Fan-Out Wafer-Level Packaging (FOWLP) is increasingly utilized for its superior performance, facilitated by flexible heterogeneous integration. Despite its advantages, the interface between Polyimide (PI) and Redistribution Layers (RDL) is susceptible to significant vulnerabilities, notably delamination. This study introduces a quantitative method to assess PI-RDL interface delamination in FOWLP under unbiased Highly Accelerated Stress Tests (uHAST), a standard approach in accelerated reliability testing characterized by high humidity and temperature. Central to our methodology is the development of a time–temperature-moisture equivalence-based creep constitutive model, which significantly enhances our understanding of the impact of temperature and moisture on creep behavior. Furthermore, we have developed an innovative “open moisture absorption” method for preparing samples for four-point bending tests, enabling precise quantification of the time-induced degradation of PI-RDL interfacial fracture toughness under saturated conditions. Our comprehensive finite element model integrates moisture diffusion, the newly developed creep constitutive model, and solid mechanics to accurately simulate the accumulation of strain energy release rate during uHAST, facilitating precise predictions of delamination initiation times in FOWLP. Experimental validation under two uHAST conditions—130 °C/85 %RH for 96 h and 110 °C/85 %RH for 264 h—demonstrates the effectiveness of our approach, predicting the delamination initiation time at the PI-RDL interface with over 80 % accuracy. This predictive methodology is pivotal in enhancing the structural optimization and extending the service life of FOWLP in varied environmental conditions.
Read full abstract