Abstract
Grazing-incidence x-ray reflectivity has been exploited to study as-grown SiO 2 thin films deposited on Si(100) substrates by radio-frequency (r.f.) magnetron sputtering under various substrate temperatures and gas flow conditions. Results indicate that an increase of substrate temperature from room temperature to 763 K only slightly decreases the surface roughness. Comparatively, the surface morphology is strongly controlled by the gas flow conditions during deposition. The surface roughness increases almost linearly from 0.51 to 2.38 nm as the argon gas flow is increased from 8 to 50 sccm. The chemical state and composition of the films were analysed by XPS.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call