Halide interstitial defects severely hinder the optoelectronic performance of metal halide perovskites, making research on their passivation crucial. We demonstrate, using ab initio nonadiabatic molecular dynamics simulations, that hydrogen vacancies (Hv) at both N and C atoms of the methylammonium (MA) cation in MAPbI3 efficiently passivate iodine interstitials (Ii), providing a self-passivation strategy for dealing with the Hv and Ii defects simultaneously. Hv at the N site (Hv-N) introduces a defect state into the valence band, while the state contributed by Hv at the C site (Hv-C) evolves from a shallow level at 0 K to a deep midgap state at ambient temperature, exhibiting a high environmental activity. Both Hv-N and Hv-C are strong Lewis bases, capable of capturing and passivating Ii defects. Hv-C is a stronger Lewis base, bonds with Ii better, and exhibits a more pronounced passivation effect. The charge carrier lifetimes in the passivated systems are significantly longer than in those containing either Hv or Ii, and even in pristine MAPbI3. Our demonstration of the Hv and Ii defect self-passivation in MAPbI3 suggests that systematic control of the relative concentrations of Hv and Ii can simultaneously eliminate both types of defects, thereby minimizing charge and energy losses. The demonstrated defect self-passivation strategy provides a promising means for defect control in organic-inorganic halide perovskites and related materials and deepens our atomistic understanding of defect chemistry and charge carrier dynamics in solar energy and optoelectronic materials.
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