Abstract
Tertiarybutylphosphine (TBP) and bisphosphinoethane (BPE) have been studied as alternatives to phosphine (PH 3) in the metalorganic vapor phase epitaxy (MOVPE) growth of Zn-doped p-type AlGaInP layers. Smooth surfaces were obtained for both organometallic phosphorus sources even for extremely low V/III ratios of 2 for BPE and 4 for TBP, compared with 35 for PH 3 at a growth temperature of 710°C. These results indicate that both TBP and BPE have a high decomposition rate. The layer grown with TBP at 710°C with a V/III ratio as low as 75 exhibits strong photoluminescence intensity and a high electrical activity of Zn which are comparable to those obtained for the layers grown with PH 3.
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