Abstract
The processes in the synthesis of a thin layer of hexagonal YSi 2-x phase on a single-crystal Si (111) substrate by implantation of 195 keV Y ions with a dose of 2 × 1017 Y +/ cm 2 at 300°C followed by annealing in an N2 atmosphere at different temperatures for 1 h are investigated. The characterization of the as-implanted and annealed samples is performed using Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD) pole figures. Scanning electron microscopy (SEM) was used to view the surface topography. The results show that the orientation relationship between the YSi 2-x layer and Si substrate is YSi 2-x(0001)// Si (111) and YSi 2-x[11–20]// Si [110].
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
