2D Heterostructures Research Articles

2D–3D heterostructure of PtS2−x /Ga2O3 and their band alignment studies for high performance and broadband photodetector

For deep ultraviolet (UV-C) photodetectors, gallium oxide (Ga2O3) is a suitable candidate owing to its intrinsic ultra-wide band gap and high stability. However, its detection is limited within the UV-C region, which restricts it to cover a broad range, especially in visible and near-infrared (NIR) region. Therefore, constructing a heterostructure of Ga2O3 with an appropriate material having a narrow band gap is a worthwhile approach to compensate for it. In this category, PtS2 group-10 transitional metal dichalcogenide stands at the top owing to its narrow band gap (0.25–1.65 eV), high mobility, and stability for heterostructure synthesis. Moreover, heterostructure with Ga2O3 sensing in UV and PtS2 broad response in visible and IR range can broaden the spectrum from UV to NIR and to build broadband photodetector. In this work, we fabricated a 2D–3D PtS2−x /Ga2O3 heterostructure based broadband photodetector with detection from UV-C to NIR region. In addition, the PtS2−x /Ga2O3 device shows a high responsivity of 38.7 AW−1 and detectivity of 4.8 × 1013 Jones under 1100 nm light illumination at 5 V bias. A fast response of 90 ms/86 ms illustrates the device’s fast speed. An interface study between the PtS2−x and Ga2O3 was conducted using x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy (UPS) which confirmed type-I band alignment. Finally, based on their band alignment study, a carrier transport mechanism was proposed at the interface. This work offers a new opportunity to fabricate large-area high-performance 2D–3D heterostructures based photodetectors for future optoelectronics devices.

Deterministic Fabrication and Quantum-Well Modulation of Phase-Pure 2D Perovskite Heterostructures for Encrypted Light Communication.

Deterministic integration of phase-pure Ruddlesden-Popper (RP) perovskites has great significance for realizing functional optoelectronic devices. However, precise fabrications of artificial perovskite heterostructures with pristine interfaces and rational design over electronic structure configurations remain a challenge. Here, the controllable synthesis of large-area ultrathin single-crystalline RP perovskite nanosheets and the deterministic fabrication of arbitrary 2D vertical perovskite heterostructures are reported. The 2D heterostructures exhibit intriguing dual-peak emission phenomenon and dual-band photoresponse characteristic. Importantly, the interlayer energy transfer behaviors from wide-bandgap component to narrow-bandgap component modulated by comprising quantum wells are thoroughly revealed. Functional nanoscale photodetectors are further constructed based on the 2D heterostructures. Moreover, by combining the modulated dual-band photoresponse characteristic with double-beam irradiation modes, and introducing an encryption algorithm mechanism, a light communication system with high security and reliability is achieved. This work can greatly promote the development of heterogeneous integration technologies of 2D perovskites, and could provide a competitive candidate for advanced integrated optoelectronics.

Growth of Quasi-Two-Dimensional CrTe Nanoflakes and CrTe/Transition Metal Dichalcogenide Heterostructures

Two-dimensional (2D) van der Waals layered materials have been explored in depth. They can be vertically stacked into a 2D heterostructure and represent a fundamental way to explore new physical properties and fabricate high-performance nanodevices. However, the controllable and scaled growth of non-layered quasi-2D materials and their heterostructures is still a great challenge. Here, we report a selective two-step growth method for high-quality single crystalline CrTe/WSe2 and CrTe/MoS2 heterostructures by adopting a universal CVD strategy with the assistance of molten salt and mass control. Quasi-2D metallic CrTe was grown on pre-deposited 2D transition metal dichalcogenides (TMDC) under relatively low temperatures. A 2D CrTe/TMDC heterostructure was established to explore the interface’s structure using scanning transmission electron microscopy (STEM), and also demonstrate ferromagnetism in a metal–semiconductor CrTe/TMDC heterostructure.

Enhanced Activity and Selectivity for Nitrogen Reduction Reaction in Electrode-based Heterostructures: A DFT Computational Study.

Developing sustainable and efficient catalysts for ammonia synthesis from atmospheric molecular N2 under ambient conditions presents a significant 21st-century challenge. Two-dimensional heterostructures, particularly single-atom catalysts (SACs) supported on two-dimensional materials, have emerged as a promising avenue due to their remarkable catalytic activity and selectivity. Electrides, characterized by an abundance of free electrons and high surface activity, have attracted substantial attention in this context. Through density functional theory (DFT) calculations, this study proposes electride-graphene heterostructures (EGHS) as catalysts to effectively regulate charge distribution at the catalytic center, facilitating the optimization of catalytic performance. The EGHS model addresses challenges related to excessive adsorbate binding, mitigating electron transfer compared to electride monolayer adsorption. This novel approach utilizes heterogeneous heterostructures to finely tune the catalytic site, optimizing electron input for enhanced catalysis.Based on the optimized charge transfer for N2 activation, the Cr-doped EGHS (Cr@EGHS) exhibits a promising performance in the nitrogen reduction reaction, leading to, a relatively low limiting potential of -0.85 V and high selectivity. The hypothesis charge transfer depend on N2 activation is further supported by modulating the distance between component layers of heterostructure. These findings contribute to design principles for 2D heterostructure catalysts and offer a reference for experimental synthesis.

Interface engineering of 2D NiFe LDH/NiFeS heterostructure for highly efficient 5-hydroxymethylfurfural electrooxidation

The electrochemical oxidation of 5-hydroxymethylfurfural (HMF) to valuable chemicals is an efficient way to upgrade biomass molecules and replace traditional catalytic synthesis. It is crucial to develop efficient and low-cost earth-abundant electrocatalysts to enhance catalytic performance of HMF oxidation. Herein, a new type of two-dimensional (2D) hybrid arrays consisting of NiFe layered double hydroxides (LDH) nanosheets and bimetallic sulfide (NiFeS) is constructed via interface engineering for efficient electrocatalytic oxidation of HMF to 2,5-furandicarboxylic acid (FDCA). The preparation process of 2D NiFe LDH/NiFeS with ultrathin heterostructure involves in anchoring a Co-based metal-organic framework (Co MOF) as template onto the carbon cloth (CC) via in-situ growth, formation of NiFe LDH on the surface of Co MOF and subsequent partial sulfidation. The electrocatalyst of NiFe LDH/NiFeS exhibits outstanding performance towards HMF oxidation, about 98.5% yield for FDCA and 97.2% Faraday efficiency (FE) in the alkaline electrolyte with 10 mmol/L HMF, as well as excellent stability retaining 90.1% FE for FDCA after six cycles test. Moreover, even at an HMF concentration of 100 mmol/L, the yield and FE for FDCA remain high at 83.6% and 93.6%, respectively. These findings highlight that 2D heterostructure containing abundant interfaces between NiFe LDH nanosheets and NiFeS can enhance the intrinsic activity of LDH and thus promote the oxidation reaction kinetics. Additionally, the synergistic effect of the bimetallic NiFe compounds also improved the selectivity of HMF conversion to FDCA. Our present work demonstrates that constructing 2D ultrathin heterostructure of NiFe LDH/NiFeS is a facile strategy via interface engineering to enhance the intrinsic activity of LDH electrocatalysts, which would open new avenues toward low-cost and advanced 2D nanocatalysts for sustainable energy conversion and electrochemical valorization of biomass derivatives.

β12-Borophene/Graphene Heterostructure as a High-Performance Anode Material for Li-Ion Batteries.

In the world of two-dimensional (2D) materials, various Borophene allotropes have gained significant attention for their remarkable specific capacity. However, the instability of monolayers has challenged experimental investigations of innovative approaches. Due to this limitation, in this work, graphene was investigated as a sublayer with the aim of providing stability to the β12-borophene monolayer. This study delves into the potential of a novel β12-borophene/graphene (β12-B/G) van der Waals (vdW) heterostructure using Quantum Espresso software based on vdW-corrected density functional theory. Our investigation includes exploring thermal and dynamical stability, adsorption energy, open circuit voltage, specific capacity, and diffusion barrier energy properties. Impressively, the calculated specific capacity reached 907 mAh/g, outperforming other 2D materials and heterostructures. The combination of a graphene layer not only ensures dynamical stability but also provides the adsorption energy of lithiumon the β12-borophene layer, simultaneously decreasing the diffusion barrier energy in comparison with the β12-borophene monolayer. The calculated open circuit voltage falls in the range 0.08-1.09 V, rendering it suitable for an overall average commercial voltage. For the borophene layer, the computed diffusion barrier energies are approximately 0.52 and 0.78 eV. Collectively, these findings underscore the potential of theβ12-B/G heterostructure as an advanced anode material for lithium-ion batteries.

Highly efficient spin field-effect transistor based on nanographene and hBN heterostructures: spintronic and quantum transport properties

Intense efforts are being undertaken to design atomic-scale nanodevices in response to the demand for novel electronic/spintronic devices to address the problems facing the current devices. In this work, we construct new spintronic nanodevices based on 2D heterostructures from graphene and hBN quantum dots. The heterostructures are ferromagnetic spin-ordered semiconductors with nonzero spin originating from the unpaired edge electrons of the graphene quantum dots. The net spin and its distribution on different layers of the heterostructures are controllable. For instance, doping the hBN layer in the lateral graphene-hBN-graphene structure with C-atoms can boost the net spin and facilitate its distribution on the three layers. The electronic properties are also affected where half metallicity has been achieved in this system. The I-V characteristics of the lateral G-hBN heterostructure show an oscillating spin-up current that is significantly higher than the regular spin-down current. Doping G-hBN with C-atoms significantly enhances the current magnitude and removes the oscillation due to the decreased net spin by the dopants. We demonstrate a field effect transistor from the lateral G-hBN-G heterostructure that operates based on quantum tunneling from the G-layer through the hBN-layer. The device works as a spin filter at zero gate voltage. A significant enhancement of the drain current is achieved by applying a positive gate voltage. This device shows an ON/OFF ratio of up to 1010 making it an ideal applicant for future spintronic nanodevices.

Two-dimensional heterostars from nanographene and group-III nitrides for efficient spin filters: Spintronic and quantum transport properties

Two-dimensional (2D) heterostructures open the door toward novel applications, such as multiterminal transistors, by integrating the properties of the participant materials. Here we construct 2D heterostars from zigzag-triangular graphene (ZTG) and group-III nitrides. They are investigated using density functional theory and non-equilibrium Green’s function approaches. These heterostars are ferromagnetically spin-ordered devices that originate and distribute on ZTG. Further control over the net spin can be achieved by forming bilayer heterostars where spin can be increased, decreased, or removed. Single-layer heterostars are wide energy gap semiconductors of ∼3.5 eV that decrease to ∼1 eV in bilayers or are kept unchanged in other bilayers. Quantum transport calculations show that different spintronic devices can be constructed by connecting the source/drain voltage to different terminals of the nanostars. These devices are characterized by a low tunneling current through the potential barrier of group-III nitrides that significantly increased by applying gate voltage. A spin filter based on graphene-AlN nanostar with efficient separation of spin-up current is demonstrated. Also, a significant improvement in both the spin-up and spin-down currents can be achieved in the same nanostar but using other terminals. 2D heterostars are then potential candidates for building multi-terminal spintronic devices.

Strategy for transferring van der Waals materials and heterostructures

Two-dimensional (2D) layered materials and heterostructures have garnered significant attention for their exploration of uncharted scientific phenomena and their versatile applications. The customization of van der Waals heterostructures heavily relies on their transfer assembly techniques. While traditional dry or wet transfer methods show promise in manipulating 2D materials and heterostructures, challenges such as residues from supporting layers, incomplete substrate etching, embedded bubbles at interfaces, and transfer-induced damages like cracks and wrinkles still pose significant hurdles. In this review, we comprehensively examine the state of transfer technology, identifying the origins of these technical challenges and discussing potential solutions. We specifically focus on strategies developed within the last 3–5 years that aim to address these complex transfer issues, facilitating the integration of 2D materials and heterostructures into existing silicon-based technologies. Finally, we offer perspectives to guide the optimization of each transfer method and inspire future industrial applications of 2D materials.

A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures

Abstract2D materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them highly suitable for novel device applications. Controllable mixing and matching of the 2D materials with different properties and precise control of the in‐plane twist angle in these heterostructures are essential to achieve superior properties and need to be established through large‐scale device fabrication. To gain fundamental insight into the potential control of these twist angles, 2D heterostructures of tungsten disulfide (WS2) and graphene (Gr) grown by bottom‐up synthesis via metal‐organic chemical vapor deposition (MOCVD) are investigated using a scanning transmission electron microscope (STEM). Specifically, the combination of conventional high‐resolution imaging with scanning nanobeam diffraction (SNBD) using advanced 4D STEM techniques is used to analyze moiré structures. The latter technique is used to reveal the epitaxial alignment within the WS2/Gr heterostructure, showing a direct influence of the underlying Gr layers on the moiré structure in the subsequent WS2 layers. In particular, the importance of grain boundaries (GBs) within the underlying WS2 and Gr layers on the structure of moiré patterns with rotation angles below 2° is discussed.

Magnetic/electric synergy Co@CN/CNTs absorber toward high efficiency electromagnetic waves absorption

Metal-organic framework (MOF) has gained widespread attention as promising electromagnetic waves (EMWs) absorbent due to its 3D structure, porosity and easier modification. However, the structural instability and impedance mismatch presented a serious challenge in meeting the ultra-strong and ultra-broad absorption requirement for EMWs. Therefore, a facile strategy has been applied to prepare carbon nanotubes modified nitrogen-doped carbon encapsulated Co (Co@CN/CNTs) composites by regulating the mass ratio of Co-ZIF67 and melamine under high-temperature pyrolysis. The in-situ synthesis of CNTs and doping of nitrogen-atoms optimized the impedance matching of Co@CN/CNTs composites. The 3D heterostructure, porosity, surface defects and conductive network enhanced EMWs absorption ability. The ultra-strong reflection loss (RL) for Co@CN/CNTs-1:1 sample of −112.14 dB was reached with only 1.3 mm match thickness and corresponding ultra-broad effective absorption bandwidth (EAB) was up to 8.2 GHz. This research could be expected to provide a novel scheme for design and preparation of MOFs derived EMWs absorption materials.

Revealing hidden spin polarization in centrosymmetric van der Waals materials on ultrafast timescales

One of the key challenges for spintronic and quantum technologies is to achieve active control of the spin angular momentum of electrons in nanoscale materials on ultrafast, femtosecond timescales. While conventional ferromagnetic materials and materials supporting spin texture suffer both from conceptional limitations in miniaturization and inefficiency of optical and electronic manipulation, non-magnetic centrosymmetric layered materials with hidden spin polarization may offer an alternative pathway to manipulate the spin degree of freedom by external stimuli. Here we demonstrate an approach for generating transient spin polarization on a femtosecond timescale in the otherwise spin-unpolarized band structure of the centrosymmetric 2H-stacked group VI transition metal dichalcogenide WSe2. Using ultrafast optical excitation of a fullerene layer grown on top of WSe2, we trigger an ultrafast interlayer electron transfer from the fullerene layer into the WSe2 crystal. The resulting transient charging of the C60/WSe2 interface leads to a substantial interfacial electric field that by means of spin-layer-valley locking ultimately creates ultrafast spin polarization without the need of an external magnetic field. Our findings open a novel pathway for true optical engineering of spin functionalities such as the sub-picosecond generation and manipulation of ultrafast spin currents in 2D heterostructures.

Two-Dimensional Lanthanide Metal-Organic Framework Heterostructures for Noninvasively Photoresponsive High-Security Photonic Barcodes.

Stimuli-responsive micro/nanoscale photonic barcodes show great capacity for encryption and anticounterfeiting technologies due to multiple authentications, yet their application is commonly restricted by invasive stimuli. Herein, we report noninvasive light-stimulated high-security photonic barcodes based on spatially assembled photoresponsive two-dimensional (2D) 1,3,5-benzenetribenzoate (BTB)@Ln-MOF host-guest heterostructures. The photoluminescence (PL) spectra information on BTB@Ln-MOF heterostructures could be precisely controlled by the different wavelengths of ultraviolet (UV) light trigger. By using the PL properties and 2D heterostructures as cryptographic primitives, spatially resolved smart photonic barcodes based on both spectral and graphical coding are realized in BTB@Ln-MOF host-guest materials. These results will pave an avenue for the development of smart stimuli-responsive photonic barcodes for anticounterfeiting applications.

Goodenough–Kanamori–Anderson high-temperature ferromagnetism in tetragonal transition-metal xenes

Seminal Goodenough–Kanamori–Anderson (GKA) rules provide an inceptive understanding of the superexchange interaction of two magnetic metal ions bridged with an anion, and suggest fostered ferromagnetic interaction for orthogonal bridging bonds. However, there are no examples of two-dimensional (2D) materials with structure that optimizes the GKA arguments towards enhanced ferromagnetism and its critical temperature. Here we reveal that an ideally planar GKA ferromagnetism is indeed stable in selected tetragonal transition-metal xenes (tTMXs), with Curie temperature above 300 K found in CrC and MnC. We provide the general orbitally-resolved analysis of magnetic interactions that supports the claims and sheds light at the mechanisms dominating the magnetic exchange process in these structures. Furthermore, we propose the set of three GKA-like rules that will guarantee room temperature ferromagetnism. With recent advent of epitaxially-grown tetragonal 2D materials, our findings earmark tTMXs for facilitated spintronic and magnonic applications, or as a desirable magnetic constituent of functional 2D heterostructures.

Architecture engineering enables high-stability 2D/multi-2D heterostructured MXene/TiO2 for boosting solar-driven CO2 reduction

Photocatalytic CO2 reduction to produce value-added products is considered a promising solution to solve the global energy crisis and the greenhouse effect. In this study, 2D/multi-2D heterostructures were successfully synthesized through electrostatic self-assembly between Ti3C2 and TiO2 nanosheets. The optimal sample (15TC/TiO2) shows yields of 209.98 and 28.09 μmol·g−1·h−1 for CO and CH4, respectively. According to the characterization and simulation study, the enhanced performance is mostly attributable to the 2D/multi-2D heterostructures, which are formed from two phases with huge differences in morphology and size, enabling the development of multiple tiny contact surfaces to increase the effective contact area. In addition, the TiO2 nanosheets utilized in the construction have up to 80 % exposure to the (001) facets, which offer catalytically active sites. This work provides a feasible method for constructing 2D/multi-2D heterostructure catalyst materials.

Uncooled Broadband Photodetection via Light Trapping in Conformal PtTe2-Silicon Nanopillar Heterostructures.

Dirac semimetals have demonstrated significant attraction in the field of optoelectronics due to their unique bandgap structure and high carrier mobility. Combining them with classical semiconductor materials to form heterojunctions enables broadband optoelectronic conversion at room temperature. However, the low light absorption of layered Dirac semimetals substantially limits the device's responsivity in the infrared band. Herein, a three-dimensional (3D) heterostructure, composed of silicon nanopillars (SiNPs) and a conformal PtTe2 film, is proposed and demonstrated to enhance the photoresponsivity for uncooled broadband detection. The light trapping effect in the 3D heterostructure efficiently promotes the interaction between light and PtTe2, while also enhancing the light absorption efficiency of silicon, which enables the enhancement of the device responsivity across a broadband spectrum. Experimentally, the PtTe2-SiNPs heterojunction device demonstrates excellent photoelectric conversion behavior across the visible, near-infrared, and long-wave infrared (LWIR) bands, with its responsivity demonstrating an order-of-magnitude improvement compared to the counterparts with planar silicon heterojunctions. Under 11 μm laser irradiation, the noise equivalent power (NEP) can reach 1.76 nW·Hz-1/2 (@1 kHz). These findings offer a strategic approach to the design and fabrication of high-performance broadband photodetectors based on Dirac semimetals.

Giant Faraday rotation in atomically thin semiconductors

Faraday rotation is a fundamental effect in the magneto-optical response of solids, liquids and gases. Materials with a large Verdet constant find applications in optical modulators, sensors and non-reciprocal devices, such as optical isolators. Here, we demonstrate that the plane of polarization of light exhibits a giant Faraday rotation of several degrees around the A exciton transition in hBN-encapsulated monolayers of WSe2 and MoSe2 under moderate magnetic fields. This results in the highest known Verdet constant of -1.9 × 107 deg T−1 cm−1 for any material in the visible regime. Additionally, interlayer excitons in hBN-encapsulated bilayer MoS2 exhibit a large Verdet constant (VIL ≈ +2 × 105 deg T−1 cm−2) of opposite sign compared to A excitons in monolayers. The giant Faraday rotation is due to the giant oscillator strength and high g-factor of the excitons in atomically thin semiconducting transition metal dichalcogenides. We deduce the complete in-plane complex dielectric tensor of hBN-encapsulated WSe2 and MoSe2 monolayers, which is vital for the prediction of Kerr, Faraday and magneto-circular dichroism spectra of 2D heterostructures. Our results pose a crucial advance in the potential usage of two-dimensional materials in ultrathin optical polarization devices.

Comparative study of interfacial charge transfer at the junction between CuInS2:In2S3/g-C3N4 photocatalysts for sacrificial hydrogen evolution activity

The quest for sustainable and efficient renewable energy sources has escalated in recent years, with photocatalytic hydrogen production gaining prominence due to its potential to harness solar energy for clean fuel generation. In this study, we design 2D/2D heterostructure CuInS2:In2S3/g-C3N4 nanosheets utilizing electrostatic interaction for hydrogen evolution reaction under visible light irradiation. Integrating CuInS2:In2S3 and g-C3N4 layers to form an interfacial 2D:2D heterostructure results in a broad light absorption range, effective charge separation, and excellent stability. The heterostructure ensures efficient interfacial charge transfer pathways, mitigating electron-hole recombination and promoting hydrogen evolution. The hybrid nanosheets prepared with the hydrothermal method exhibited ∼40-fold synergistic enhancement in hydrogen production and long-term stability. The synergistic boost in activity resulted from the formation of S-scheme heterojunctions (CuInS2/g-C3N4 and CuInS2/In2S3) within hybrid nanosheets.

Steep slope threshold switching field‐effect transistors based on 2D heterostructure

AbstractIn dealing with the increasing power dissipation of electronic systems with increasing integration density, a field‐effect transistor (FET) with steep switching slope that overcomes the thermionic limit is vital to achieve low‐power operations. Here, we report two types of threshold switching (TS) FETs based on 2D Van der Waals heterostructures by virtue of the abrupt resistive switching of the hexagonal boron nitride (hBN) TS device. The common hBN dielectric layer functions as the switching medium for the TS device and the gate dielectric for the 2D FET enabling seamless integration of the hBN TS device and baseline 2D FET. TS FET in source configuration by connecting the TS device to the source terminal of the 2D FET offers an ultralow average subthreshold swing (SS) of 1.6 mV/dec over six decades of drain current at room temperature and suppressed leakage current. TS FET in gate configuration by connecting the TS device to the gate terminal of the 2D FET also exhibits steep switching slope with ultralow SS of 10.6 mV/dec. The proposed compact device structures integrating 2D FET and TS device provide a potential approach of monolithic integration toward next‐generation low‐power electronics.

Evaluating the Efficiency of Boron Nitride Coating in Single-Walled Carbon-Nanotube-Based 1D Heterostructure Films by Optical Spectroscopy.

Single-walled carbon nanotube (SWCNT) films exhibit exceptional optical and electrical properties, making them highly promising for scalable integrated devices. Previously, we employed SWCNT films as templates for the chemical vapor deposition (CVD) synthesis of one-dimensional heterostructure films where boron nitride nanotubes (BNNTs) and molybdenum disulfide nanotubes (MoS2NTs) were coaxially nested over the SWCNT networks. In this work, we have further refined the synthesis method to achieve precise control over the BNNT coating in SWCNT@BNNT heterostructure films. The resulting structure of the SWCNT@BNNT films was thoroughly characterized using a combination of electron microscopy, UV-vis-NIR spectroscopy, Fourier-transform infrared (FT-IR) spectroscopy, and Raman spectroscopy. Specifically, we investigated the pressure effect induced by BNNT wrapping on the SWCNTs in the SWCNT@BNNT heterostructure film and demonstrated that the shifts of the SWCNT's G and 2D (G') modes in Raman spectra can be used as a probe of the efficiency of BNNT coating. In addition, we studied the impact of vacuum annealing on the removal of the initial doping in SWCNTs, arising from exposure to ambient atmosphere, and examined the effect of MoO3 doping in SWCNT films by using UV-vis-NIR spectroscopy and Raman spectroscopy. We show that through correlation analysis of the G and 2D (G') modes in Raman spectra, it is possible to discern distinct types of doping effects as well as the influence of applied pressure on the SWCNTs within SWCNT@BNNT heterostructure films. This work contributes to a deeper understanding of the strain and doping effect in both SWCNTs and SWCNT@BNNTs, thereby providing valuable insights for future applications of carbon-nanotube-based one-dimensional heterostructures.