Abstract
We performed epitaxial growth of ZnSe single crystals by the temperature difference solution growth method with and without a Zn over pressure and using Se as solvent. In case of undoped epitaxy the surface morphologies as well as the cathodoluminescence (CL) spectra depend greatly on the growth temperature which was variant between 650–950°C. Uniform surface morphologies were obtained at a growth temperature of 950°C. On the other hand, the intensity of the CL spectra increases at lower growth temperature. By controlling the Zn vapor over pressure at a certain optimum value above the Se solution, the intensity of the exciton emission was found to increase even at a high growth temperature. Also, all of the epitaxial crystals grown under applied Zn vapor pressure with doped impurities, Na and Li, showed p-type conductivity.
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