Absorber Layer Research Articles

Suppressing Deep-Level Trap Toward Over 13% Efficient Solution-Processed Kesterite Solar Cell.

Cu2ZnSn (S,Se)4 (CZTSSe), a promising absorption material for thin-film solar cells, still falls short of reaching the balance limit efficiency due to the presence of various defects and high defect concentration in the thin film. During the high-temperature selenization process of CZTSSe, the diffusion of various elements and chemical reactions significantly influence defect formation. In this study, a NaOH-Se intermediate layer introduced at the back interface can optimize Cu2ZnSnS4 (CZTS)precursor films and subsequently adjust the Se and alkali metal content to favor grain growth during selenization. Through this back interface engineering, issues such as non-uniform grain arrangement on the surface, voids in bulk regions, and poor contact at the back interface of absorber layers are effectively addressed. This method not only optimizes morphology but also suppresses deep-level defect formation, thereby promoting carrier transport at both interfaces and bulk regions of the absorber layer. Consequently, CZTSSe devices with a NaOH-Se intermediate layer improved fill factor, open-circuit voltage, and efficiency by 13.3%. This work initiates from precursor thin films via back interface engineering to fabricate high-quality absorber layers while advancing the understanding regarding the role played by intermediate layers at the back interface of kesterite solar cells.

Autonomous Atmospheric Water Harvesting over a Wide RH Range Enabled by Super Hygroscopic Composite Aerogels.

Sorption-based atmospheric water harvesting (SAWH) offers a sustainable strategy to address the global freshwater shortage. However, obtaining sorbents with excellent performance over a wide relative humidity (RH) range and devices with fully autonomous water production remains challenging. Herein, magnesium chloride (MgCl2) is innovatively converted into super hygroscopic magnesium complexes(MC), which can effectively solve the problems of salt deliquescence and agglomeration. The MC are then integrated with photothermal aerogels composed of sodium alginate and carbon nanotubes (SA/CNTs) to form composite aerogels, which showed high water uptake over a wide RH range, reaching 5.43 and 0.27kg kg-1 at 95% and 20% RH, respectively. The hierarchical porous structure enables the as-prepared SA/CNTs/MC to exhibit rapid absorption/desorption kinetics with 12 cycles per day at 70% RH, equivalent to a water yield of 10.0 L kg-1 day-1. To further realize continuous and practical freshwater production, a fully solar-driven autonomous atmospheric water generator is designed and constructed with two SA/CNTs/MC-based absorption layers, which can alternately conduct the water absorption/desorption process without any other energy consumption. The design provides a promising approach to achieving autonomous, high-performance, and scalable SAWH.

Effect of defect density, bandgap profile, material composition, thickness, and doping density of the absorber layer on the performance of thin film solar cell based on antimony selenosulfide Sb2(Se1-ySy)3

This article deals with the optimization by simulation of a graded bandgap thin film solar cell based on antimony selenosulfide Sb2(Se1-ySy)3 having the following structure: Front contact/n-ZnO/i-ZnO/p-SbSSe/n-CdS/Back contact. The simulation is performed using SCAPS-1D software. The optimization process includes optimizing the bulk defect density, bandgap profile, material composition, thickness, and doping density of the absorber layer of thin film solar cell based on antimony selenosulfide Sb2(Se1-ySy)3. We found that for a bulk defect density below 1013 cm-3 , using an absorber material with a graded bandgap profile leads to an efficiency of 25.33 % (For a bulk defect density of 1010 cm-3 ) higher than that with a uniform bandgap profile. However, for a bulk defect density of 1013 cm-3 , both profiles provide almost the same maximum solar cell conversion efficiencies of about 13.6 %. Ultimately, for a bulk defect density above 1013 cm-3 , the graded bandgap profile is not useful, and a maximum solar cell conversion efficiency of 10.5 % (For a bulk defect density of 1014 cm-3 ) is achieved with a uniform bandgap profile. These optimization results help to improve the efficiency of low-cost fabricated thin-film solar cells.

Sustainable Performance of Recycled Rubber and Mining Waste Utilized for Efficient Rail Infrastructure

AbstractUtilizing waste byproducts from mining industries and recycled rubber as alternate materials in railway tracks promotes sustainability of transportation infrastructure, while also increasing track longevity by reducing ballast degradation. This paper provides an overview of two such applications including (i) rubber-intermixed ballast stratum (RIBS) by replacing 10% ballast aggregates with granulated rubber particles with the particle sizes carefully selected according to Australian Standards, (ii) synthetic energy absorbing layer using a mixture of steel furnace slag, coal wash and rubber crumbs to replace traditional capping layer. These materials when tested using large-scale triaxial apparatus and field trials proved that tracks with waste materials performed better than the conventional ballasted tracks by reducing ballast breakage and exploiting the higher damping potential of these materials. Though the vertical deformations of the track slightly increased by using these materials albeit within the specified standards, the overall stability improved by reduced dilation and track vibrations. Increasing the life of ballast layer can lead to long-term cost benefits by saving millions of dollars in track maintenance and provide environment benefits through minimizing quarrying of natural rock aggregates and reducing the carbon footprint of mining industries.

Studies on the performance of FASnI3:Zn2+-based lead-free perovskite solar cells: A numerical simulation

The search of stable, lead-free absorber material for perovskite solar cells (PSC) resulted in many alternatives, particularly, zinc (Zn) doped formamidinium tin iodide (FASnI3). This work facilitates in investigating the behavior of four different Zn doping ratios 0 %, 2 %, 5 %, and 10 % (say Zn-0, Zn-2, Zn-5, and Zn-10) on the performance of FTO/PCBM/FASnI3:Zn2+/MoOx/Au solar cell structure. A precise evaluation on the impact of the four various Zn doping ratios in the mentioned solar structure in terms of thickness of perovskite absorber layer, hole transport layer, and electron transport layer were executed. The investigation through numerical study further deals with the role of interfacial defect density and capture cross-section of charge carriers on the performance of suggested PSCs with varying Zn doping ratios. It is evident from the optimization results that PSC having absorber layer thickness of 400 nm yields better power conversion efficiency (PCE) of 11.49 % for Zn-5. The PCE is further improved to 13.98 % for capture cross section of 2 ×10−15 cm2. The entire work witnessed distinguishable superior behavior from FASnI3-based PSC doped with Zn ratio: Zn-5 in comparison to the PSCs doped with other Zn ratios. Furthermore, impact of the series and shunt resistances on performance parameters are also examined.

Hydrogen-Bond Acidic Materials in Acoustic Wave Sensors for Nerve Chemical Warfare Agents' Detection.

The latest trends in the field of the on-site detection of chemical warfare agents (CWAs) involve increasing the availability of point detectors to enhance the operational awareness of commanders and soldiers. Among the intensively developed concepts aimed at meeting these requirements, wearable detectors, gas analyzers as equipment for micro- and mini-class unmanned aerial vehicles (UAVs), and distributed sensor networks can be mentioned. One of the analytical techniques well suited for use in this field is surface acoustic wave sensors, which can be utilized to construct lightweight, inexpensive, and undemanding gas analyzers for detecting CWAs. This review focuses on the intensively researched and developed variant of this technique, utilizing absorptive sensor layers dedicated for nerve CWAs' detection. The paper describes the mechanism of the specific interaction occurring between the target analyte and the sensing layer, which serves as the foundation for their selective detection. The main section of this paper includes a chronological review of individual achievements in the field, largely based on the peer-reviewed scientific literature dating back to the mid-1980s to the present day. The final section presents conclusions regarding the prospects for the development of this analytical technique in the targeted application.

Sheet Resistance Optimization in (Al)GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells

The reduction of the series resistance in multi‐junction solar cells is of high importance for attaining peak efficiencies in concentrator photovoltaics. This study showcases strategies to reduce the sheet resistance of the uppermost subcell of a direct wafer bonded four–junction devices, since it contributes significantly to the series resistance. Therefore, electron mobilities in n–type AlGaInP, lattice matched to GaAs, are investigated across bandgap energies between 1.9 eV and 2.1 eV and for various doping concentrations. The sheet resistances for AlGaInP rear heterojunction cells are determined for the integration in a two terminal four‐junction solar cell. The rear heterojunction cell architecture effectively addresses the sheet resistance optimization because it features a thick n‐type doped absorption layer. The sheet resistance of our current world record quadruple‐junction solar cell with 47.6% efficiency under the 665‐fold concentrated AM1.5d spectrum is 550 Ωsq–1. Here, we show how optimizing the n‐absorption layer in the 1.90 eV GaInP top cell can reduce the sheet resistance to 250 Ωsq–1 without deteriorating the short–circuit current density and current matching. This reduction corresponds to a 5 mΩcm2 improvement in specific series resistance, which would elevate the efficiency of this device to 48.2%.This article is protected by copyright. All rights reserved.

Optimization of vertical gradient Pb-Sn hybrid perovskite solar cells using SCAPS (Solar Cell Capacitance Simulator)

Lead-tin hybrid perovskite solar cells emerge as a promising alternative to traditional lead-based cells, addressing environmental and stability concerns, however their efficiency lags. During the fabrication of lead-tin mixed perovskites, the Pb/Sn ratio varies across the film due to different solubilities under various processing conditions. To tackle this issue, we propose a novel perovskite absorber with a vertical gradient in the lead-tin ratio. Our study employs SCAPS-1D simulations to investigate the performance of ITO/HTL/gradient perovskite/ETL/Ag cell structures with different transport layer materials. We systematically analyze the impact of doping levels, defect density states, and interfacial defects in the absorber layer on device efficiency. Through optimization of the device structural parameters, reflecting real experimental conditions, we achieved an energy conversion efficiency of 24.84%. This efficiency is comparable to that of lead-based perovskite solar cells. Interestingly, simulations suggest that omitting the electron transport layer still yields an efficiency above 23.5%, potentially simplifying the fabrication process. This finding indicates that vertically graded Pb-Sn hybrid perovskite solar cells hold great promise for high-efficiency solar cell applications.

Production and Characterization of Electrodeposited Cadmium Sulfide Semiconductor Films with Different Boron Content

AbstractIn this study, Cadmium Sulfide (CdS) semiconductor films are electrodeposited on Indium Tin Oxide (ITO) substrates at 80 °C base temperature for different boric acid (H3BO3) ratios. The effect of boric acid on these films is investigated. For this, first of all, the structural change of the films is examined. Among the films obtained with different boric acid ratios, the optimum film is achieved with 0.06 m boric acid doped. From the basic absorption spectra (αhʋ) of the obtained CdS:B films, the variation of hʋ is drawn and it is determined that the CdS:B semiconductor films has a direct band transition. From the basic absorption spectra of the obtained CdS:B films, it is observed that the CdS:B semiconductor films has a direct band transition. In addition, the optical energy bandgap values obtained are in agreement with the values in the available literatures. The results of the structural, optical, and morphological properties of the films produced in this study indicate that among the selected additive ratios, 1% boric acid gives the best and optimum deposition condition. The thin films obtained are also found to be useful as absorber layers in photovoltaic solar cells.

Interface defect formation for atomic layer deposition of SnO2 on metal halide perovskites

With the rapidly advancing perovskite solar cell (PSC) technology, dedicated interface engineering is critical for improving device stability. Atomic layer deposition (ALD) grown metal oxide films have drawn immense attention for the fabrication of stable PSC. Despite the advantages of ALD, the deposition of metal oxides directly on bare perovskite has so far not been achieved without damaging the perovskite layer underneath. In addition, the changes to the physicochemical and electronic properties at the perovskite interface upon exposure to the ALD precursors can alter the material and hence device functionality. Herein, we report on a synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) investigation of the interface between metal halide perovskite (MHP) absorber and ALD-SnO2 electron transport layer. We find clear evidence for the formation of new chemical species (nitrogen compound, lead dihalides) and an upward band bending in the MHP and downward band bending in the SnO2 towards the MHP/ALD-SnO2 interface. The upward bending at the interface forms an electron barrier layer of ∼400 meV, which is detrimental to the PSC performance. In addition, we assess the effectiveness of introducing a thin interlayer of the organic electron transport material Phenyl-C61-butyric acid methyl ester (PCBM) between MHP and ALD-SnO2 to mitigate the effects of ALD deposition.

Investigation of the Performance of a Sb2S3-Based Solar Cell with a Hybrid Electron Transport Layer (h-ETL): A Simulation Approach Using SCAPS-1D Software

In order to reduce current leakage and improve electron transfer in solar cells, charge transport layers (CTL), mainly hybrid electron transport layers (h-ETL), are considered as a solution. In this research contribution, computational analysis using SCAPS-1D software is performed to explore the output photovoltaic parameters of a Sb2S3-based solar cell with h-ETL. No theoretical works on this configuration have been previously reported. The main objectives of the present work are to propose a h-ETL with good band alignment with the Sb2S3 absorber, high transparency, and Cd free; to mitigate the instability and cost issues associated with using Spiro-OMeTAD HTL; and to optimize the solar cell. Thus, we calibrated the J-V characteristics and electrical parameters of the FTO/(ZnO/TiO2)/Sb2S3/Spiro-OMeTAD/Au solar cell by numerical simulation and compared them with those of the experiment. Subsequently, our simulations show that to replace the TiO2 ETL used in the experiment and to form the h-ETL with ZnO, IGZO is found to be a good candidate. It has better band alignment with the Sb2S3 absorber than TiO2 ETL, which reduces the trap states at the ETL/Sb2S3 interface; it has high transparency due to its wide bandgap; and an intense electric field is generated at the IGZO/Sb2S3 interface, which reduces the recombination phenomenon at this interface. MoO3, MASnBr3, Cu2O, CuI, and CuSCN HTL were also tested to replace the Spiro-OMeTAD HTL. Simulation results show that the cell with MoO3 HTL achieves higher performance due to its high hole mobility and high quantum efficiency in the visible region; it also allows the solar cell to have better thermal stability (TC=−0.32%/K) than the cell with Spiro-OMeTAD HTL (TC=−0.53%/K). The parameters that could improve the solar cell efficiency (η) obtained after these substitutions were also optimized. In particular, the parameters of the Sb2S3 absorber layer (thickness, defect density, and doping), ETL and HTL layer thicknesses, h-ETL/Sb2S3 interface defect density, and series and shunt resistances have been optimized. Finally, by combining high performance and thermal stability, the results show that the thermal stability of the solar cell depends on the back contact type; thus, nickel (Ni) was found to combine high performance and better thermal stability among the back contacts investigated. After these improvements, the efficiency of the Sb2S3-based solar cell increased from 5.08% (JSC=16.19 mA/cm2, VOC=0.56 V, and FF=55.40%) to 15.43% (JSC=18.51 mA/cm2, VOC=1.11 V, and FF=74.76%). This study proposes an approach to optimize the Sb2S3 upper subcell for tandem solar cells.

Influence of highly optimized charge carrier mobility and diverse physical features toward efficient organic solar cells

Organic solar cells (OSCs) exhibit potential in low-emissive photovoltaic (PV) technology by enhancing excitonic absorption, higher trap-assist recombination, lower excitons diffusion length (Ln,p), and carrier lifetime (τ n,p). The main challenge remains the asymmetric carrier mobility (μ n,p) of the organic absorbing layer (OAL) and various physical factors affecting efficiency (η). This effort has been explored through the attributes of different fullerene derivatives based on binary blends of OAL thickness that suggest new physical insights into the roles of several contributions in the PV performances under intense light illumination. The relationship between optimum mobility ratio (β) and lower trap-state density (Nt) of OAL in OSC structures for inclusive η has been collectively investigated. With a very thin OAL and pioneering transparent hole transport layers (HTLs) can significantly reduce recombination loss and enhance transparency, focusing on near-infrared band absorption and thin hetero-interface design for η and stability. The improved thin OALs, tunable absorption bands, and carrier selectivity address efficiency–transparency trade-offs and reproducibility concerns. The outcome revealed a stable η of 6.27% with a 250 nm thinnest OAL at a temperature of 300 K, which may be interpreted as a coupled framework for effective optimization strategies to accomplish balance between photogeneration and charge carrier recombination. Thus, the observed hypothetically analyzed results have verified the further optimization of OAL thickness for fabrication perspectives with a typical interpretation of ohmic contact.

Boosting the efficiency up to 33 % for chalcogenide tin mono-sulfide-based heterojunction solar cell using SCAPS simulation technique

In the present article, an FTO/n-ZnO/SnS/Sb2S3/Au heterojunction photovoltaic cell structure was modeled and the cell performance in terms of output parameters viz. open circuit voltage (Voc), short-circuit current density (Jsc), efficiency (η) and fill factor (FF) by varying carrier concentration, and thickness of different layers involved, was studied at ambient conditions. The overall theoretical performance of the designed photovoltaic cell was examined using SCAPS 1-D simulation programme. The simulation programme operates by resolving semiconductor equations such as the Poisson equation, drift-diffusion equation, and continuity equation for both electrons and holes. The equations are generally solved in one-dimension (1D) in a steady state condition. The role of Sb2S3 HTL on the performance study of tin sulfide chalcogenide-based heterojunction photovoltaic cell (HPVC) was also analyzed. Moreover, the impact of functioning temperature between 273 K and 350 K on the performance of photovoltaic cell was observed, and an increase in temperature resulted in poor performance. The impact of different metal back contact work functions and some more electrical parameters viz. series-shunt resistances, defect concentration of layers and interfaces, and radiative recombination coefficients were also observed on HPVC. The simulation results revealed that the HTL Sb2S3 forms proper band alignment with the SnS chalcogenide absorber layer and enhanced the efficiency, η of HPVC by lessening the carrier recombination at the rear contact side. The dislocation and interface defect reduced significantly which leads to the smooth conduction of hole carriers, therefore, preventing of minority carriers to recombine within the absorber. A significant increase in the efficiency ∼33.24 % together with performance cell parameters Jsc ∼34.38 mA/cm2, Voc ∼1.09 V, and FF ∼88.49 % was observed.

A novel design and optimization of Si based high performance double absorber heterojunction solar cell

Researchers are currently focusing on Silicon (Si)-based solar cells due to their outstanding semiconductor properties. This study aims to enhance the performance of a new Si based solar cell structure of Cu/FTO/CdS/Si/FeSi2/Au and investigate how the inclusion of FeSi2 as a second absorber and CdS buffer layers affects key performance metrics such as VOC, JSC, FF, and PCE using SCAPS-1D simulation. Various factors including thickness, carrier concentration, defect density, temperature, and electrode design were analyzed in detail to improve performance. The PCE, VOC, JSC, and FF have shown 25.2 %, 0.718 V, 43.3 mA/cm2, and 80.8 %, respectively with reference structure's (Cu/FTO/CdS/Si/Au). The PCE, VOC, JSC, and FF have improved to 27.73 %, 0.74 V, 45.55 mA/cm2, and 79.94 %, respectively by adding FeSi2 layer as a bottom absorber with proposed structures (Cu/FTO/CdS/Si/FeSi2/Au). This research has the potential to offer insights and strategies for the development of cost-effective Si-based thin-film solar cells in a near future.

Design and simulation of a new kesterite solar cell structure with and without a perovskite back surface field layer to exceed 32% efficiency

Copper zinc tin sulfide-selenide (CZTSSe) is a promising thin-film material for photovoltaic solar cells due to its abundance, environmentally friendly constituents, direct bandgap, and high optical absorption in visible light. In this study, we used the SCAPS-1D software to investigate the heterojunction CZTSSe/CdS-based solar cell with and without a perovskite back surface field (BSF) layer added between the absorber layer and the Mo back contact. First, a simple structure CZTSSe/CdS-based solar cell without a BSF layer was considered and replicated. Then, by adding p-MAPbI3 as the BSF layer, a new kesterite solar cell structure has been proposed. Different layer parameters, such as the thickness, acceptor density, and the back contact’s work function, were used to compare the performance of both devices, with and without the BSF layer. A negative impact on cell performance was observed as a function of the series resistance. The analyses showed that the CZTSSe solar cell with the BSF achieved a higher efficiency of 32.27% compared to the cell without the BSF, which had an efficiency of 23.26%. The outcomes of this contribution may provide useful research directions for the thin-film photovoltaic field, enabling the production of highly efficient and low-cost CZTSSe-based solar cells.

Design of Efficient Inverted NiOX‐Based Three‐Terminal Back‐Contact All Perovskite Tandem Solar Cells

AbstractThe development of efficient all perovskite tandem solar cells has faced challenges related to current matching and optical losses. In this work, a design of a non‐coplanar three‐terminal (3T) all perovskite tandem solar cell is presented, which consists of a p‐i‐n inverted NiOX‐based CsPbI2Br perovskite top cell, and a FA0.6MA0.4Sn0.5Pb0.5I3 perovskite bottom cell with back‐contact (BC) device structure. It effectively mitigated the optical losses introduced in non‐absorbing layers and resulted in a 2.9% absolute efficiency improvement compared to that of planar sandwich‐type 3T tandems. Both optical and electrical characteristics of the multi‐terminal tandem cells are investigated. Then, it is focused on understanding the impact of top cell thickness on overall non‐coplanar BC 3T‐tandem performance, considering low‐energy photon optical reflection and carrier transport distance. Following optimizations of energy level and device structure, an efficiency of 32.16% is achieved, with non‐coplanar BC 3T device architecture: top cell consisting of hole extraction layer (ITO/NiOx), CsPbI2Br absorber layer, and electron extraction layer (ZnO/FA0.6MA0.4Sn0.5Pb0.5I3/SnO2/Ag); and bottom cell (Ni/NiOx/FA0.6MA0.4Sn0.5Pb0.5I3/SnO2/Ag); bottom perovskite layer has two functions, one is electron transport layer for top cell, and the other is low‐energy photon absorption layer in bottom cell. It provides insight and a promising pathway for manufacturing high‐efficient all perovskite tandem solar cells.

Complementary absorption effect to improve the optical efficiency of dual-absorption-layered PSCs

By taking advantage of the complementary absorption effect of germanium (Ge) and perovskite, a novel perovskite solar cell (PSC) was proposed by stacking Ge and perovskite thin films to serve as the dual absorption layer. Its absorption spectra and photocurrent were calculated and optimized as a function of the thickness of Ge film by finite element method (FEM). Then, the optical efficiency was further boosted by embedding an array of Ge semi-ellipsoidal nanoparticles within the perovskite film. The predicted maximum photocurrent is revealed to reach 45.72 mA/cm2, which is 2.55 times larger than that of planar referenced PSC. Besides the complementary absorption effect, the localized surface plasmon resonance (LSPR) of Ge nanoparticles and the grating effects of Ge nanoparticle array are revealed to contribute to the obtained Jsc improvement. The present work is insightful for future design and applications of PSCs by introducing Ge thin film and Ge nanoparticles.

Experimental investigation of dynamic soil properties for modeling energy-absorbing layers

Abstract Modeling the propagation of waves in geomechanics is an essential part of dynamic analysis. In geotechnics, the study of the interaction between the soil and the foundation is particularly interesting. In order to mimic low-speed operating types (less than 1,500 rpm), this study details the creation of a dependable and efficient approach for designing and fabricating the steel box container. When employed as a boundary, an absorbing layer drastically reduces the amount of wave reflection that occurs inside the limited region. The present effort is split into two halves. The first step is to calculate the damping layer’s damping constants, subgrade response modulus, damping ratio, shear modulus, vibration amplitude, and resonant frequency. The second section focuses on the dynamic study of the circular foundation by measuring the vibration amplitude, acceleration, velocity, and displacement caused by harmonic vibration machines. The findings demonstrate that simple material borders prevent the wave from dissipating as a consequence of reflection. Attenuation of waves is possible when the absorbing layer of energy represents semi-infinite soil. When absorbing just one layer, the vertical displacements at positions located at the box side boundary and its base decreased by 65, 63, and 67%, respectively. However, it dropped by 97, 96, and 98%, respectively, when two absorbent layers were used. On the basis of these promising results, the model results were compared with and without the absorbing layer. It would appear that the modeling of the absorbing layer, which is designed as two layers, has been satisfied for low speeds of harmonic vibration.

Influence of Supplementary Oxide Layer on Solar Cell Performance

The increasing use of solar energy for electricity production has led to a directly proportional growth in the production of solar cells. Photovoltaic (PV) performance of silicon solar cells can be improved by using more efficient technologies, optimizing processes, and changing behavior in order to reduce operational costs and greenhouse gas emissions. In order to propose solutions for commercial solar cell production with better performance, this article presents an experimental assessment on Supplementary Oxide Layers (SOLs) that are deposited on the surface of a solar cell absorber layer. SOLs are typically used to improve the performance of solar cells by passivating surface defects, reducing recombination losses, and improving the electrical contact between the absorber layer and the metal electrodes. The obtained solar cells are tested under natural sunlight conditions, following a variable dynamic electronic charge profile. The experimental results along with the corresponding I-V and P-V curves, are assessed according to the process parameters, the lighting parameters, and the dynamic load scenario. SOLs have been shown to improve the Power Conversion Efficiency (PCE) of solar cells considerably. The proposed method for increasing the energy efficiency of solar cells can be applied to any type of commercial solar cell and it is easy to implement at the industrial or research level by controlling process parameters. The integration of the whole process, i.e. development of precursor solutions, deposition of thin films, and testing of electrical properties is another contribution of the current study, along with its interdisciplinary character, which involves materials science, electronics, and software programming.

Performance optimization of MASnI3 perovskite solar cells: Insights into device architecture

Recent research has focused an extensive amount of attention on the lead-free substance lead-free methylammonium tin(Sn) tri-iodide (MASnI3), which has emerged as a highly potential absorber layer in the structure of the device. Because it has a larger visible absorption spectrum and a shorter band gap of 1.3 eV than the lead halide perovskite, MASnI3 is a potential alternative to MAPbX3. Through numerical simulation, the different parameters on the device performances are fully investigated. We achieved an open-circuit voltage (Voc) of 0.93 V, a short-circuit current density (Jsc) of 22.20 mA/cm2, a fill factor (FF) of 78.81 %, and a power conversion efficiency (PCE) of 16.39 % using the optimised conditions. It demonstrates the huge potential of recently created lead-free perovskite solar cells and opens up a large dimension of opportunities for the creation of novel perovskite solar cells with a variety of photovoltaic applications. The amalgamation of the Tungsten Disulfide (WS2) material layer between the electron transport layer (ETL) and the absorber layer raised the device module's power conversion efficiency to 20.36 %.