Two-dimensional heterostars from nanographene and group-III nitrides for efficient spin filters: Spintronic and quantum transport properties

Abstract

Two-dimensional (2D) heterostructures open the door toward novel applications, such as multiterminal transistors, by integrating the properties of the participant materials. Here we construct 2D heterostars from zigzag-triangular graphene (ZTG) and group-III nitrides. They are investigated using density functional theory and non-equilibrium Green’s function approaches. These heterostars are ferromagnetically spin-ordered devices that originate and distribute on ZTG. Further control over the net spin can be achieved by forming bilayer heterostars where spin can be increased, decreased, or removed. Single-layer heterostars are wide energy gap semiconductors of ∼3.5 eV that decrease to ∼1 eV in bilayers or are kept unchanged in other bilayers. Quantum transport calculations show that different spintronic devices can be constructed by connecting the source/drain voltage to different terminals of the nanostars. These devices are characterized by a low tunneling current through the potential barrier of group-III nitrides that significantly increased by applying gate voltage. A spin filter based on graphene-AlN nanostar with efficient separation of spin-up current is demonstrated. Also, a significant improvement in both the spin-up and spin-down currents can be achieved in the same nanostar but using other terminals. 2D heterostars are then potential candidates for building multi-terminal spintronic devices.