Abstract
The formation of a thin layer of hexagonal Y Si 2− x phase on a single-crystal Si(111) substrate by implantation of 195 keV Y ions with a dose of 5×10 16Y +/cm 2 at room temperature (RT) is investigated. The structural characterization of the as-implanted and annealed samples is performed using Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The results show that the orientation relationship between the Y Si 2− x layer and Si substrate is Y Si 2− x (0 0 0 1)//Si(111) and Y Si 2− x [1 1 -2 0]//Si [110].
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