Low energy (100 eV) C+ ion doping into GaAs using combined ion beam and molecular beam epitaxial technology

Abstract

Low-energy (100 eV) carbon ion (C+) irradiation during molecular beam epitaxy of GaAs was carried out using combined ion beam and molecular beam epitaxy (CIBMBE) technology for the growth temperature (Tg) range between 500 and 590 °C. Carbon incorporation was identified by both low-temperature (2 K) photoluminescence and Hall effect measurements. In the PL spectra, two well-established specific emissions, ‘‘g’’ and [g-g], which are closely related to acceptor impurities, were observed for the above Tg range. The results indicate that carbon was both optically and electrically well activated as an acceptor even at Tg as low as 500 °C. Maximum net hole concentration, ‖NA-ND‖, as high as 3×1018 cm−3 was obtained with no appreciable radiation damages and undesired impurity contamination.