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Fully-Hermetic 71-86 GHz WR12 Coherent Photonic Mixer Providing an RF Output Power up to +15 dBm

Novel compact fully-hermetic E-band (71-86 GHz) coherent photonic mixer (CPX), featuring a rectangular waveguide WR12 output and providing an RF output power up to +15 dBm, is reported in this work. According to our knowledge, this is the highest reported output power level radiated directly from a photonic mixer module in the E-band frequency range. The fabricated WR12-CPX allows direct optical-to-wireless conversion of optical baseband or IF-band signals, e.g. for radio-over-fiber (RoF) fronthauling in mobile communications. The module comprises an InP-based balanced-PD (BPD) chip, a GaAs HEMT MMIC medium power amplifier, and a laminate-based grounded coplanar waveguide to rectangular waveguide (GCPW-WR12) transition. The transition couples the optically generated, e.g. via heterodyning, millimeter-wave signal from the output of the BPD chip to the WR12. It is based on a double-slot antenna structure and developed on a Rogers RT/duroid 5880 laminate with a thickness of 127 µm. The presented GCPW-WR12 transition enables the development of fully-hermetic photonic packages, which is required to improve the durability of the BPD chip. The transition design is optimized by utilizing a 3D electromagnetic simulation software for achieving a wide operational bandwidth with an average insertion loss (IL) of about 1.6 dB and a return loss (RL) higher than 15 dB in the frequency range of 71-86 GHz. Finally, the RF responsivity of the WR12-CPX module and the hermeticity of the transition are experimentally characterized.

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Planar 0.05–1.1 THz Laminate-Based Transition Designs for Integrating High-Frequency Photodiodes With Rectangular Waveguides

Compact planar laminate-based transitions for integrating high-frequency photodiodes (PDs) with rectangular waveguides (WRs) are presented for the WR15 to WR1 standard waveguide bands, i.e., from 0.05 THz up to 1.1 THz. The transitions couple the optically generated (e.g., via heterodyning) millimeter-wave or terahertz signals from the grounded coplanar waveguide (GCPW) output of the PD chip to the WR. To our knowledge, this is the first scalable integration concept that enables hermetic photodiode packaging up to the terahertz frequency range. For the WR15-WR6 bands, all transitions are designed on ultrathin microfiber reinforced PTFE composites (127-μm Rogers RT/duroid 5880 laminate). For the WR5-WR2.2 and the WR1.5-WR1 bands, liquid crystalline polymer ULTRALAM 3850 laminates are used with a thickness of 50 and 25 μm, respectively. The proposed GCPW-WR transition design is based on a double-slot antenna structure and enables the development of fully hermetic photonic packages, which is required to improve the durability of the PD chip. The transition designs are optimized by systematic EM-wave propagation modeling for achieving a wide operational bandwidth of up to 30% of the respective center frequency for each WR band. The optimized transitions exhibit an average insertion loss of about 1.5 dB and a return loss of about 10 dB for all waveguide bands (WR15-WR1). Based upon the systematic numerical modeling, generic guidelines are developed that allow designing a specific transition for any given waveguide band to 1.1 THz. In addition to the numerical analysis, GCPW-WR12 transitions for E-band (60-90 GHz) operation are fabricated and integrated with InP-based balanced-PD chips and GaAs HEMT MMIC medium power amplifiers in a fully hermetic package. Furthermore, hermetic WR12 coherent photonic mixer (CPX) modules are developed. The packaged WR12-type CPX allows direct optical-to-wireless conversion of optical baseband or IF-band signals, e.g., for radio-over-fiber fronthauling in mobile communications. The WR12-CPX module provides RF output power of up to +15 dB·m at 77.5 GHz.

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A Linear Differential Transimpedance Amplifier for 100-Gb/s Integrated Coherent Optical Fiber Receivers

This paper presents the design and measurements of a 32-Gb/s differential-input differential-output transimpedance amplifier (TIA) employed in dual polarization integrated coherent receivers for 100-Gb Ethernet. A circuit technique is shown that uses a replica TIA to stabilize the operating point of the two shunt-feedback input stages as well as to cancel the dc part of the two complementary input currents and balances their offset. The TIA can be operated in two modes, an automatic gain control mode to retain a good total harmonic distortion (THD) over a wide dynamic range and a manual gain control mode. Electrical as well as optical-electrical characterization of the TIA are presented. It achieves a maximum differential transimpedance of 74 dB $\Omega $ , 33 GHz of 3-dB bandwidth, 12.2 pA/ $\sqrt {\text {Hz}}$ of average input-referred noise current density with the photodiode, 900 mVpp of maximum differential output swing, less than 1% of THD for 600 mVpp differential output swing, and 500 $\mu \text{A}_{\text {pp}}$ differential input current. The linearity of the TIA is furthermore demonstrated with PAM4 measurements at 25 Gbaud. The dual TIA chip is fabricated in a 0.13- $\mu \text{m}$ SiGe:C BiCMOS technology, dissipates 436 mW of power and occupies 2 mm2 of area.

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