ZnS/ZnSe/GaAs heterostructures grown by metal-organic vapour phase epitaxy

Abstract

In this work we report the metalorganic vapour phase epitaxial growth and characterization of ZnS/ZnSe multilayer structures on GaAs substrates. High electron mobilities and low background doping concentrations (μ300K = 370 cm2 V−1 s−1, n300K = 7 × 1014 cm−3), sharp excitonic photoluminescence features and negligible deep centre emissions demonstrate the quality of the layers. However, it is shown that out-diffusion of gallium and arsenic from the substrate, diffusion of sulphur from the ZnS layers and stacking faults deteriorate the heterointerface quality.