Access Gate Research Articles

Rights Protection and Constitutional Justice: Some Comparative Reflections

Many of the symposium's papers rightly focus on the access gates (elements such as standing, costs, amicus curiae) that enable or prevent individuals from litigating, or the process gates (such as the issuance of advisory opinions) that shape the form of justice that may or may not come from courts. This paper takes the liberty of not comparing Australia's access and process gates to those in other countries. Rather, it focuses on the implements available to litigants and judges to promote constitutional justice once access to the judicial system is secured. In this light, accessing constitutional justice concerns more than simply getting into the system. It also concerns what sort of justice litigants may contest and what sort of justice the courts can provide. This varies cross-nationally, based, in part, on how judicial power is allocated and how legal and political rights are protected in the constitutional system. The simple point is that the justice one can access or secure depends to some extent on what is or is not included in the constitutional system.

Pinning and switching of magnetic moments in bilayer graphene

We examine the magnetic properties of the localized states induced by lattice vacancies in bilayer graphene with an unrestricted Hartree–Fock calculation. We show that, with realistic values of the parameters and for experimentally accessible gate voltages, we can have magnetic switching between an unpolarized and a fully polarized system.

Probing populations of red giants in the galactic disk with CoRoT

The detection with CoRoT of solar-like oscillations in nearly 800 red giants in the first 150-days long observational run paves the way for detailed studies of populations of galactic-disk red giants. We investigate which information on the observed population can be recovered by the distribution of the observed seismic constraints: the frequency of maximum oscillation power (nu_max) and the large frequency separation (Deltanu). We propose to use the observed distribution of nu_max and of Deltanu as a tool for investigating the properties of galactic red-giant stars through comparison with simulated distributions based on synthetic stellar populations. We can clearly identify the bulk of the red giants observed by CoRoT as red-clump stars, i.e. post-flash core-He-burning stars. The distribution of nu_max and of Deltanu gives us access to the distribution of the stellar radius and mass, and thus represent a most promising probe of the age and star formation rate of the disk, and of the mass-loss rate during the red-giant branch. CoRoT observations are supplying seismic constraints for the most populated class of He-burning stars in the galactic disk. This opens a new access gate to probing the properties of red-giant stars that, coupled with classical observations, promises to extend our knowledge of these advanced phases of stellar evolution and to add relevant constraints to models of composite stellar populations in the Galaxy.

Identification of a Gatekeeper Residue That Prevents Dehydrogenases from Acting as Oxidases

The oxygen reactivity of flavoproteins is poorly understood. Here we show that a single Ala to Gly substitution in l-galactono-gamma-lactone dehydrogenase (GALDH) turns the enzyme into a catalytically competent oxidase. GALDH is an aldonolactone oxidoreductase with a vanillyl-alcohol oxidase (VAO) fold. We found that nearly all oxidases in the VAO family contain either a Gly or a Pro at a structurally conserved position near the C4a locus of the isoalloxazine moiety of the flavin, whereas dehydrogenases prefer another residue at this position. Mutation of the corresponding residue in GALDH (Ala-113 --> Gly) resulted in a striking 400-fold increase in oxygen reactivity, whereas the cytochrome c reductase activity is retained. The activity of the A113G variant shows a linear dependence on oxygen concentration (k(ox) = 3.5 x 10(5) m(-1) s(-1)), similar to most other flavoprotein oxidases. The Ala-113 --> Gly replacement does not change the reduction potential of the flavin but creates space for molecular oxygen to react with the reduced flavin. In the wild-type enzyme, Ala-113 acts as a gatekeeper, preventing oxygen from accessing the isoalloxazine nucleus. The presence of such an oxygen access gate seems to be a key factor for the prevention of oxidase activity within the VAO family and is absent in members that act as oxidases.

Review of noise in neonatal intensive care units – regional analysis

This work is about the problem of noise in neonatal incubators and in the environment in the neonatal intensive care units. Its main objective is to analyse the impact of noise in hospitals of Mendoza and La Rioja.Methodology: The measures were taken in different moments in front of higher or lower severity level in the working environment. It is shown that noise produces severe damages and changes in the behaviour and the psychological status of the new born babies.Results: The noise recorded inside the incubators and the neonatal intensive care units together have many components but the noise of motors, opening and closing of access gates have been considered the most important ones. Values above 60 db and and up to 120 db in some cases were recorded, so the need to train the health staff in order to manage the new born babies, the equipment and the instruments associated with them very carefully is revealed.

50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node

Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date. In addition, more recent research has begun to focus on reducing the parasitic device elements such as access resistance and gate fringing capacitance, which become crucial for short gate length device performance maximization. Adopting a self-aligned T-gate architecture is one method used to reduce parasitic device access resistance, but at the cost of increasing parasitic gate fringing capacitances. As the device gate length is then reduced, the benefits of the self-aligned gate process come into question, as at these ultrashort-gate dimensions, the magnitude of the static fringing capacitances will have a greater impact on performance. To better understand the influence of these issues on the dc and RF performance of short gate length InP pHEMTs, the authors present a comparison between In0.7Ga0.3As channel 50-nm self-aligned and standard T-gate devices. Figures of merit for these devices include transconductance greater than 1.9 S/mm, drive current in the range 1.4 A/mm, and fT up to 490 GHz. Simulation of the parasitic capacitances associated with the self-aligned gate structure then leads a discussion concerning the realistic benefits of incorporating the self-aligned gate process into a sub-50-nm HEMT system

Optimization of Embedded Compact Nonvolatile Memories for Sub-100-nm CMOS Generations

The performance of compact nonvolatile memory cells, meant for embedded applications in advanced CMOS processes, is studied and analyzed in detail by means of technology computer-aided design (TCAD), and new experimental results are presented. Improvement of the memory performance is achieved. The key element of this improvement is access gate oxide thickness reduction combined with suitable design of the channel/source/drain doping profiles. An increase of the memory readout current by a factor of two was achieved with an excellent low-leakage current level of the access gate transistor. The increase of the read current allows faster read access, while the excellent subthreshold behavior of the access gate transistor allows aggressive scaling of the access gate length down to 160 nm. A gate voltage as low as 1 V can be used for reading the cell, so there is no need for voltage boosting. The source-side injection programming speed is increased by one order of magnitude for devices with thin access gate oxide. The compact cell is suited for embedded applications in sub-100-nm CMOS generations.

Valley splitting control inSiO2/Si/SiO2quantum wells in the quantum Hall regime

${\mathrm{SiO}}_{2}/{\mathrm{S}\mathrm{i}/\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ quantum wells fabricated on SIMOX silicon-on-insulator substrates are examined in the quantized Hall regime. An 8 nm quantum well behaves as a single layer of two-dimensional electrons at accessible gate voltages. By using front and back gates, the wave function in the confinement direction can be shifted continuously between two ${\mathrm{SiO}}_{2}/\mathrm{Si}$ interfaces formed through different processes. We find that this results in a continuous evolution of the valley splitting which is asymmetric with electrical gate bias. Wider quantum wells show bilayer behavior where the valley splitting is different in each layer, demonstrating that its control shown by the 8 nm well arises due to the different properties of the two interfaces. Estimates of the valley splitting are made through Landau level coincidences and activation energies. The coincidence between Landau levels of opposite spin, opposite valley, and like cyclotron indices at $\ensuremath{\nu}=6$ shows anticrossing behavior.

A silicon bi-layer system

This report concerns front and back-gated SiO 2/Si/SiO 2 quantum wells formed by fabricating MOSFET's on (1 0 0) SIMOX silicon-on-insulator substrates. By examining the magneto-transport properties of samples with various well-widths, we demonstrate that such structures are suitable for investigating correlation effects under various regimes of behaviour. We find that an 8 nm quantum well behaves as a single layer of two-dimensional electrons at accessible gate voltages. We present convincing evidence that the back-gate provides unique control over the valley splitting unavailable in conventional Si MOSFET's by shifting the wave function between the two Si/SiO 2 interfaces, as first suggested by Ouisse et al. (Physica B 249–251 (1998) 731). A slightly wider 10 nm quantum well behaves as a strongly-coupled bi-layer system, where the valley splitting is different in each layer. A very wide 25 nm -wide quantum well behaves as two totally independent two-dimensional electron layers.

Emotional reactions to learning in cattle

It has been suggested that during instrumental learning, animals are likely to react emotionally to the reinforcer. They may in addition react emotionally to their own achievements. These reactions are of interest with regard to the animals’ capacity for self-awareness. Therefore, we devised a yoked control experiment involving the acquisition of an operant task. We aimed to identify the emotional reactions of young cattle to their own learning and to separate these from reactions to a food reward. Twelve Holstein–Friesian heifers aged 7–12 months were divided into two groups. Heifers in the experimental group were conditioned over a 14-day period to press a panel in order to open a gate for access to a food reward. For heifers in the control group, the gate opened after a delay equal to their matched partner’s latency to open it. To allow for observation of the heifers’ movements during locomotion after the gate had opened, there was a 15 m distance in the form of a race from the gate to the food trough. The heart rate of the heifers, and their behaviour when moving along the race towards the food reward were measured. When experimental heifers made clear improvements in learning, they were more likely than on other occasions to have higher heart rates and tended to move more vigorously along the race in comparison with their controls. This experiment found some, albeit inconclusive, indication that cattle may react emotionally to their own learning improvement.

Thickness dependence of leakage currents in high-permittivity thin films

The leakage current through high-permittivity perovskite thin films in the nanometer range is of great technological interest because of the possible applications of these insulating films in future submicroelectronic devices such as dielectrics in Gbit dynamic random access memories or gate oxides in metal–oxide–semiconductor field-effect transistors. The experimental result of decreasing leakage current with decreasing thickness of the dielectric for the same externally applied field can be described by using a model combining thermionic emission at the electrode/dielectric interface and a low-mobility, high-permittivity dielectric with low-permittivity layers at the interfaces, the so-called dead layers.

Bahrain issues biometric smart ID card tender

The Kingdom of Bahrain is planning a new national ID card based on multi-application smart cards, PKI and biometrics. The country’s Central Informatics Organisation has issued a ‘request for tender’ that highlights the extent of the ambitious project. The card may be used as a driving licence, for health data, for immigration and as an e-purse, as well as for ID. It can also be used for fast tracking through Bahrain International Airport, using fingerprint technology to authenticate passengers at two dedicated access gates (one in arrivals, one in departures). This is a short news story only. Visit www.compseconline.com for the latest computer security news.

Packing Interactions between Transmembrane Helices Alter Ion Selectivity of the Yeast Golgi Ca2+/Mn2+-ATPase PMR1

PMR1 is the yeast secretory pathway pump responsible for high affinity transport of Mn2+ and Ca2+ into the Golgi, where these ions are sequestered and effectively removed from the cytoplasm. Phenotypic growth assays allow for convenient screening of side chains important for Ca2+ and Mn2+ transport. Earlier we demonstrated that mutant Q783A at the cytoplasmic interface of M6 could transport Ca2+, but not Mn2+. Scanning mutagenesis of side chains proximal to residue Gln-783 in membrane helices M2, M4, M5, and M6 revealed additional residues near the cytoplasmic interface, notably Leu-341 (M5), Phe-738 (M5), and Leu-785 (M6) that are sensitive to substitution. Importantly, we obtained evidence for a packing interaction between Val-335 in M4 and Gln-783 in M6 that is critical for Mn2+ transport. Thus, mutant V335G mimics the Mn2+ transport defect of Q783A and mutant V335I can effectively suppress the Mn2+-defective phenotype of Q783A. These changes in ion selectivity were confirmed by cation-dependent ATP hydrolysis using purified enzyme. Other substitutions at these sites are tolerated individually, but not in combination. Exchange of side chains at 335 and 783 also results in ion selectivity defects, suggesting that the packing interaction may be conformation-sensitive. Homology models of M4, M5, and M6 of PMR1 have been generated, based on the structures of the sarcoplasmic reticulum Ca2+-ATPase. The models are supported by data from mutagenesis and reveal that Gln-783 and Val-335 show conformation-sensitive packing at the cytoplasmic interface. We suggest that this region may constitute a gate for access of Mn2+ ions.

Optimal layout for 6H–SiC VJFET controlled current limiting device

SiC-based devices are very suitable for high current and high voltage applications [H. Matsunami, Progress in wide bandgap semiconductor SiC for power devices, Invited Paper, ISPSD'00 22–25 May 2000, Toulouse]. Nevertheless, SiC material has some limitations that constrain the capability of these devices. This work is devoted to the design and fabrication of a new etched VJFET, which implements both gate and source in buried layers. This technological approach enables more flexibility in the basic cell layout design (square cells) than the conventional surface gate implementation. Therefore, various geometrical layouts have been investigated in order to find a trade-off between current density, driving ability and current limiting capability. The minimum lithography feature, reactive ion etching and the minimum spacing between adjacent implantations were key points in setting-up the design rules. I– V curves of the designed structures for a gate-to-source bias of 0 and −30 V has been performed at room temperature. All devices exhibit a current saturation at an on-state voltage higher than 10 V. The dependence of the internal access gate resistance on the layout has been checked by means of transconductance measurements. Transconductance has been estimated for each type of structure, being in the range of 57.8–672 mS/mm. Nevertheless, a new figure of merit (the transconductance per active area) allows to find out the most suitable layout in terms of output current density and gate resistance. A comparison in terms of current and transconductance per source gives the best solution in terms of output saturation current and gate resistance. The results of those measurements are discussed with future perspectives for implementation of the most appropriated layout in an integrated system.

Compact poly-CMP embedded flash memory

In this paper, the compact poly-CMP cell concept is presented as a good candidate for scaled embedded flash memory in future mainstream CMOS technologies. In this compact cell concept the access gate is placed next to the stacked gate transistor. The access gate has a flat top surface due to the use of chemical mechanical polishing (CMP) and therefore no depth of focus problems with the exposure of the access gate mask occur. The feasibility is proven by electrical results on mini arrays in 0.25-μm CMOS technology. Both Fowler–Nordheim tunneling and source side injection programming is possible. The program and erase degradation is investigated by endurance cycling.

The storm over our heads: The rendering of legal services by audit firms in Spain

In the last few years the legal profession in Spain has been in turmoil. The market for legal services has undergone profound changes and the profession has done its utmost to adapt to client’s new demands, modernising ® rms and improving the quality of the services rendered. Besides, the Spanish market for legal services is growing at a rate 20% higher than other European markets. The needs of clients have placed two challenges before Spanish attorneys and these have forced law ® rms into two diVerent forms of association. The ® rst has to do with globalisation. Business has grown transnationally and lawyers have had to attend client’s demands of legal services in other countries. This has lead Spanish law ® rms to increase their size and also to many kinds of international alliances and networks formed by several ® rms from diVerent countries. There are some instances of Spanish law ® rms trying to extend their services into other countries, by establishing a branch oYce or by taking over a foreign ® rm. This worldwide phenomenon aVects the legal professions of all countries, which ® nd themselves in ® erce competition for clients. In the case of Spain, however, the pressure and competition by foreign law ® rms has been more relevant due to two important factors. First, the increasing competition by foreign attorneys within the single European market. Secondly, the Spanish legal market is seen by many foreign ® rms as the access gate to the South American legal market. The ® rst challenge is therefore about competition among law ® rms in an increasingly integrated worldwide market for legal services (intraprofessional competition). The second challenge is related to multidisciplinary services and the rendering of non-legal services by law ® rms or the rendering of legal services by non-law ® rms. Law ® rms, consulting and auditing ® rms are becoming multi-product ® rms. In this case, law ® rms’ competition is not directly with other law ® rms but with other professionals, mainly audit and consulting ® rms (interprofessional competition).

Monoclonal antibody to phosphatidylserine inhibits Na +/K +-ATPase activity

A monoclonal IgG, directed to phosphatidylserine (PS1G3), partially (40–50%) inhibited Na +/K +-ATPase activity (forward running reaction cycle) without affecting the K 0.5 values for Na +, K + and MgATP. The Hill or interaction coefficients ( n H ) for Na + and K + for this reaction were reduced from 3.0 to 1.6 and from 1.6 to 0.8, respectively. The K +-stimulated p- nitrophenylphosphatase activity ( p- NPPase ), which is a partial reaction sequence of the Na +/K +-ATPase system (but in the backward running mode), was inhibited more strongly (about 70%) due to an increase in K +/substrate antagonism. In this system K 0.5 and n H values for both p- nitrophenyl phosphate (p- NPP) and K + were increased by the mAb. At the maximally inhibitory concentration of PS1G3 the V max of the p- NPPase was also reduced. Partial reactions, which were inhibited by PS1G3, are: (1) the Na +-activated phosphorylation (non-competitive vs. Na +), (2) the Rb + occlusion (competitive vs. Rb +). Partial reactions not harmed by PS1G3 are: (3) the K +-dependent dephosphorylation, (4) the K +-dependent E 1 + K + ⇌ E 2K transition. We conclude that PtdSer is involved in cation occlusion, possibly by forming part of the access gate.

REVIEWS

Journal Article REVIEWS Get access GATE FEVER. By JANE BUXTON and MARGARET TURNER. [London: The Cresset Press. 1962. 198 pp. Illus. 21s.] Barbara Smoker Barbara Smoker Search for other works by this author on: Oxford Academic Google Scholar The British Journal of Criminology, Volume 3, Issue 2, October 1962, Pages 195–197, https://doi.org/10.1093/oxfordjournals.bjc.a048602 Published: 01 October 1962