The dependence of photocatalytic technology on external irradiation light sources limits the round-the-clock utilization of photocatalysts. Meanwhile, CO2 and H2 generated on the photocatalysts are mixed together because traditional photocatalysts are mostly powdery, which requires further separation and purification of the generated gases. In this work, an immobilized Z-scheme Cu|CuO/SrAl2O4:Eu2+,Dy3+ composite film was successfully prepared for the first time as a photocatalyst, enabling round-the-clock degradation of ciprofloxacin and hydrogen evolution on both sides of copper foil. The efficiency of ciprofloxacin degradation and hydrogen evolution was systematically investigated to evaluate the performance of the prepared samples. The results showed that after 180 min of continuous simulated solar irradiation followed by 240 min in darkness, the degradation efficiency reached 84.78 % for ciprofloxacin and 672.29 μmol/g for hydrogen evolution. This work aims to contribute to round-the-clock photocatalytic degradation of organic pollutants and hydrogen evolution.

In this manuscript, the structural, optoelectronic, elastic, vibrational, and thermodynamic properties of RbKM (M = S, Se, Te) chalcogenides are explored via first principles approach. The estimated equilibrium lattice parameters a(c) through the TB-mBJ functional are 5.3876 Å (8.2810 Å), 5.2700 Å (8.6550 Å) and 5.2656 Å (8.7707 Å) for RbKS, RbKSe and RbKTe, respectively. The large value of the cohesive (Ecoh) and formation energy (Eform) reveals that all these compounds are stable at 0 K that may be difficult to decompose at ambient conditions. The direct band gap for RbKS, RbKSe and RbKTe is noted as 4.05 eV, 3.71 eV and 3.63 eV, respectively that is sufficient to declare them as semiconducting materials. So far as, the projected density of states (PDOS), pseudo electrons residing in d orbitals of the rubidium atoms contribute in the conduction region and p orbitals of chalcogen elements partake in the valence band. The optical parameters are determined by Kramers-Kronig relations. The elastic constants unveil that all compounds are mechanically stable and hold anisotropic nature. Here the vibrational properties of RbKM (M = S, Se, Te) are examined through Density functional perturbation theory (DFPT) technique. The Harmonic Approximation Method (HAM) is utilized to seek thermodynamic stability that is ensured due to the observance of negative free energy for all cases. Our theoretical outcomes for RbKM (M = S, Se, Te) can contribute significantly to amelioration for future research in devising optoelectronic and energy harvesting like appliances.

This study delves into the geometrical structure, electronic characteristics, and optical properties of hydrogen (H) and fluorine (F) substituted graphyne (GY) and graphdiyne (GDY) sheets using density functional theory (DFT). The investigated sheets are denoted as R-GY and R-GDY, where R represents either H or F. Our results reveal the energetic stability of these sheets through cohesive energy calculations and confirm their thermal stability via ab-initio molecular dynamics (AIMD) simulations. It is found that R-GY and R-GDY sheets are semiconductors. The optical characteristics of H-substituted sheets closely resemble those of F-substituted ones. The findings showcase the strong light-absorbing capabilities of R-GY and R-GDY sheets in the visible and ultraviolet regions, making them favorable materials for applications in photovoltaic systems and ultraviolet absorbers. The reflection and transmission coefficients indicate the high transparency of the sheets for light. Our findings could enhance the understanding of the electronic and optical properties of R-GY and R-GDY, potentially inspiring researchers to develop optoelectronic devices utilizing these materials.

Hydrogen (H2) is viewed as a promising solution for future energy demands because of its effectiveness, widespread availability, environmentally friendly properties, and sustainability. The study focuses on developing and evaluating H2 gas sensors based on optical fiber coated with nanocomposites such as polyaniline (PANI), graphene oxide (GO), and palladium (Pd) as sensing layers. An optical transducing channel was developed using a 125 μm diameter multimode optical fiber to improve the light field. The optical fiber was reduced to 20 μm and coated with the PANI/GO/Pd nanocomposite using drop casting. The proposed optical fiber sensor achieved a sensitivity of 9.79/vol%. The response and recovery time were calculated at room temperature and found to be 60 and 190 s, respectively. Overall, the developed optical fiber sensor shows high stability and excellent selectivity to H2 gas when compare to other gases such as NH3 and CH4.

1.2-kV SiC MOSFETs with different cell topologies were fabricated based on the same design and process parameters in a commercial 6-inch SiC foundry. A series of comparative evaluations were conducted on the static and dynamic performance of SiC MOSFETs with common linear, island-shaped P+ linear, current sharing linear, and hexagonal cell topologies for the first time. The common linear cell topology has the lowest switching loss, but the highest on-resistance. The island-shaped P+ linear and current sharing linear cell topologies optimized the cell pitch, reduced the specific on-resistance by 9.68 %, but the freewheeling and surge capability of their body diode have been decreased. The current sharing linear cell topology has the highest Ciss/Crss, making it the lowest in crosstalk intensity. The hexagonal cell topology has the lowest on-resistance, but performs the worst in terms of blocking characteristics and switching losses.

In this work we present studies on the influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga2O3 heterojunction diodes. Obtained results shows substantial effect of oxygen partial pressure on the electrical properties of NiO/β-Ga2O3 heterojunction diodes. The diodes with NiO layers deposited in pure Ar shows Schottky-like I-V characteristics with low ideality factor of 1.05 and barrier height of 1.27 eV as well as low turn-on voltage close to 1V. On the other hand, diodes with NiO layer deposited in oxygen containing atmosphere shows typical p-n diode characteristics. The best electrical characteristics i.e. low on-state resistance of 2.85 mΩcm2, lack of defects and low ideality factor down to 1.07 at RT along with high breakdown voltage close to 900V without any junction termination, were obtained for diodes with NiO layers deposited at 50 % oxygen content. We have demonstrated that by optimization of oxygen partial pressure, the properties of NiO/β-Ga2O3 heterojunction diodes can be tuned and excellent electrical performance in terms of low-on state resistance, high breakdown voltage, low-leakage current and low ideality factor, can be obtained.

Nanomaterials are a potential alternative to conventional random resistive access memory (ReRAM) in non-volatile memory (NVM) due to their unique electrical and physical properties. Nevertheless, obtaining a specific NVM characteristic [particularly Write-Once-Read-Many (WORM)] using carbon-based electrodes necessitates further assessment. This study proposed a reinvented methodology for TiO2-based devices to produce WORM memory behavior using the doctor blade method. A carbon/graphite counter electrode (Gr/Cb) was fabricated and characterized for TiO2-based resistive switching devices. Consequently, the Gr/Cb electrode device quickly transitioned from a high to low resistance state, suggesting WORM memory behavior. Approximately 66.7 % improvement (∼1.8 V–∼0.6 V) was observed in the required applied voltage when the active area was reduced, indicating lower power consumption. Overall, this study provided evidence of the approach's feasibility in practical applications, demonstrating lower costs and simplicity. The structure also highlighted the importance of understanding the WORM behavior for effectively utilizing carbon-based electrodes in non-volatile memories.

Photocatalytic water splitting is a favourable technology to solve present-day environmental pollution and energy crises by generating green hydrogen. In this context, a variety of materials have been investigated as photocatalysts for H2 generation. Among the materials, Lanthanum (La) based materials have emerged as promising candidates for H2 generation due to their unique electronic and structural properties. La can enhance the catalytic activity of other metals or metal oxides when used as a co-catalyst. La can also modify the surface properties of catalysts, such as surface acidity or basicity, which can influence the adsorption and activation of reactant molecules. Herein, recent progress in the La-based cocatalyst and semiconducting materials towards H2 generation with their engineering aspects has been discussed. First, the fundamentals and properties of La-based materials involved in the photocatalytic generation of H2 are discussed. The strategies including La used as dopant and co-dopant and its effect on the photocatalytic performance are discussed. Numerous La-based compounds and their composites are discussed to analyse their photocatalytic performance towards H2 production. In addition, it explores various engineering strategies including heterojunction formation, surface modification, defect engineering and morphology control, to tailor the properties of La-based materials for enhanced photocatalytic H2 production. In conclusion, La-based materials provide valuable insights to propel the development of efficient and sustainable photocatalytic systems for hydrogen generation.

Spectral range of crystalline silicon absorption could be extended to near- and even mid-infrared region by its hyperdoping via ion-implantation technology, requiring the following thermal annealing for removing ion-induced defects, recrystallizing the crystalline structure and activating the doping impurity. In this article, the crystalline structure, chemical and electrical characteristics of sulfur-hyperdoped silicon layers with broadly variable impurity concentration (1018-1021 cm−3) and annealed by a nanosecond laser were investigated for the first time by Raman, energy-dispersion x-ray and infrared spectroscopy, as well as by van der Paw and Hall measurements, respectively. The most preferable sulfur concentration for silicon hyperdoping from the point of view of impurity optical and electrical activation was found to be 1020 cm−3.

Transition Metal Dichalcogenide (TMD) supercapacitors have garnered significant interest due to their considerable potential. Contributing to the advancements in this field, our study focuses on the first successful synthesis of nanoparticle Co-doped MoS2-COOH using a hydrothermal approach. We examine its performance in electrochemical applications, specifically as an electrode for a supercapacitor. The MoS2-COOH/Co composite was characterized using various techniques, including X-Ray diffraction (XRD), Fourier-transform infrared spectrum (FTIR), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, adsorption–desorption isotherm, and thermogravimetric analysis (TGA). The supercapacitive characteristics of MoS2-COOH/Co composite in a 1 M KCl electrolyte were analyzed through cyclic voltammetry (CV), continuous current charge-discharge cycling (CD), and electrochemical impedance spectroscopy (EIS). Following 3000 charge-discharge cycles, the MoS2-COOH/Co electrode, constructed on Ni foam, exhibited a unique capacitance of 2500 F g−1 with a cyclic retention of 85 % at a density of 20 mA cm−2. The synthesized material demonstrated excellent electrochemical performance for supercapacitor applications, as evidenced by Nyquist and Bode phase angle results.