Composition profile of an AlGaAs epilayer on a V-grooved substrate grown by low-pressure metalorganic vapor phase epitaxy

Abstract

A composition distribution of an AlxGa1−xAs epilayer on a V-grooved substrate grown by low-pressure metalorganic vapor phase epitaxy is described. The aluminum (Al) content of an AlxGa1−xAs epilayer on a V-grooved substrate is found to be on the order of x(111)A≳xtop(100)≳xedge-facet ≳xbottom-intersection by using spectrally and spatially resolved low temperature cathodoluminescence (CL) measurements. The composition difference between (111)A surfaces and bottom intersections is as much as 30%. The resulting spontaneous vertical quantum wells and spontaneous waveguides in the bottom intersections are expected to be applicable in low-threshold current laser devices.