Abstract
The addition of surfactants during organometallic vapor phase epitaxy (OMVPE) growth is a novel approach to controlling the surface processes and materials properties of the resultant epitaxial layers. The present work elucidates the effects of the surfactants Sb and Bi on dopant incorporation in GaP and GaInP. The effects of Sb and Bi surfactants are dramatic. The surfactants significantly increase the incorporation of the acceptor Zn in both GaP and GaInP. Also, increased H concentrations are observed. A simple mechanism is proposed to explain both the increase in Zn and H. These results suggest a simple and effective method for controlling the incorporation of dopants by adding a minute amount of surfactant during OMVPE growth.
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