Zn distribution and location, luminescence measurement after Zn channeled implantation in GaN and RTA annealing

Abstract

Both 140 keV Zn channeled implantation in the 〈0 0 0 1〉 direction of GaN and random implantation were performed at room temperature and in a dose range from 1×10 13 to 4×10 16 cm −2. After rapid thermal annealing at 1100°C for 30 s in flowing N 2, the distributions of Zn are monitored by SIMS and the dip curves measured by channeling particle-induced X-ray emission show that Zn atoms locate closely in the positions of Ga in GaN. Photoluminescence measurements reveal that blue luminescence intensity related with Zn dose. The relative intensity of blue to yellow after channeled implantation and annealing is greater than that after random implantation and annealing at the same dose.