MOVPE growth of Al xIn 1− xP using tertiarybutylphosphine in pure N 2 ambient

Abstract

We have investigated metalorganic vapor phase epitaxy (MOVPE) growth of Al x In 1− x P alloy using tertiarybutylphosphine (TBP) as the phosphorus source in pure N 2 ambient. The effect of the substrate temperature on the aluminum composition of Al x In 1− x P epilayers during the MOVPE growth has been studied. When the source flow rates were kept unchanged, the aluminum composition of the Al x In 1− x P epilayer increased monotonically when the substrate temperature, T g, was raised from 580 °C to 660 °C during the growth. It became saturated when T g reached 660 °C and above. The crystalline quality of the grown Al x In 1− x P epilayers has been investigated by X-ray diffraction and photoluminescence measurements. A linear relationship between the aluminum composition of the Al x In 1− x P epilayer and TMAl/(TMAl + TMIn) source flow ratio has been obtained when grown at the optimized growth temperature of T g = 630 °C. It has also been observed that the aluminum incorporation coefficient of Al x In 1− x P epilayers decreased when the V/III source flow ratio was increased during the MOVPE growth.