Metalorganic vapor phase epitaxy growth of p-type ZnSSe and its application for blue-green lasers

Abstract

p-Type doping of ZnSSe layers lattice-matched to GaAs substrates are investigated by metalorganic vapor phase epitaxy (MOVPE) growth, where dimethylzinc, dimethylselenide, and diethylsulfide (DES) or dimethylsulfide (DMS) are used as the host sources and dimethylaminolithium as the acceptor dopant. Low-temperature photoluminescence and capacitance measurements show that acceptor impurities, nitrogen and/or lithium, are effectively doped in ZnSSe layers grown by using DMS as the sulfur source, while they are hardly doped in the layers grown by using DES. Stimulated emission in the blue to green spectral region are observed at 77 K from MOVPE-grown structures of separate confinement heterostructure single quantum well (SCH-SQW), ZnSSe/ZnSe/ZnCdSe/ZnSe/ZnSSe/ GaAs, under optical excitation, and evidence of stimulated emission by current injection in a pulsed mode was observed.