Abstract
High rate plasma etch processes for InP with smooth etched surfaces and highly anisotropic sidewall profiles were developed. A CH4:H2-based process using an electron cyclotron resonance (ECR) etcher and a reactive ion etcher (RIE) was investigated. Etch rates in excess of 120 nm/min in an ECR etcher using CH4:H2:Ar plasma and 135 nm/min in a RIE using CH4:H2:O2 were achieved in InP and produced minimal surface roughness. These etch rates are significantly faster than those previously reported.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
