Abstract
We have studied the growth of AlGaAs on V-grooved GaAs substrates by low-pressure (100 Torr) metalorganic vapor phase epitaxy (MOVPE) in the temperature range of 600 to 700°C. The growth temperature dependence of facet formation, the facet dependence of AlGaAs composition on the V-grooves, and the growth temperature dependence of spontaneous vertical quantum well (SVQW) widths have been investigated by low temperature photoluminescence (PL), transmission electron micrograph (TEM) and spectrally and spatially resolved low temperature cathodoluminescence (CL). The width of the SVQW varies from 140 to 250 Å with increasing the growth temperature from 600 to 700°C.
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