Abstract
Ordered structure in GaInP alloys grown on (001) GaAs substrates by low-pressure metalorganic vapor phase epitaxy has been investigated by means of x-ray diffraction and transmission electron microscopy. We found a broad peak of CuPt I type (111)B ordering in the x-ray measurements. X-ray results gave the total amount of ordered region and the average size of each ordered domain. Room-temperature photoluminescence peak energy anomalies were found to be related to the amount of the order phase.
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