Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

Abstract

The optical absorption coefficient is one of the fundamental properties of semiconductors and is critical to the development of optical devices. Herein, a revival of the constant photocurrent method is presented to measure sub‐bandgap absorption in wide bandgap semiconductor films. The method involves maintaining a constant photocurrent by continually adjusting the impinging photon flux across the energy spectrum. Under such conditions, the reciprocal of the photon flux for uniformly absorbed light is proportional to the absorption coefficient. This method is applied to α‐Ga2O3 and reveals that it can access the absorption coefficient from 1 × 105 cm−1 at the band edge (5.3 eV) to 0.8 cm−1 close to mid‐bandgap (2.7 eV). Changes in the steepness of the absorption curve in the sub‐bandgap region are in excellent agreement with defect states of α‐Ga2O3 reported by deep level transient spectroscopy, indicating that the technique shows promise as a probe of energetically distributed defect states in thin film wide bandgap semiconductors.