Abstract
Surface modifications of silicon induced by electron cyclotron resonance (ECR) etching with CF4 is studied using x-ray photoemission spectroscopy and Raman scattering techniques. It is shown that a silicon sample etched by ECR exhibits a thinner surface residual layer compared to those exposed to reactive ion etching (RIE) or hybrid ECR/RIE. Evidence of plasma-induced structural disorder in the silicon surface was only observed in the RIE-etched sample.
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