Absorption Of Films Research Articles

PbS QDs and rGO-decorated PbS QDs induced optical properties variations on P3HT:PC61BM composite thin films

PbS QDs and PbS QDs decorated with reduced graphene (rGO) are prepared by hot-injection method using PbO and hexamethyldisilathiane (HMDS) as Pb and S sources, respectively. PbS QDs and PbS QDs:rGO are used as an addition to poly(3-hexylthiophene-2,5-diyl):phenyl-C61-butyric acid methyl ester (P3HT:PC61BM) composite. The effect of their addition on the morphological, topographical and optical properties of spin-coated P3HT:PC61BM thin films are investigated. These additions tune the films to be more homogenous and more flatness as investigated in terms of field scanning electron microscope. The topographical properties of the films are explored by atomic force microscope. The results show decreasing in the grain size and the surface roughness in P3HT:PbSQDs:PC61BM film compared to other composites films. The optical properties of the films are studied over the spectral range 200–2500 nm. On one hand, the absorption coefficient of different films is computed and the optical band gap of the films is found to decrease after addition of PbS QDs and PbS QDs:rGO. On the other hand, the refractive index of the films is explained according to the single-oscillator model to get the dispersion parameters. In addition, the lattice dielectric constant and the ratio of the free-carriers concertation to their effective mass are evaluated.

Understanding the effects of annealing induced structural transformations on the UVC absorbance and other optical properties of RF sputter deposited Ga2O3 thin films

Gallium oxide (Ga2O3) is a transparent material with high absorption in the UVC region of the electromagnetic spectrum and hence is a very important candidate in the field of short wavelength optical device fabrication. A proper understanding of the different optical parameters is necessary for developing more efficient coatings and devices. In this work, changes in the optical behavior of Ga2O3 thin films due to post-deposition annealing (at temperatures 300 °C–900 °C) are discussed in detail. Structural, surface morphological and compositional modifications of the films are identified using the x-ray diffractometer, scanning electron microscopy and x-ray photoelectron spectrometer techniques, respectively. At 900 °C, a highly stable monoclinic β phase of Ga2O3 is obtained. The optical transmittance spectra acquired using UV–Vis spectroscopy indicate an improved UVC absorbance of the β-Ga2O3 films with an excellent visible transmittance (>80%). The structural transformation from amorphous to crystalline β-Ga2O3 phase and the associated reduction in defect density is found to modify other optical attributes, like the bandgap energy, Urbach energy, dispersion parameters, etc.

Investigation of optical and dispersion parameters poly vinyl alcohol doped Safranin O dye (PVA/SO) thin film

Optical characteristics of polyvinyl alcohol/Safranin O dye (PVA/SO) thin films prepared by casting technique have been examined. Compositions and crystalline features of PVA/SO thin films are investigated with X-Ray Diffraction analyses. Ultraviolet–Visible spectroscopy has been utilized to measure the absorption and transmission optical properties of the thin films through the wavelength range 300-900 nm. Two regions can be recognized in absorption coefficient related to the direct band gaps, which are about 3.93 eV of the fundamental energy gap and 2.11eV of the onset gap. The theoretical WempleDiDomenico model has been performed to quantify the static refractive index n and the dispersion energy in addition to the oscillation energy (Eo). The results reveal that the data of the refractive index dispersion in this model obeyed the single oscillator, which is used to deduce the dispersion and the high frequency dielectric constant. In the examined wavelength range, it has been investigated the complex dielectric constant of PVA/SO dye thin films. The ratio of the carrier concentration to the effective mass has been estimated. Oscillation energy values have been examined in this study by describing the expression Eo ≈ Eg and checking the Wemple-DiDomenico model. PVA/SO thin films have interesting physical properties for solar cell applications.

Exploring the morphological surface resistance and optical absorption of thin black carbon nanotube films for electronic and optoelectronic devices

This study investigates the optical and electrical properties of thin black films of carbon nanotubes (CNTs) fabricated under various conditions to explore their potential integration as either a perfect broadband absorber or enhanced counter electrode. The study involves SEM measurements, surface resistance measurements, and UV–Vis. spectrometer analysis. The results show that the CNT thin films exhibit high electrical conductivity and strong light absorption across various wavelengths. Optically, we investigated the impact of varying the growth temperature and catalyst temperature on the absorption profile of the thin films. The fabricated and deposited CNTs showed broadband absorption spectra, reaching 92.8% of the commercial reference sample, covering both visible and near-infrared spectra. Alternatively, the morphological surface resistance for the CNT thin films recorded agonist commercial CNT samples and FTO-coated glass. An average surface resistance of 20.5 Ω/Sq.

Synergistic polyimide&ZrO2 flexible films enable low solar absorption and excellent wave-transparency

Carbon fiber epoxy resin (CFRP), as space satellite antenna materials with great application prospects to transmit and receive signals. It is necessary to ensure its normal operation through surface thermal control, which can be achieved by covering with a flexible film. Polyimide (PI) films modified by ceramics particle have been widely studied in the field of flexible devices. However, there is no research on multifunctional PI films with thermal control and wave transmission multifunctional performance. In this study, ZrO2 modified flexible PI films (PI/ZrO2 films) which can be covered on the surface of satellite antenna was prepared, and its solar absorption and wave transmission properties were studied. Prepared films exhibited excellent heat resistance and mechanical properties, and the addition of ZrO2 increased their thermal stability. The solar absorption of films with 50% ZrO2 is the lowest for 0.30, and the highest reflectance can reach to 88.4%. In addition, the maximum dielectric constant of the films was less than 2.5, and the dielectric loss was less than 0.03, showing an excellent wave transmission performance. The films can be covered on the satellite antenna, and also can be used for other space environment or wave transmission requirements.

Optical Characterization of Ferric-Doped ZnO Thin Film Deposited By Chemical Bath Deposition Method

Fe-doped ZnO holds numerous potential uses in devices such as UV light emitters, piezoelectric transducers, transparent electronics in solar cells, and bright windows as an II-VI semiconductor material. This study looked into the band gap, surface characteristics, optical transmittance, and absorbance of ZnO thin films with Fe doping in different pH conditions such as 8, 9, and 10. The films were prepared using the chemical bath deposition (CBD) method at 350 °C on a glass substrate. The samples were characterized using UV-visible spectroscopy and scanning electron microscopy (SEM). The SEM images of the undoped samples exhibited a lack of cracks, but the doped samples displayed visible cracks due to the presence of Fe in the films. ZnO thin-film surface shape is altered by pH and Fe doping variations. There is a tendency for the films' visual transmission to decrease when the pH rises. The absorbance for all samples increases in the UV and declines in the visible. Fe doping causes the optical band gap Eg to drop. The band gap of both doped and undoped samples reduces when pH rises.

XUV Absorption Spectroscopy and Photoconversion of a Tin-Oxo Cage Photoresist.

Extreme ultraviolet lithography has recently been introduced in high-volume production of integrated circuits for manufacturing the smallest features in high-end computer chips. Hybrid organic/inorganic materials are considered as the next generation of photoresists for this technology, but detailed knowledge about the response of such materials to the ionizing radiation used (13.5 nm, 92 eV) is still scarce. In the present work, we use broadband high-harmonic radiation in the energy range 22-70 eV for absorption spectroscopy and photobleaching (that is, the decrease of absorbance) of thin films of an n-butyltin oxo-cage, a representative of the class of metal-based EUV photoresist. The shape of the absorption spectrum in the range 22-92 eV matches well with the spectrum predicted using tabulated atomic cross sections. The photobleaching results are consistent with loss of the butyl side groups due to the breaking of Sn-C bonds following photoionization. Bleaching is strongest in the low-energy range (<40 eV), where the absorption is largely due to the carbon atoms in the organic groups. At higher energies (42-70 eV), absorption is dominated by the tin atoms, and since these remain in the film after photoconversion, the absorption change in this region is smaller. It is estimated that after prolonged irradiation (up to ∼3 J cm-2 in the range 22-40 eV) about 70% of the hydrocarbon groups are removed from the film. The rate of bleaching is high at the beginning of exposure, but it rapidly decreases with increasing conversion. We rationalize this using density functional theory calculations: the first Sn-C bonds are efficiently cleaved (quantum yield Φ ≈ 0.9), because the highest occupied molecular orbitals (HOMOs) (from which an electron is removed after photoionization) are located on Sn-C sigma bonds. In the photoproducts, the HOMO is localized on tin atoms that have lost their hydrocarbon group (formally reduced to the Sn(II) oxidation state), and holes formed on those tin atoms lead to less efficient cleavage reactions. Our results reveal the primary reaction steps following excitation with ionizing radiation of tin-oxo cages. Our methodology represents a systematic approach of studying and quantitatively assessing the performance of new photoresists and as such enables the development of future EUV photoresists.

Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

The optical absorption coefficient is one of the fundamental properties of semiconductors and is critical to the development of optical devices. Herein, a revival of the constant photocurrent method is presented to measure sub‐bandgap absorption in wide bandgap semiconductor films. The method involves maintaining a constant photocurrent by continually adjusting the impinging photon flux across the energy spectrum. Under such conditions, the reciprocal of the photon flux for uniformly absorbed light is proportional to the absorption coefficient. This method is applied to α‐Ga2O3 and reveals that it can access the absorption coefficient from 1 × 105 cm−1 at the band edge (5.3 eV) to 0.8 cm−1 close to mid‐bandgap (2.7 eV). Changes in the steepness of the absorption curve in the sub‐bandgap region are in excellent agreement with defect states of α‐Ga2O3 reported by deep level transient spectroscopy, indicating that the technique shows promise as a probe of energetically distributed defect states in thin film wide bandgap semiconductors.

Stable photothermal conversion in single-walled carbon nanotube device with pn-junction under uniform sunlight irradiation

N-type single-walled carbon nanotube (SWCNT) films with high air stabilities have attracted significant attention for their potential application in SWCNT devices featuring pn-junctions for power generation. However, SWCNT devices must be locally heated or formed into suspended structures to generate a temperature difference and produce output power. In this study, pn-junction SWCNT films were fabricated via vacuum filtration and subsequently attached to a polyimide substrate, enabling the creation of SWCNT devices without the need for suspended structures. Upon uniform irradiation with artificial sunlight, the SWCNT device produced a stable output voltage and short-circuit photocurrent. A thermographic image showed the emergence of a temperature gradient originating from the center of the SWCNT film and extending to the edge of the polyimide substrate. This phenomenon can be attributed to the higher optical absorption of SWCNT films compared to that of polyimide substrates. Consequently, the diffusion of carriers within the device generated an electric potential difference. Therefore, the SWCNT device generated a temperature gradient and yielded output power under uniform sunlight irradiation. These findings may aid in the development of facile and flexible optical devices, including photodetectors and hybrid devices integrating solar cells.

Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency

Designing effective strategies for mitigating energy crisis highlights a research gap in current solar cell technologies. This study explores the inherent physicochemical properties of thin films composed of copper gallium sulfide telluride (CuGa1−xCrx(S,Te)2) with chromium substitution, prepared through the chemical spray pyrolysis technique. The investigation showcases how the concept of intermediate band structuring contributes to enhancing solar cell efficiency. This enhancement can be attributed to the remarkable mobility (from 1.80 to 5.48 cm2 V−1 s−1) and conductivity (from 1.00 to 6.06 S cm−1) exhibited by pure and 0.1 chromium thin films, respectively. Notably, the Cr‐0.1‐substituted CGST film displays maximum photoresponsivity of 0.624 AW−1, an external quantum efficiency of 145%, and a detectivity of 2.37E10. The fabricated solar cell is subjected to theoretical simulation using solar cell capacitance simulator‐1D software, revealing an upward trend in efficiency from 7.13% to 11.23% with increasing Cr substitution from 0.025 to 0.1. This efficiency improvement can be ascribed to the reduction in bandgap (from 2.40 to 1.72 eV) and the creation of a sub‐band in CGST due to Cr incorporation, as substantiated by UV–vis and NIR spectroscopy. These outcomes suggest that Cr‐0.1‐substituted CGST holds promise as a potential thin film absorber material in solar photovoltaics.

The Preparation of Acryloxyl Group Functionalized Siloxane Polymers and the Study of Their Ultra Violet Curing Properties.

Polysiloxane with multiple acryloxyl groups at the terminal site of the polymer chain was synthesized by the condensation reaction between hydroxyl-terminated polysiloxane and acryloyl chloride and used to improve the cross-linking density of UV-curable silicone materials initiated from dual acryloxy-terminated symmetric polysiloxane or single acryloxy-terminated asymmetric polysiloxane with the mixture of Irgacure 1173 and Irgacure 184 at a mass ratio of 1:1 as the photoinitiator. The effects of factors such as initiator composition, UV irradiation time, structure, and molecular weight of linear dual acryloxy-terminated or single acryloxy-terminated asymmetric siloxane oligomers on the gelation yield, thermal properties, water absorption, and water contact angle of UV-cured film were investigated. The synthesized cross-linking density modifier can be copolymerized with acryloxy-functionalized linear polysiloxanes under the action of a photoinitiator to increase the cross-link density of UV-cured products effectively. Both linear dual acryloxy-terminated or single acryloxy-terminated asymmetric siloxane oligomers can be copolymerized with cross-link density modifiers within 20 s of UV irradiation. The gelation yields of the UV-cured products obtained from the dual acryloxy-terminated siloxane oligomers were greater than 85%, and their surface water contact angles increased from 72.8° to 95.9° as the molecular weight of the oligomers increased. The gelation yields of UV-cured products obtained from single acryloxy-terminated asymmetric siloxane oligomers were less than 80%, and their thermal stabilities were inferior to those obtained from the dual acryloxy-terminated siloxane oligomers. However, the water contact angles of UV-cured products obtained from these single acryloxy-terminated asymmetric siloxane oligomers were all greater than 90°.

Modeling and Fundamental Dynamics of Vacuum, Gas, and Antisolvent Quenching for Scalable Perovskite Processes.

Hybrid perovskite photovoltaics (PVs) promise cost-effective fabrication with large-scale solution-based manufacturing processes as well as high power conversion efficiencies. Almost all of today's high-performance solution-processed perovskite absorber films rely on so-called quenching techniques that rapidly increase supersaturation to induce a prompt crystallization. However, to date, there are no metrics for comparing results obtained with different quenching methods. In response, the first quantitative modeling framework for gas quenching, anti-solvent quenching, and vacuum quenching is developed herein. Based on dynamic thickness measurements in a vacuum chamber, previous works on drying dynamics, and commonly known material properties, a detailed analysis of mass transfer dynamics is performed for each quenching technique. The derived models are delivered along with an open-source software framework that is modular and extensible. Thereby, a deep understanding of the impact of each process parameter on mass transfer dynamics is provided. Moreover, the supersaturation rate at critical concentration is proposed as a decisive benchmark of quenching effectiveness, yielding ≈ 10-3 - 10-1s-1 for vacuum quenching, ≈ 10-5 - 10-3s-1 for static gas quenching, ≈ 10-2 - 100s-1 for dynamic gas quenching and ≈ 102s-1 for antisolvent quenching. This benchmark fosters transferability and scalability of hybrid perovskite fabrication, transforming the "art of device making" to well-defined process engineering.

Investigation on film break-up behavior and the Marangoni effect during non-isothermal liquid/gas falling film absorption

Investigating film rupture behavior is significant but remains challenging for non-isothermal falling film absorption such as liquid desiccant dehumidification. This study captured and analyzed more than 15,000 sets of break-up patterns, and the distribution of film thickness and surface temperature across the entire falling film during liquid–gas convective absorption, with special attention to the characteristics near break-up points. The Marangoni effects, caused by surface temperature gradients, were also evaluated. Improved laser-induced fluorescence technique was employed, in which fluorescence images of film thickness were taken from the back of film substrate, and infrared thermal images were taken from the air channel side, avoiding the influence of channel vibration and reflection caused by air flow. The operating temperature of lithium chloride solution and air were 25 ∼ 60 °C and 25 °C respectively. Results show that for non-isothermal falling film, surface solitary waves play a decisive role in film break-up as most rupture occur near the crests of solitary waves. Break-up points can be classified into fixed and unfixed ones. Fixed points and associated dry areas persist in the flow due to the consistent temperature gradients on both sides of the point, which is the main cause of the reduced mass transfer. Unfixed break-up points can be rewetted by flow, but their presence still causes performance fluctuations as their positions shift laterally during falling film. Increasing the liquid temperature can increase the absorption driving force. However, when solution/substrate temperature difference is insufficient high, the enhanced Marangoni effect will promote solitary waves and both types of break-up points increase. The recommended difference in internally heated falling film regenerators should be higher than 15 °C to enhance film spreading and mass transfer. Increasing countercurrent airflow can improve mass transfer by reducing the film thickness without exacerbating the film rupture. This study explores falling film rupture behavior with flowing air, improving understanding of film dynamics and liquid–gas transfer, valuable for optimizing operational conditions in practical falling film absorption designs.

Visible-light absorption of indium oxide thin films via Bi3+ doping for visible-light-responsive photocatalysis

In2O3 is commonly used as a photocatalyst for hydrogen energy storage. However, it has the disadvantage of a large optical bandgap (3.7 eV), resulting in low absorption of visible light, which corresponds to 50 % of sunlight energy. Band engineering is an efficient method to add visible-light responsivity to wide-bandgap In2O3. In this study, the band engineering of In2O3 was performed by incorporating bismuth to obtain an intermediate band that could absorb visible light. Thin films of In2O3 doped with bismuth (IBO) were grown using mist chemical vapor deposition (CVD), and their optical properties were investigated. Transmittance measurements showed that the IBO thin film exhibited absorption in the visible light region of 400–700 nm, indicating that the introduction of bismuth created an intermediate band in the bandgap of In2O3. IBO thin films with platinum as a co-catalyst could almost completely degrade methylene blue under visible light (420 nm) irradiation for 72 h. Thus, the incorporation of bismuth into In2O3 via mist CVD and the strong absorption of visible light owing to its intermediate band were demonstrated. This study demonstrates that IBO thin films with large absorption in the visible-light region are promising materials for visible-light-responsive photocatalysts.

Self-powered high-performance UV–vis–IR hybrid photovoltaic photodetector based on Epilobium angustifolium L. (Onagraceae)

Water-soluble Epilobium angustifolium (EA) extract was successfully coated on n-type Si single crystal by spin coating method to obtain EA/n-Si heterojunction device. UV–vis absorption and SEM analysis of the EA film were performed and the optical band gap was calculated as 2.71 eV. Electro-optical measurements of the fabricated device were performed and was found to give very good photoresponse in the UV–vis-IR regions. According to the experimental results, the EA/n-Si heterojunction showed not only high-performance photodetector properties but also self-driven properties under visible light as well as under UV and IR lights. At 150 mW/cm2 visible light, the device demonstrated excellent photovoltaic properties with Voc and Isc values of 0.40 V and 4.65 A, respectively. Under IR light, the responsivity, specific detectivity and NPDR reached 0.65 A/W and 1.41 × 1012 Jones, 4.23 × 108 W−1 respectively. Finally, a high-performance organic/inorganic photodetector in the broadband range has been successfully fabricated.

Theoretical and Experimental Study of Different Side Chains on 3,4-Ethylenedioxythiophene and Diketopyrrolopyrrole-Derived Polymers: Towards Organic Transistors.

In this research, two polymers of P1 and P2 based on monomers consisting of thiophene, 3,4-Ethylenedioxythiophene (EDOT) and diketopyrrolopyrrole (DPP) are designed and obtained via Stille coupling polycondensation. The material shows excellent coplanarity and structural regularity due to the fine planarity of DPP itself and the weak non-covalent bonding interactions existing between the three units. Two different lengths of non-conjugated side chains are introduced and this has an effect on the intermolecular chain stacking, causing the film absorption to display different characteristic properties. On the other hand, the difference in the side chains does not have a significant effect on the thermal stability and the energy levels of the frontier orbitals of the materials, which is related to the fact that the materials both feature extremely high conjugation lengths and specific molecular compositions. Microscopic investigations targeting the side chains provide a contribution to the further design of organic semiconductor materials that meet device requirements. Tests based on organic transistors show a slight difference in conductivity between the two polymers, with P2 having better hole mobility than P1. This study highlights the importance of the impact of side chains on device performance, especially in the field of organic electronics.

Pickering emulsion approach: A novel strategy to fabricate waterborne polyurethane with enhanced abradability and water-resistance comparable to that of solvent-based coating

The urgent requirement of replacement for solvent polyurethane (PU) makes waterborne polyurethane (WPU) coating more attractive and popular in many industrial areas. However, the simultaneous realization of good dispersion stability and high performance of the cured films especially water resistance remains challenging. Herein, we propose a novel and facile Pickering emulsion approach to fabricate WPU with enhanced abradability and water-resistance comparable to that of solvent-based PU coating. In this approach, the hydrophobic polyurethane synthesized by poly-addition reaction in ethyl acetate is directly dispersed into water with SiO2 nanoparticles as Pickering stabilizer followed by subsequent evaporation of the remaining solvent to obtain Pickering waterborne polyurethane dispersion (PWPU dispersion). The ability of SiO2 to stabilize emulsion can be modulated by hydrophobic modification with propyltriethoxysilane (PTS). SiO2 nanoparticles with an optimal PTS-grafting rate of 2.8 wt% enables the PWPU dispersion with excellent long-term, chemical, thermal, and freeze-thaw stability. The highly-transparent composite films with honeycomb structures are readily formed by casting PWPU dispersion at room temperature. The thermal and mechanical properties of PWPU films are comparable to or superior to solvent-borne polyurethane (SPU) and self-emulsifying waterborne polyurethane (SWPU) films. Moreover, the water absorption of the PWPU-5 film is approximately 20 times lower than that of SWPU, demonstrating the excellent water-resistance. We further validated the coating performance of PWPU for leather finishing. The hydrophobicity, abrasion resistance and water vapor permeability of PWPU-coated leather are superior to those of SPU and SWPU-coated leather.

Hydrogen absorption in an epitaxial thin film of high-entropy perovskite oxide

We synthesized an epitaxial film of high-entropy perovskite oxide (HEPO) consisting of three elements (Ca, Sr, Ba) in the A site and 12 elements (Si, Ti, Cr, Mn, Fe, Co, Ni, Ge, Zr, Sn, Ce, Hf) in the B site of ABO3, and investigated hydrogen absorption properties in the HEPO film. The hydrogen depth profile was measured by nuclear reaction analysis via the 1H(15N,αγ)12C reaction, showing the hydrogen absorption in the HEPO film with a maximum atomic concentration of 0.3 in the ABO3 unit. The diffusion coefficient of H in the film was analyzed from the H depth profile, and the activation barrier for diffusion was estimated to be (0.54±0.13) eV. An absorption band was observed at 3290 cm−1 in the infrared absorption spectrum, which corresponds to the O–H stretching vibration. Simultaneous measurements of nuclear reaction and resistance revealed that the HEPO film remained electrically insulating regardless of the hydrogen concentration. We demonstrated that hydrogen is incorporated in HEPO forming OH species while keeping HEPO electrically insulating.

Solution-Processed Sb2S3-Based Heterojunction for Self-Powered Broad Band Weak Light Detection.

Antimony sulfide (Sb2S3) has recently regained the attention of photovoltaic researchers as a promising solar absorber; however, its application for the detection of white light remains relatively unexplored. Herein, we report on the self-powered heterojunction photodetector based on a device-grade Sb2S3 film made at low temperature with solution processing. The Sb2S3 absorber film was prepared by single-step spin coating of a novel precursor ink using antimony trichloride as the antimony source along with the low melting thioacetamide as the sulfur source in 2-methoxyethanol, a low boiling environmentally friendly solvent. A simple TiO2/Sb2S3 heterojunction device made by using the film shows a power conversion efficiency of 1.22% without any hole transporting layer. Interestingly, the self-powered photodetector performance of the device under white light exhibits a high on/off ratio of 2.2 × 104 under 1 sun illumination. Moreover, this optical filter-free ultraviolet-visible absorbing near-infrared blind photodetector is equally capable of detecting both strong and weak white light, with a response time of 98 ms. Further, an example of the real-life application of the device is successfully demonstrated by constructing a weak light-detecting sunlight tracking system.

Rear Surface Passivation for Ink‐Based, Submicron CuIn(S, Se)2 Solar Cells

AbstractA N, N‐dimethylformamide and thiourea‐based route is developed to fabricate submicron (0.55 and 0.75 µm) thick CuIn(S,Se)2 (CISSe) thin films for photovoltaic applications, addressing challenges of material usage, throughput, and manufacturing costs. However, reducing the absorber film thickness below 1 µm in a regular CISSe solar cell decreases the device efficiency due to losses at the highly‐recombinative, and mediocre‐reflective Mo/CISSe rear interface. For the first time, to mitigate the rear recombination losses, a novel rear contacting structure involving a surface passivation layer and point contact openings is developed for solution processed CISSe films and demonstrated in tangible devices. An atomic layer deposited Al2O3 film is employed to passivate the Mo/CISSe rear surface while precipitates formed via chemical bath deposition of CdS are used to generate nanosized point openings. Consequently, Al2O3 passivated CISSe solar cells show an increase in the open‐circuit voltage (VOC) and short‐circuit current density when compared to reference cells with equivalent absorber thicknesses. Notably, a VOC increase of 59 mV contributes to active area efficiencies of 14.2% for rear passivated devices with 0.75 µm thick absorber layers, the highest reported value for submicron‐based solution processed, low bandgap CISSe solar cells.