Abstract
A buried layer of iron disilicide was synthesized by ion implantation in (1 1 1) Si p-type maintained at 500 °C using 195 keV Fe ions with a dose of 2 × 10 17 at./cm 2, followed by annealing in a N 2 atmosphere at 850 °C for 90 min. The investigation of the phase composition is carried out by Rutherford backscattering spectrometry (RBS), whereas the structural characterization is obtained by means of both X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The precipitates favor epitaxial growth with respect to (1 1 1) Si planes with epitaxial relationships (2 2 0) β-FeSi 2∥(1 1 1) Si and/or (2 0 2) β-FeSi 2∥(1 1 1) Si. A mixture of β-FeSi 2 and α-FeSi 2 silicides is observed in the as-implanted state. After annealing of the samples at 1000 °C, the XRD pole figures show the transition from β-phase to α-phase.
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