Abstract
An electronic method to measure the drift velocity and mobility of charge carriers in polymer thin film transistor has been developed. The measurement is based on the movement of a packet of carriers injected into the channel. This technique can be used to explore trap states and therefore obtain a comprehensive understanding of charge transport in these materials. Drift mobility of 0.52cm2∕Vs is obtained from the transit time which is a factor of 3 higher than the field-effect transistor mobility.
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