Abstract
A new technique for the measurement of the drift mobility of minority carriers in germanium is described. The emitter and collector contacts of a conventional drift mobility specimen are replaced by a light spot and a section of suitable waveguide respectively. Detection of minority carriers at the waveguide relies on the increased microwave absorption due to the added carriers. The technique may be applied successfully under conditions which preclude the adoption of the conventional method. In particular the technique may be used at high electric fields when the carrier drift velocity is no longer proportional to the applied field and when the minority carrier lifetime is very small. The former feature has been exploited in the present work. The latter feature suggests that, the technique may be applicable to Group III—Group V compounds and other semiconductors
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