Abstract
Heterojunction diodes consisting of n-type vertically aligned ZnO nanowire core by hydrothermal growth and p-type ZnTe film shell by magnetron sputtering were prepared on fluorine-doped tin oxide (FTO) glass substrates. The diodes were characterized by scanning electron microscope, transmission electron microscope, X-ray diffraction pattern, and UV-vis absorption spectra. Diode rectifying behavior was observed in the current-voltage characteristics. The enhanced photocurrent under illumination suggests the efficicent separation of photogenerated carrier within the heterojunction. The results indicate that the ZnO/ZnTe core/shell structures can be made into useful photovoltaic devices.
Published Version
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