ZnMgO‐ZnO quantum wells embedded in ZnO nanopillars: Towards realisation of nano‐LEDs

Abstract

AbstractZnO thin films, ZnMgO/ZnO heterostructures and ZnO nanostructures were fabricated using molecular beam epitaxy (MBE), vapour phase transport (VPT) and an aqueous chemical growth approach (ACG). The possibility to employ several fabrication techniques is of special importance for the realization of unique device structures. MBE was implemented for ZnO‐based layer and heterostructure growth. Pronounced RHEED oscillations were used for growth control and optimisation, resulting in high quality ZnO and Zn1–xMgxO epilayers and heterostructures, as well as ZnMgO/ZnO quantum wells on sapphire and SiC substrates. A novel advanced VPT approach is developed and sapphire, SiC, ZnO epitaxial layers, and even plastic and glass were implemented as substrates for ZnO growth. The VPT fabrication of ZnO nanopillars, leading to well aligned, c‐axis oriented nanopillars with excellent quality and purity is demonstrated. Successful steps were made towards device fabrication on ZnO basis. The nanopillar fabrication technique is combined with MBE technology: MBE‐grown ZnMgO/ZnO quantum well structures were grown on ZnO nanopillars presenting significant progress towards nano‐LEDs realization. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)