Abstract
ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for current and future works that utilize a cheaper preparation technique. Blue and white LEDs have been shown to spread across compound semiconductors. This II-VI compound semiconductor with a direct and wide band gap is used in the study which focused on a preparation and its characterization. The device is developed using a circular chip of ZnSe but only part of the active region is designed to allow shorter computation time. Analyses of the proposed LED are performed in an environment that allows optical transition and nonradiative recombination mechanisms. Voltage variation from 0 V to 1.5 V is maintained throughout the observation. The curent-voltage plot shows the p-n junction or diode behavior with central emissive layer. The two dimensions surface emission rate obtained indicates that voltage increment causes the emission concentration to become higher near the central pcontact. The LED efficiency is assessed in terms of internal quantum efficiency and emitting rate.
Highlights
Light emitting diode, LED has attracted many researchers due to its low energy consumption and long lasting operation
This II-VI compound semiconductor with a direct and wide band gap is used in the study which focused on a preparation and its characterization
Researchers have been studying the physics of II-VI and III-V compound materials such as gallium nitride (GaN) and zinc oxide (ZnO) ever since the 1960s in order to develop optical devices with shorter wavelengths [1]
Summary
LED has attracted many researchers due to its low energy consumption and long lasting operation. It has created trillion dollars business turn over in the last decade for the demand in houses, offices and vehicles. SSLs have attracted huge attention especially from wide band gap semiconductors based emitting devices. Researchers have been studying the physics of II-VI and III-V compound materials such as gallium nitride (GaN) and zinc oxide (ZnO) ever since the 1960s in order to develop optical devices with shorter wavelengths [1]. ZnSe is one of the II-VI compound semiconductors with wide band gap and in the category of direct band gap. Blue light emission is seen when the structure is in forward bias at room temperature
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