Abstract
Aluminum nanoparticles (AlNPs) were embedded into a sol-gel synthesized In₂O₃ thin film by using a combination of thermal evaporation and glancing Angle Deposition technique. Presence of different sizes of aluminum nanoparticles was confirmed from field emission gun scanning electron microscopy. The high-resolution X-ray diffraction confirms the formation of Al₂O₃ NPs by surface oxidation of aluminum nanoparticles. Embedded Metal-Oxide-Semiconductor like device Al/In₂O₃/AlNPs/In₂O₃/p-Si was fabricated, and its memristor behavior was analyzed. The Al/In₂O₃/AlNPs/In₂O₃/p-Si device possessed high current conduction and analog resistive switching as compared to Al/In₂O₃/p-Si device. Significant and consistent memory window up to 150 current (I)-voltage (V) loop was obtained for Al/In₂O₃/AlNPs/In₂O₃/p-Si device between ±6 V applied bias. The Al/In₂O₃/AlNPs/In₂O₃/p-Si device measured high free carrier concentration, i.e., (Nd)~1.93 × 1020 cm-3 calculated from capacitance (C)-Voltage (V) measurement. The memory was retained in accumulation and depletion regions as obtained from the C-V looping curves.
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