A carbon electrode approach for TiO2-write-once-read-many resistive memories

Abstract

Nanomaterials are a potential alternative to conventional random resistive access memory (ReRAM) in non-volatile memory (NVM) due to their unique electrical and physical properties. Nevertheless, obtaining a specific NVM characteristic [particularly Write-Once-Read-Many (WORM)] using carbon-based electrodes necessitates further assessment. This study proposed a reinvented methodology for TiO2-based devices to produce WORM memory behavior using the doctor blade method. A carbon/graphite counter electrode (Gr/Cb) was fabricated and characterized for TiO2-based resistive switching devices. Consequently, the Gr/Cb electrode device quickly transitioned from a high to low resistance state, suggesting WORM memory behavior. Approximately 66.7 % improvement (∼1.8 V–∼0.6 V) was observed in the required applied voltage when the active area was reduced, indicating lower power consumption. Overall, this study provided evidence of the approach's feasibility in practical applications, demonstrating lower costs and simplicity. The structure also highlighted the importance of understanding the WORM behavior for effectively utilizing carbon-based electrodes in non-volatile memories.