results on the barrier height (BH) formation at Al/p-Si interface, conduction mechanisms, and main electrical parameters. Experimental results indicate that C and G/ω values are strong function of frequency and voltage particularly in the regions of accumulation and depletion. Calculating from the interception and slope of C−2-V plot, the doping acceptor atoms (NA), BH and depletion layer width (WD) were obtained for each frequency, respectively. Both BH and WD values exponentially increase by frequency increment. Nicollian-Brews method were used to extract voltage dependence profiles of Rs and frequency from C and G data.

Релаксация тока в монокристаллах TlGa-=SUB=-1-x-=/SUB=-Dy-=SUB=-x-=/SUB=-Se-=SUB=-2-=/SUB=- (x=0.01; 0.03)

Abstract The low-temperature relaxation processes in TlGa_1 – _ x Dy_ x Se_2 ( x = 0.01, 0.03) single crystals have been studied experimentally. The physical parameters which characterize the electron processes in Ag–TlGa_1 – _ x Dy_ x Se_2–Ag samples have been determined using the estafette transfer mechanism of the charge formed at deep traps due to the carrier injection from a contact: the effective mobility of the charge transferred due to deep centers, the sample contact capacity, the region of accumulation of the charge in the samples, the contact charging constant, and the flight time of charge carriers through the sample.

Role of the Interface between Ag and ZnO in the Electric Conductivity of Ag Nanoparticle-Embedded ZnO.

The addition of Ag nanoparticles (Ag NPs) with an average size of 30 nm into ZnO increases the electric conductivity up to 1000 times. While a similar increase in the conductivity is observed in a mixture of Ag nanoparticles and Al-doped ZnO (AZO) films, a physical mechanism underlying the change in electric conductivity is not the same for Ag NP-added ZnO and Ag NP-added AZO. In Ag NP-added ZnO, an ohmic junction is formed at the ZnO-Ag interface, and electrons are accumulated in ZnO near the ZnO-Ag interface until electron-rich islands are connected. However, in Ag NP-added AZO, electrons in Ag NPs move to the AZO matrix via thermionic emission and travel through the AZO matrix. This change in electron transport at ZnO-Ag and AZO-Ag interfaces is due to the fact that the work function of ZnO (4.62 eV) is larger than those of Ag (4.24 eV) and AZO (4.15 eV). An increase in Ag NP content in the ZnO matrix leads to the overlap of the electron accumulation regions and forms a percolation path for the electron transport without deteriorating the electron mobility. Hence, the electron concentration increases to 2.4 × 1020/cm3 in the 1.4 vol % Ag NP-added ZnO film. In addition, Ag NPs have a negligible effect on the transmittance, and the best Haacke figure of merit (ΦH) values are 2.86 and 5.18 for ZnO:Ag NP and AZO:Ag NP, respectively.

High altitude accumulation and preserved climate information in the western Pamir, observations from the Fedchenko Glacier accumulation basin

AbstractThe accumulation region of Fedchenko Glacier represents an extensive snow reservoir in the Pamir Mountains feeding the longest glacier in Central Asia. Observed elevation changes indicate a continuous ice loss in the ablation region of Fedchenko Glacier since 1928, while the mass balance of the accumulation region is largely unknown. In this study, we show that accumulation varies considerably in the main accumulation basin, with accumulation rates up to 2400 mm w.e. a−1in the West, decreasing to &lt;1000 mm w.e. a−1in the center, although the elevation difference is &lt;200 m. The combination of snow/firn samples and ground-penetrating radar profiles suggests that this accumulation pattern is persistent during the recent past. The recent accumulation history is reconstructed from internal radar reflectors using a firn densification model and shows strong interannual variations, but near constant mean values since 2002. Modeling of trajectories, based on accumulation and glacier geometry, results in an estimate of the depth/age relation close to the main divide. This region provides one of the most suitable locations for retrieving climate information with temporal high resolution for the last millennium, with a potential to cover most of the Holocene in less detail.

Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs

Effects of junction profiles in bottom protection p-well (BPW) on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs were investigated using simulation methods. Breakdown mechanisms of BPW in the device were also elucidated by energy-band diagram and electric-field distribution across trench-gate. Monte Carlo Al-implantation simulation on the trench structure for BPW formation was carried out with variations in peak depth (DBPW), concentration (NBPW), and thickness of SiO2 spacer (Tspacer) on trench sidewall. The SiC trench-gate MOSFETs with deep DBPW, high NBPW, and thin Tspacer are suitable for high drain voltage due to a shielded trench gate by BPW. However, specific on-resistance (Ron,sp) increased because of laterally penetrated Al into p-base and accumulation regions during ion implantation for BPW formation. In case of shallow DBPW, low NBPW, and thick Tspacer, however, the gate oxide at trench bottom corner is considerably vulnerable to the dielectric breakdown due to fully depleted BPW near trench bottom corner and electric-field crowding at gate oxide.

Frequency and voltage dependent electrical properties of YMn0.90Os0.10O3 thin film on the SiO2/p-Si substrate

The YMn0.90Os0.10O3 (YMOO) thin film was deposited on the SiO2/p-Si substrate via using radio frequency (rf) magnetron sputter method. Voltage dependent electrical properties of the Al/YMOO/SiO2/p-Si/Al structure were investigated at various frequency and ambient condition. Capacitance-voltage (C-V) measurements showed that the capacitance has an accumulation region at positive or forward bias region. Conductance-voltage (G-V) characteristics of the device displayed that the G increases with increasing frequency. Series resistance, Rs, of the device was derived from C-V and G-V measurements and the Rs-V characteristic exhibited strongly frequency dependency. Frequency dependent interface state density, Nss, was calculated according to the Hill-Coleman relation, which decreases as frequency increases. The corrected capacitance (Cc) and conductance (Gc) results revealed that the effect of series resistance on the electrical properties cannot be ignored.

Bipolar Analog Memristive Switching of In2O3 Using Al Nanoparticles

Aluminum nanoparticles (AlNPs) were embedded into a sol-gel synthesized In₂O₃ thin film by using a combination of thermal evaporation and glancing Angle Deposition technique. Presence of different sizes of aluminum nanoparticles was confirmed from field emission gun scanning electron microscopy. The high-resolution X-ray diffraction confirms the formation of Al₂O₃ NPs by surface oxidation of aluminum nanoparticles. Embedded Metal-Oxide-Semiconductor like device Al/In₂O₃/AlNPs/In₂O₃/p-Si was fabricated, and its memristor behavior was analyzed. The Al/In₂O₃/AlNPs/In₂O₃/p-Si device possessed high current conduction and analog resistive switching as compared to Al/In₂O₃/p-Si device. Significant and consistent memory window up to 150 current (I)-voltage (V) loop was obtained for Al/In₂O₃/AlNPs/In₂O₃/p-Si device between ±6 V applied bias. The Al/In₂O₃/AlNPs/In₂O₃/p-Si device measured high free carrier concentration, i.e., (Nd)~1.93 × 1020 cm-3 calculated from capacitance (C)-Voltage (V) measurement. The memory was retained in accumulation and depletion regions as obtained from the C-V looping curves.

The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

Au/PPy/n-Si (MPS) type SBDs were fabricated and their electrical characteristics were investigated in the temperature range of 140-340 K at 100 and 500 kHz frequencies by using analyzed the C-V measurements. The C-V plots have inversion, depletion and accumulation regions for each temperature. The value of C increases with increasing temperature almost as exponentially in inversion and depletion regions. The reverse bias C-2 vs V plots show a linear behavior in the wide range bias voltage and so the values of doping atoms (ND), Fermi energy (EF), diffusion potential (Vd), and barrier height (B(C-V)) were obtained from intercepts and slopes of these plots for each temperature and frequency. While the EF increases with increasing temperature, B decreases as linearly. The l values of B(C-V) range from 0.703 eV at 140 K to 0.161 eV at 340 K for 100 kHz and 0.810 eV at 140 K to 0.391 eV at 340 K for 500 kHz, respectively. The electrical conductivity (ac) increases as exponential with temperature. The activation energy (Ea) values were found as 30.8 meV from the slope Ln(ac)-q/kT plot. These results implied that electrical characteristics of the SBDs are quite function of temperature at low frequencies and temperatures.

Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz

In this study, Re/n-GaAs with a native oxide layer based on metal–semiconductor (MS) structures were produced and then, the capacitance–voltage–temperature (C–V–T) and the conductance–voltage–temperature (G/ω–V–T) data of them were obtained in the frequency ranged 50 kHz to 5 MHz. Using the raw data, the electronic parameters was calculated by the developed LabVIEW-based program. Methodologically, the series resistance (Rs) values were calculated from the measured capacitance (Cm) and conductivity (Gm) values, while the interface state (Nss) values were obtained from using the combined high (CHF)–low (CLF) frequency capacitance method by Nicollian and Brews. Experimentally, the C values increased with a decreasing frequency, while decreased with increasing temperatures in the depletion and accumulation regions. On the other hand, G/ω values decreased with increasing frequency in forward and reverse bias regions. It can be attributed that, the C and the G/ω values are quite affected by the presence of the Rs and the Nss in the forbidden energy gap and a native oxide layer between M and S. The Rs–V–T curves have especially peaks in accumulation and depletion regions at low frequency values, whereas these peaks decreased at high frequencies. In addition, the Nss–V–T curves give peaks in the range of − 0.1 V to 0.7 V at variable temperatures and the Nss values decrease with increasing temperature and shift towards negative bias regions. Experimental results indicate that the Rs and Nss are important parameters and so, these parameters must be considered in sensor applications based on Re/n-GaAs structures.

Totten Glacier subglacial hydrology determined from geophysics and modeling

Aurora Subglacial Basin (ASB), which feeds Totten Glacier, is a marine basin lying below sea level and contains up to 3.5m of global sea level equivalent. Rates of future sea level rise from this area are primarily dependent on the stability of Totten Ice Shelf and the controls on ice flow dynamics upstream of the grounding line, both of which may be influenced by subglacial hydrology. We apply the GlaDS subglacial hydrology model to ASB to examine whether the spatial patterns of distributed and efficient drainage systems impact the dynamics of Totten Glacier. We determine the most appropriate model configuration from our series of sensitivity tests by comparing the modeled basal water pressure and water depth results with specularity content data. Those data are derived from ICECAP radar surveys over the same region and represent regions of basal water accumulation. The best match between simulated basal hydrology properties and specularity content shows a strong correspondence in regions of distributed water in the ASB troughs for both water depth and water pressure, but weak correspondence between water depth and specularity content near the grounding line. This may be due to the presence of several large channels draining over the grounding line into the head of Totten Ice Shelf, which are likely not as well represented in the specularity content data as distributed systems. These channels may have a significant impact on melt, and therefore the stability, of Totten Ice Shelf. Within ASB, regions of high water pressure and greater water accumulation correspond well with regions of faster ice flow, suggesting some control of basal hydrology on ice dynamics in this region.