Abstract
A buried layer of iron disilicide was synthesized by ion implantation in (1 1 1) Si p-type maintained at 500 °C using 195 keV Fe ions with a dose of 2 × 10 17 at./cm 2, followed by annealing in a N 2 atmosphere at 850 °C for 90 min. The investigation of the phase composition is carried out by Rutherford backscattering spectrometry (RBS), whereas the structural characterization is obtained by means of both X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The precipitates favor epitaxial growth with respect to (1 1 1) Si planes with epitaxial relationships (2 2 0) β-FeSi 2∥(1 1 1) Si and/or (2 0 2) β-FeSi 2∥(1 1 1) Si. A mixture of β-FeSi 2 and α-FeSi 2 silicides is observed in the as-implanted state. After annealing of the samples at 1000 °C, the XRD pole figures show the transition from β-phase to α-phase.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
